HBr-Cl-based ICP Silicon Etch System and DRIE-based ICP Silicon Etch System
Awarded Limited / Sole Source Justification Posted
This opportunity was awarded. See its 2 award notices in the notice history.
- Solicitation number
- NB680000-23-00677
- Agency
- National Institute of Standards and Technology Department of Commerce
- Set-aside
- No set-aside
Opportunity facts
- Contract number
- 1333ND23PNB680350 Federal contract award
- NAICS code
- 333242 Semiconductor Machinery Manufacturing
- Place of performance
- Gaithersburg, Maryland 20899, United States
Notice details come from SAM.gov. Updated .
About this opportunity
This Limited/Sole Source Justification Notice from the National Institute of Standards and Technology seeks to procure two inductively coupled plasma etch systems, one for HBr Cl-based silicon etching and one for silicon deep reactive ion etching with four-year warranties, from an unknown vendor for an unknown value awarded on August 9, 2023. According to the justification, market research including a sources sought notice on SAM.gov receiving two responses and a search by the Manufacturing Extension Partnership found that only Oxford Instruments America and Plasma-Therm could meet the specifications to provide the specialized etching systems. The Contracting Officer will determine if awarded prices are fair and reasonable.
Notice text
Justification attached per FAR 6.305
Awarded contract 1333ND23PNB680350 to unknown vendor for unknown amount on 2023-08-09.
Attachments
| File | Type | Posted |
|---|---|---|
| JOFOC 23-00677_Redacted.pdf |
Notice history
| Notice | Type | Posted |
|---|---|---|
| NOTICE OF INTENT TO SOLE SOURCE: RIE05-Electrical Static Chuck Based Deep Reactive Ion Etching System | Award Notice | |
| HBr-Cl-based ICP Silicon Etch System and DRIE-based ICP Silicon Etch System | Limited / Sole Source Justification | |
| HBr-Cl-based ICP Silicon Etch System and DRIE-based ICP Silicon Etch System | Award Notice | |
| NOTICE OF INTENT TO SOLE SOURCE: RIE05-Electrical Static Chuck Based Deep Reactive Ion Etching System | Special Notice | |
| NOTICE OF INTENT TO SOLE SOURCE: Plasma-Therm LLC HBr-Cl-based ICP Silicon Etch System and DRIE-based ICP Silicon Etch System | Special Notice | |
| Inductively Coupled Plasma Reactive Ion Etcher for Etching Silicon with Hydrogen Bromide and Chlorine | Pre-Solicitation |
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