Acceptance Criteria_9.18.2025.pdf
PDF 241 KB Posted
- Attached to
- Sputtering Tool System
- Solicitation number
- 5-S176-Q-00760-00
- Issued by
-
Department of Energy Office of Science
About this file
This document is an Acceptance Criteria document from Argonne National Laboratory for a sputtering tool procurement for the Center for Nanoscale Materials. The laboratory seeks a sputtering system capable of handling multiple substrate sizes from 150mm to wafer pieces, with specific technical requirements for physical chamber performance and deposition capabilities. Key acceptance criteria include achieving a base pressure below 5E-8 Torr, functional interlocks, stage temperature reaching 800°C, target disconnection verification, smooth autoloader operation, and a power supply sharing switch.
The technical specifications detail precise film deposition requirements, including aluminum and silicon dioxide (SiO2) deposition tests. For aluminum deposition, the system must deposit 100 nm on three 150 mm silicon wafers with uniformity within ±3% (10mm edge exclusion). For SiO2 deposition, the system must deposit 50 nm on three 150mm silicon wafers using a reactive process, with uniformity within ±5% (10mm edge exclusion). The document emphasizes voltage-based reactive gas flow control to optimize deposition rate and maintain stoichiometry. The point of contact for this procurement is Suzanne Miller, Tech Rep, who can be reached at csmiller@anl.gov.
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| Statement of Work_9.18.25.pdf | ||
| ANL-70B Reps and Certs Long-14-FEB-2025.PDF |
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Text version
Argonne National Laboratory
Acceptance Criteria for Sputtering Tool
ANL Point of Contact:
Suzanne Miller, Tech Rep csmiller@anl.gov
1. Introduction and Background:
The Center for Nanoscale Materials is seeking to purchase a sputtering system handling multiple substrates sizes from 150mm to wafer pieces for support of our users and staff scientists.
2. Acceptance: Physical Chamber; Confirm and Verify
• Base pressure of < 5E-8 Torr in a clean & dry system (options for better base pressure)
• Interlocks: Confirm and verify all interlocks are working upon installation.
• Stage Temperature reaches 800C
• Disconnect for Targets. Verify disconnect
• Autoloader moves smoothly in and out of the chamber: Test with 25 load and unload using a 6-inch silicon wafer.
• Switch for Sputter Power Supplies: Allows 4 power supplies to be shared between 4 sources (to include co-sputter): Test and confirm switch is working.
3. Acceptance Recipe: Confirm and Verify Gas Control for Reactive Sputtering
• Voltage-based reactive gas flow control optimizes rate and maintains stoichiometry of reactive sputtering processes (or other method that maintains stoichiometry):
• Film Uniformity:
• Al Deposition: 3 – 150 mm silicon wafers
▪ 100 nm Al
▪ Uniformity +/- 3% with 10mm edge exclusion
• SiO2 Deposition (or other dielectric); 3 – 150mm Si wafers
▪ Reactive Process
▪ 50 nm deposition
▪ Uniformity +/- 5% with a 10mm edge exclusion mailto:csmiller@anl.gov
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