Silicon and Silicon/Germanium Epitaxial Wafers

The National Institute of Standards and Technology seeks silicon and silicon/germanium epitaxial wafers under a Request for Quotations, with proposals due May 12, 2026, by 1:00 PM ET. This is a total small business set-aside with a size standard of 1,250 employees.

Delivery is required within 20 weeks of award to NIST in Gaithersburg, Maryland. The procurement includes two mandatory line items (0001 and 0002) requesting 15 "Thin" wafers each with specified silicon and SiGe layer specifications on 100 mm double-side polished silicon substrates, and five optional line items (0003–0007) with minimum quantities of 10 wafers each covering thin doped silicon, thick doped silicon, isotopically enriched 28Si, thin Si/SiGe multilayers (up to 50 layers, maximum 250 nm thickness), and thick SiGe on buffered silicon with anticipated 10 micrometer SiGe layer thickness.

The government does not specify production method; any method—Chemical Vapor Deposition, Molecular Beam Epitaxy, or combinations thereof—is acceptable if wafers meet all specifications including thickness, composition, and coherency. For SiGe films, composition tolerance is 5 atomic percent (e.g., Si₀.₇₀Ge₀.₃₀ allows Si₀.₇₀±₀.₀₅Ge₀.₃₀±₀.₀₅). NAICS code is 334413, Semiconductor and Related Device Manufacturing. Performance testing includes X-ray reflectivity, high-resolution X-ray diffraction, Secondary Ion Mass Spectroscopy, and Spreading Resistance Profiling. Award will be made to the lowest-priced, technically acceptable quotation. Quoters must provide technical acceptability documentation, firm-fixed pricing, active SAM.gov registration, and manufacturer location. Invoices must be submitted electronically to INVOICE@NIST.GOV or through the Invoice Processing Platform.