Statement of Work_9.18.25.pdf

Argonne National Laboratory

Statement of work/Technical Specs for Sputtering Tool

ANL Point of Contact:

Suzanne Miller, Tech Rep csmiller@anl.gov

1. Introduction and Background:

The Center for Nanoscale Materials is seeking to purchase a sputtering system handling multiple substrates sizes from 150mm to wafer pieces for support of our users and staff scientists.

2. Scope of Work/Technical Specifications:

The Sputtering system must be capable of processing pieces up to a 150mm wafer.

Utilities and Physical Size

208V 3Phase

Compressed air +≤100 psi

N2 ≤ 100 psi

Length ≤ 8 ft

Width ≤ 4ft

Height: must fit through a 8ft door, overall height less than 10ft (if taller than 8 ft it must be able to be disassembled)

System Frame and Enclosure

• Access to the cabinet is provided through removable and/or swing out panels. The cabinet doors must open from the side and not the top.

Vacuum Chamber

• Hinged chamber front door for easy internal access (required for easy cleaning and maintenance)

• Large, shuttered viewport offset to reduce material deposition

• Two sets of removable stainless steel debris shield

• Pressure relief to be provided to keep the chamber below the maximum allowable working pressure for both the load lock and process chamber.

Safety and Certifications

• Field evaluated to meet CSA SPE-1000 certification

• The interlock system is a complete set of hardware interlocks managed with a separate safety circuit on a safety rated relay as well as a set of software interlocks

• Disconnect for Targets. Cord and plug or physical disconnect to allow for complete isolation from power supply during target change outs. This is not an interlock. Cord and plug is preferred.

• A 3-light beacon to provide a visual indicator of system status mailto:csmiller@anl.gov

System Control Software

• PC control station with Windows 11 Enterprise

• Fully automated operation via a single complete recipe that controls pressure, gas flows, deposition source control and fixturing

• Capability to run the system in both auto-sequence mode and manual mode

• user account system with various security and access levels

• Remote connectivity available for training and diagnostic support

Gas Control for Reactive Sputtering

• Voltage-based reactive gas flow control optimizes rate and maintains stoichiometry of reactive sputtering processes (or other method that maintains stoichiometry). It should adjust gas flow to control the stoichiometry of the film by adjusting the voltage as the recipe progresses.

• Allows for user selectable running modes, including full-metal full-poison, as well as any set transitionary point between full-metal and full-poison modes

• Fully integrated and unified operation within deposition software allows for the addition of reactive sputtering recipe steps to a deposition with run-to-run and intermaterial repeatability provided by recipe file generation

• Recipe integration allows for data logging of all process variables inherent to reactive sputtering gas control included in standard deposition data logs

Chamber Pumping and Pressure control.

• 1600 L/s pumping speed range

• 1360 L/s N2 pumping

• High gas throughput and high pumping speed

• CE marked and ROHS compliant

• ISO-F 200 mounting flange with an ISO NW 40 outlet

• Inficon inverted magnetron & Pirani full range vacuum sensor

Combination gauge – atmosphere to UHV pressures

• Base pressure of < 5E-8 Torr in a clean & dry system (options for better base pressure)

1 cfm Dry Vacuum Pumping System

• Air cooled, non-contact, multi-staged roots pump

• High pumping speeds at atmosphere

(3 in) Circular Sputter Source

• Two (2) 3-inch Circular Sputter Sources for non-magnetic materials

• Secure flexible head design

• Threaded target clamp for quick target changes

• Uniform cooling provided by turbulent flow design

• Advanced high strength NdFeB magnet array

• Solid magnet assembly for high material utilization

• Two (2) 3-inch Mag II Circular Sputter Sources for magnetic materials

• Secure flexible head design

• Threaded target clamp for quick target changes

• Uniform cooling provided by turbulent flow design

• Upgraded high strength NdFeB magnet array capable of depositing up to a 0.125 in thick magnetic material

• Solid magnet assembly for high material utilization

Power Supplies

Two Pulsed DC 1 kW Power Supply

• 1.0 kW solid state pulsed DC power supply

• Capable of running in DC or pulsed DC mode

• 0-100 kHz pulse frequency

• 0-800 V | 0-2.5 A

• Low arc energy

• Synchronous pulsing

Two 300 W RF Power Supply and Matching Network

• 13.56 MHz power supply with automatic matching network

Switch for Sputter Power Supplies (4-in-4-out)

• Allows 4 power supplies to be shared between 4 sources (to include co-sputter)

Power supply disconnect

• Power supplies will be disconnected physically when doing target change out. Cord and plug is preferred.

Advanced Downstream Gas Pressure Control

• Recipe-based software-controlled pressure stabilization

• One 100 sccm (Ar) and two 20 sccm mass flow controllers provide precise gas mixing. (N2 and O2)

• Ability to accommodate additional MFCs

• Inficon SKY capacitance diaphragm process gauge (1-100 mTorr)

• VAT throttling valve

Calibration QCM Deposition Rate Sensor

• Sensor is mounted to a rigid bracket to prevent loss of calibration if accidentally moved

• Sensor is water cooled to improve reading accuracy

• Sensor rotates into place under the substrate stage for source calibration, rotates out for deposition

Automated Substrate Stage with RF Bias

Rotating Substrate Stage

• Configured for Ø150 mm substrates or smaller pieces

• Ability to use Custom sample holders

• 10-30 rpm continuous rotation capability

Motorized Linear Manipulator

• Allows motorized in-situ change of the height of the substrate

• Substrate Bias

• 150 W RF substrate bias

• Includes RF generator and automatic matching network

• DC substrate bias capable

Backside Substrate Heating

• Temperature control from ambient to 800 °C

• Multi-stage heat shield design for increased efficiency

• PID based temperature control using a non-contact reference thermocouple

Sputter Source Shutter

• Provide 1 set spare shutter for each source

• Automatic process controlled pneumatic shutter

Load Lock with Rough Vacuum Pumping

• Low volume load lock vacuum chamber

• Isolated from the chamber by a pneumatic gate valve, an interlock prevents the valve from closing while the transfer arm is extended

• A linear manual transfer arm allows the substrate to be moved between the process chamber and the load lock easily

Automatic Transfer

• Servo-motor control over motion of transfer arm, substrate height, and substrate rotation

• Transfer arm and gate valve upgraded to versions that enable automatic transfer

• Recipe-driven automatic transfer

Options:

• Ion Source

• Pumping Upgrades

Reference:

Vendor must supply 3 references: These can be a combination of industry and academic. At least 1 needs to be from industry.

Installed User Base: The user must have at least 50 similar systems installed.

3. Installation:

The contractor shall be responsible for installation of the sputtering system. Placement of the equipment at the job site shall be the responsibility of Argonne. Argonne shall be responsible for providing the basic facilities necessary for the contractor to complete the installation.

4. Training The training curriculum shall cover at a minimum: operation of all hardware and software components; faults and alarms; and routine maintenance procedures to be performed by CNM personnel.

5. Warranty

• Any defects will be repaired or replaced at no cost including shipping to and from the customer’s site

• Warranty period of 12 months from acceptance at site or 15 months from shipment •. Lifetime telephone and online support is included.