HBr-Cl-based ICP Silicon Etch System and DRIE-based ICP Silicon Etch System

Awarded Limited / Sole Source Justification Posted

See its 2 award notices in the notice history.

Solicitation number
NB680000-23-00677
Agency
Set-aside
No set-aside

Opportunity facts

Contract number
1333ND23PNB680350 Federal contract award
Place of performance
Gaithersburg, Maryland 20899, United States

Notice details come from SAM.gov. Updated .

About this opportunity

This Limited/Sole Source Justification Notice from the National Institute of Standards and Technology seeks to procure two inductively coupled plasma etch systems, one for HBr Cl-based silicon etching and one for silicon deep reactive ion etching with four-year warranties, from an unknown vendor for an unknown value awarded on August 9, 2023. According to the justification, market research including a sources sought notice on SAM.gov receiving two responses and a search by the Manufacturing Extension Partnership found that only Oxford Instruments America and Plasma-Therm could meet the specifications to provide the specialized etching systems. The Contracting Officer will determine if awarded prices are fair and reasonable.

Notice text

Justification attached per FAR 6.305

Awarded contract 1333ND23PNB680350 to unknown vendor for unknown amount on 2023-08-09.

Files

File Type Posted
JOFOC 23-00677_Redacted.pdf PDF

Notice history

On GovTribe

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