Minimum Required Specifications.pdf.pdf
PDF 120 KB Posted
- Attached to
- Angled Evaporator System
- Solicitation number
- 6-B175-Q-00151-00
- Issued by
-
Department of Energy Office of Science
About this file
This is a specifications document dated 02/05/2026 detailing technical requirements for an angled evaporator system dedicated to quantum information science and microelectronics research, specifically for fabricating high-performance superconducting qubits and circuits.
The system must support deposition of high-quality superconducting films (Al, Nb, Ta, and Ti) with finely adjustable and programmable substrate rotation, high-precision in-situ oxidation for Josephson-junction fabrication, and in-situ ion-milling capability. Required performance specifications include film deposition rate resolution up to 0.001 nm/s and thickness resolution to 0.01 nm. The system shall feature dual-chamber architecture (load-lock and main chamber) maintaining pressures below 5×10⁻⁸ mbar in the main chamber and below 3×10⁻⁷ mbar in the load-lock, with specified pump-down and vent times. Additional requirements include substrate heating capability to 750°C for 4-inch substrates, motorized substrate holder with continuous 330° tilting range and angular accuracy better than 0.02°, ultra-sensitive residual gas analyzer with detection limit of 5×10⁻¹⁴ Torr, in-situ static and dynamic oxidation over 5×10⁻³ to 100 mbar pressure range with fully automated ozone generation, and O₂-assisted Ar ion-beam processing with thickness uniformity of ±3% over 3-inch and ±6% over 4-inch substrates.
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| Addendum 0001 - Updated Specifications.pdf | ||
| Minimum Required Specifications Rev 1.pdf | ||
| Appendix A-71COM-22-OCT-2025.PDF | ||
| SOW.docx | DOCX document | |
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Text version
Specifications
02/05/2026
The angled evaporator will be dedicated to strongly supporting users and staff scientist research in quantum information science and microelectronics, with a primary focus on fabrication of high-performance superconducting qubits and circuits. The system will enable reproducible Josephson-junction fabrication, ultra-low-loss superconducting thin films, and advanced in-situ processing critical for state-of-the-art quantum devices.
The minimum technical requirements and specifications that suppliers should meet are listed below:
1. The system shall support high-quality superconducting film deposition including Al, Nb, Ta and
Ti, with 1) finely adjustable and programmable substrate rotation for angled evaporation; 2) high-precision, long-term stable in-situ oxidation capability for reproducible Josephson-junction fabrication; 3) and in-situ ion-milling capability for interface preparation.
2. The system shall provide film deposition rate resolution up to 0.001 nm/s, thickness resolution up to 0.01 nm.
3. The system shall have dual-chamber architecture (load-lock & main chamber) to enable rapid sample exchange while maintaining low outgassing and high-vacuum superconducting film deposition (< 5×10⁻⁸ mbar in chamber, <3×10-7 mbar in load-lock). After 10 minutes of pumping, the chamber and load-lock shall be in the range of <5×10-7 mbar and <1×10-6 mbar pressure, respectively. After 5 minutes of venting, the chamber and load-lock shall be from HV to
Atmospheric pressure.
4. The system shall support in-situ static and dynamic oxidation over a wide pressure range from
5×10⁻³ mbar to 100 mbar to enable high-quality Josephson junction formation. The system shall also provide fully automated Ozone generation capability for fast, clean, and reproducible
Josephson-junction oxidation.
5. The system shall be capable of heating a 4-inch substrate up to 750 °C to enable ultra-low-defect superconducting thin-film growth.
6. The system shall have a motorized substrate holder allowing continuous tilting over a 330° angular range with programmable control; angular accuracy and reproducibility shall be better than 0.02°.
7. The system shall have an ultra-sensitive residual gas analyzer (RGA) with a detection limit down to 5 × 10⁻¹⁴ Torr for real-time monitoring of gas composition and contamination.
8. The system shall have the capability of O₂-assisted Ar ion-beam processing to enable uniform surface etching and cleaning, with thickness uniformity of ±3% over Ø 3″ and ±6% over Ø 4″ substrates.
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