Materials for Integrated Nano-electronic and Optoelectronic Structures (MINOS)

Closed Solicitation Posted

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Solicitation number
FA865023S5012
Agency
Responses due
Set-aside
No set-aside

Opportunity facts

Place of performance
Wright Patterson AFB, Ohio 45433, United States

Notice details come from SAM.gov. Updated .

Notice text

The objective of this acquisition program is to develop and maintain competencies that enhance optoelectronic, photonic, and quantum materials; wide-bandgap semiconductors; ultra wide-bandgap semiconductors; magnetic, ferroic materials; digital & analog switching materials; as well as hybrid systems and electronic materials integration to enable next-generation effective and novel Intelligence, Surveillance, and Reconnaissance (ISR) and Electronic Warfare (EW) systems for DAF applications. 

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