NOTICE OF INTENT TO SOLE SOURCE: RIE05-Electrical Static Chuck Based Deep Reactive Ion Etching System
Closed Special Notice Posted
This opportunity was awarded. See its 2 award notices in the notice history.
- Solicitation number
- NB680000-23-00600
- Agency
- National Institute of Standards and Technology Department of Commerce
- Responses due
- Set-aside
- No set-aside
Opportunity facts
- NAICS code
- 333242 Semiconductor Machinery Manufacturing
- PSC
- 6640 Laboratory Equipment And Supplies
- Place of performance
- Gaithersburg, Maryland 20899, United States
Notice details come from SAM.gov. Updated .
About this opportunity
This Special Notice from the Department of Commerce National Institute of Standards and Technology announces their intent to negotiate a sole source contract with SPTS Technologies Inc. for the purchase of an Electrical Static Chuck Based Deep Reactive Ion Etching System and associated five year service contract to replace aging equipment.
The Special Notice seeks to replace an existing ESC based DRIE system used by the NanoFab User Facility that is nearing end of life. To minimize downtime and require no retraining of staff and users, the replacement system must utilize the same Bosch silicon etch processes and be operated similarly to the current system. Interested parties have until February 16, 2023 to identify in writing their ability to meet the requirements of providing a commercially available ESC based DRIE system with the specified minimum capabilities. Only SPTS Technologies Inc. was determined able to meet the requirements under the NAICS code 333242 for semiconductor machinery manufacturing with a small business size standard of 1,500 employees.
Notice text
The United States Department of Commerce (DOC), National Institute of Standards and Technology (NIST), Acquisition Management Division (AMD) intends to negotiate, on a sole source basis, with SPTS Technologies Inc. of 2381 Bering Drive, San Jose, California 95131 for the purchase of the following system. The statutory authority for this acquisition is 41 USC 3304(a)(1), as implemented under the authority of 41 U.S.C. 1901.
1 QTY, RIE05-Electrical Static Chuck Based Deep Reactive Ion Etching System.
1 QTY, RIE05-Electrical Static Chuck Based Deep Reactive Ion Etching System Service Contract. 5 year warranty (one-year base + 1 four-year option)
Based on the Government’s market research, only SPTS Technologies Inc. can provide a commercially available product that meets the following combined minimum specifications:
- The Electrical Static Chuck (ESC) based deep reactive ion etching (DRIE) system uses the Bosch silicon deep etch processes provided with the system with as little as 1.0% silicon exposed area as well as non-Bosch processes and waferless chamber cleaing processes.
- The system includes dual Inductive Couple Plasma (ICP) Radio Frequency (RF) sources and a bias RF source with independent RF control.
The NanoFab User Facility user base is currently trained in the operation of an ESC based DRIE system and is heavily used to fabricate a wide variety of silicon-based devices. However, the current system is approaching the end of life. Software can no longer be upgraded, and some hardware are becoming obsolete. To provide uninterrupted support to NanoFab users and minimize tool down time, the NanoFAb needs a replacement system that can utilize the experience already developed by users on the existing ESC based deep silicon etching system and provide similar results. Changing the etch system would require retraining staff and every user, to include requiring the redevelopment and re-qualification of each process used by each user which would severely impair timely research progress.
SPTS Technology Inc is the sole manufacturer and distributor of the commercial equipment that meets the required minimum specifications.
The North American Industry Classification System (NAICS) code for this acquisition is 333242 – Semiconductor Machinery Manufacturing, with a small business size standard of 1,500employees.
A determination by the Government not to compete the proposed acquisition based upon responses to this notice is solely within the discretion of the Government. Information received will be considered solely for the purpose of determining whether to conduct a competitive procurement.
No solicitation package will be issued. This notice of intent is not a request for quotations; however, all responsible sources interested may identify their interest and capability to respond to this requirement. Interested parties that believe they can satisfy the requirements listed above must identify their capability in writing before the response date of this notice. Only responses received by 1:00 p.m. Mountain Standard Time on February 16, 2023 will be considered by the government. Responses shall be submitted via email to angela.hitt@nist.gov and forest.crumpler@nist.gov.
Contracting Office Address:
100 Bureau Drive
Bldg. 301, Mail Stop 1640
Gaithersburg, Maryland 20899-0001
Notice history
| Notice | Type | Posted |
|---|---|---|
| NOTICE OF INTENT TO SOLE SOURCE: RIE05-Electrical Static Chuck Based Deep Reactive Ion Etching System | Award Notice | |
| HBr-Cl-based ICP Silicon Etch System and DRIE-based ICP Silicon Etch System | Limited / Sole Source Justification | |
| HBr-Cl-based ICP Silicon Etch System and DRIE-based ICP Silicon Etch System | Award Notice | |
| NOTICE OF INTENT TO SOLE SOURCE: RIE05-Electrical Static Chuck Based Deep Reactive Ion Etching System | Special Notice | |
| NOTICE OF INTENT TO SOLE SOURCE: Plasma-Therm LLC HBr-Cl-based ICP Silicon Etch System and DRIE-based ICP Silicon Etch System | Special Notice | |
| Inductively Coupled Plasma Reactive Ion Etcher for Etching Silicon with Hydrogen Bromide and Chlorine | Pre-Solicitation |
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