NOTICE OF INTENT TO SOLE SOURCE: Plasma-Therm LLC HBr-Cl-based ICP Silicon Etch System and DRIE-based ICP Silicon Etch System
Closed Special Notice Posted
This opportunity was awarded. See its 2 award notices in the notice history.
- Solicitation number
- NB680000-23-00677
- Agency
-
National Institute of Standards and Technology
Department of Commerce
- Responses due
- Set-aside
- No set-aside
Opportunity facts
- NAICS code
- 333242 Semiconductor Machinery Manufacturing
- Place of performance
- Gaithersburg, Maryland 20899, United States
Notice details come from SAM.gov. Updated .
About this opportunity
This Special Notice was published by the United States Department of Commerce National Institute of Standards and Technology to sole source the purchase of two plasma-therm etch systems from Plasma-Therm, LLC. The systems required are a HBr-Cl-based ICP silicon etch system and a DRIE-based ICP silicon etch system, each with a five year warranty. The purpose of this Special Notice is to acquire these two etch systems to meet NIST's specifications for substrate temperature control, sample loading and transfer capabilities, and to maintain continuity of operation for their NanoFab User Facility. Interested parties must demonstrate their ability to meet requirements in writing by February 15, 2023. Only Plasma-Therm, LLC is identified as able to provide equipment meeting the specifications as the sole manufacturer.
The National Institute of Standards and Technology intends to negotiate on a sole source basis with Plasma-Therm, LLC for the purchase of two plasma etch systems to support their NanoFab User Facility. The systems are required to have specific capabilities for substrate temperature control and sample handling. Interested parties must respond in writing by February 15, 2023 to be considered, however only Plasma-Therm, LLC is identified as able to meet requirements as the sole manufacturer of equipment meeting the agency's specifications.
Notice text
The United States Department of Commerce (DOC), National Institute of Standards and Technology (NIST), Acquisition Management Division (AMD) intends to negotiate, on a sole source basis, with PlasmaTherm, LLC of 10050 16th ST N, Saint Petersburg, FL 33716-4219 for the purchase of the following systems. The statutory authority for this acquisition is 41 USC 3304(a)(1), as implemented under the authority of 41 U.S.C. 1901.
1 QTY, PlasmaTherm HBr-Cl-based ICP Silicon Etch System. 5 year warranty (one-year base + 1 four-year option)
1 QTY, PlasmaTherm HBr-Cl-based ICP Silicon Etch System. 5 year warranty (one-year base + 1 four-year option)
Based on the Government’s market research, only Plasma-Therm can provide a commercially available product that meets the following combined minimum specifications:
- Substrate electrode temperature shall be variable from minus 20 degrees Celsius to plus 100 degrees Celsius or broader.
- The sample loading system shall have the ability to transfer a metal carrier plate with the sample and a propriate clamp with backside helium cooling into the process chamber.
The NanoFab User Facility user base is currently trained in the operation of the Plasma-Therm ICP etching system. The user interface, software, hardware design, gas flow system, and vacuum system, will be similar on Plasma-Therm’s new Corial 210IL ICP etching system, so users will have an almost seamless transition between using the two etch systems. Changing the etch system would require retraining staff and every user, to include requiring the re-qualification of each process used by each user which would severely impair timely research progress.
Plasma-Therm, LLC is the sole manufacturer and distributor of the commercial equipment that meets the required minimum specifications.
The North American Industry Classification System (NAICS) code for this acquisition is 333242 – Semiconductor Machinery Manufacturing, with a small business size standard of 1,000 employees.
A determination by the Government not to compete the proposed acquisition based upon responses to this notice is solely within the discretion of the Government. Information received will be considered solely for the purpose of determining whether to conduct a competitive procurement.
No solicitation package will be issued. This notice of intent is not a request for quotations; however, all responsible sources interested may identify their interest and capability to respond to this requirement. Interested parties that believe they can satisfy the requirements listed above must identify their capability in writing before the response date of this notice. Only responses received by 10:00 a.m. Eastern Standard Time on February 15, 2023 will be considered by the government. Responses shall be submitted via email to ian.robinson@nist.gov and angela.hitt@nist.gov.
Contracting Office Address:
100 Bureau Drive
Bldg. 301, Mail Stop 1640
Gaithersburg, Maryland 20899-0001
Notice history
| Notice | Type | Posted |
|---|---|---|
| NOTICE OF INTENT TO SOLE SOURCE: RIE05-Electrical Static Chuck Based Deep Reactive Ion Etching System | Award Notice | |
| HBr-Cl-based ICP Silicon Etch System and DRIE-based ICP Silicon Etch System | Limited / Sole Source Justification | |
| HBr-Cl-based ICP Silicon Etch System and DRIE-based ICP Silicon Etch System | Award Notice | |
| NOTICE OF INTENT TO SOLE SOURCE: RIE05-Electrical Static Chuck Based Deep Reactive Ion Etching System | Special Notice | |
| This notice | Special Notice | |
| Inductively Coupled Plasma Reactive Ion Etcher for Etching Silicon with Hydrogen Bromide and Chlorine | Pre-Solicitation |
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