Minimum Required Specifications Rev 1.pdf
PDF 120 KB Posted
- Attached to
- Angled Evaporator System
- Solicitation number
- 6-B175-Q-00151-00
- Issued by
-
Department of Energy Office of Science
About this file
This document is a technical specifications file for an angled evaporator system dated February 6, 2026 (Revision 1). The system is intended to support quantum information science and microelectronics research, specifically for fabricating high-performance superconducting qubits, circuits, and Josephson junctions. The angled evaporator must support deposition of aluminum, niobium, and titanium superconducting films with programmable substrate rotation, in-situ oxidation capability, and in-situ ion-milling for interface preparation.
The specifications establish eight minimum technical requirements that suppliers must meet. Key performance parameters include film deposition rate resolution of 0.001 nm/s and thickness resolution of 0.01 nm. The system must feature dual-chamber architecture (load-lock and main chamber) with vacuum levels below 5×10⁻⁸ mbar in the main chamber and below 3×10⁻⁷ mbar in the load-lock, achieving these pressures within 10 minutes of pumping. The substrate heater must reach 750°C for 4-inch substrates. The motorized substrate holder must enable continuous tilting across a 330° range with angular accuracy and reproducibility better than 0.02°. Additional requirements include a residual gas analyzer with detection sensitivity to 5×10⁻¹⁴ Torr, fully automated ozone generation for Josephson junction oxidation across pressures from 5×10⁻³ to 100 mbar, and O₂-assisted argon ion-beam processing with thickness uniformity of ±3% over 3-inch and ±6% over 4-inch substrates.
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Specifications
02/06/2026
Rev 1
The angled evaporator will be dedicated to strongly supporting users and staff scientist research in quantum information science and microelectronics, with a primary focus on fabrication of high-performance superconducting qubits and circuits. The system will enable reproducible Josephson-junction fabrication, ultra-low-loss superconducting thin films, and advanced in-situ processing critical for state-of-the-art quantum devices.
The minimum technical requirements and specifications that suppliers should meet are listed below:
1. The system shall support high-quality superconducting film deposition including Al, Nb and Ti, with 1) finely adjustable and programmable substrate rotation for angled evaporation; 2) high-precision, long-term stable in-situ oxidation capability for reproducible Josephson-junction fabrication; 3) and in-situ ion-milling capability for interface preparation.
2. The system shall provide film deposition rate resolution up to 0.001 nm/s, thickness resolution up to 0.01 nm.
3. The system shall have dual-chamber architecture (load-lock & main chamber) to enable rapid sample exchange while maintaining low outgassing and high-vacuum superconducting film deposition (< 5×10⁻⁸ mbar in chamber, <3×10-7 mbar in load-lock). After 10 minutes of pumping, the chamber and load-lock shall be in the range of <5×10-7 mbar and <1×10-6 mbar pressure, respectively. After 5 minutes of venting, the chamber and load-lock shall be from HV to
Atmospheric pressure.
4. The system shall support in-situ static and dynamic oxidation over a wide pressure range from
5×10⁻³ mbar to 100 mbar to enable high-quality Josephson junction formation. The system shall also provide fully automated Ozone generation capability for fast, clean, and reproducible
Josephson-junction oxidation.
5. The system shall be capable of heating a 4-inch substrate up to 750 °C to enable ultra-low-defect superconducting thin-film growth.
6. The system shall have a motorized substrate holder allowing continuous tilting over a 330° angular range with programmable control; angular accuracy and reproducibility shall be better than 0.02°.
7. The system shall have an ultra-sensitive residual gas analyzer (RGA) with a detection limit down to 5 × 10⁻¹⁴ Torr for real-time monitoring of gas composition and contamination.
8. The system shall have the capability of O₂-assisted Ar ion-beam processing to enable uniform surface etching and cleaning, with thickness uniformity of ±3% over Ø 3″ and ±6% over Ø 4″ substrates.
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