Inductively Coupled Plasma Reactive Ion Etcher for Etching Silicon with Hydrogen Bromide and Chlorine

This sources sought notice from the National Institute of Standards and Technology seeks potential sources for an inductively coupled plasma reactive ion etcher capable of etching silicon with hydrogen bromide and chlorine gases. Key requirements for the equipment include a load-lock, process chamber compatible with reactive chemicals, ICP and RIE electrodes, pumping system, software, safety interlocks, and compatibility with 200mm and 300mm wafer sizes and carriers. Responses were required to include company and contact details, equipment specifications, manufacturing capabilities, customization options, terms and conditions, pricing, and references. Responses were due by October 31, 2022 and will be considered for a potential future solicitation.

There is no set-aside designation specified. The primary NAICS code would likely be 333298 for All Other Industrial Machinery Manufacturing and PSC code is likely Q2X for Equipment, Instruments, Supplies, and Services for Research and Development. As this is a sources sought notice, no current contractors or budget range is provided. The notice seeks key details about a supplier's ability to etch silicon using hydrogen bromide and chlorine gases.