4H-SiC Silicon Carbide (SiC) Integrated Circuit Processing on 100 mm Diameter SiC Wafers
Closed Solicitation Posted
This opportunity was awarded. See the award notice from .
- Solicitation number
- 80GRC025R7016_RFP
- Agency
- Glenn Research Center National Aeronautics and Space Administration
- Responses due
- Set-aside
- No set-aside
Opportunity facts
- NAICS code
- 541715 Research and Development in the Physical, Engineering, and Life Sciences (except Nanotechnology and Biotechnology)
- Place of performance
- United States
- Points of contact
-
- Claude David claude.e.david@nasa.gov (216) 433-2531
- Eric Hartman eric.t.hartman@nasa.gov (216) 433-2540
Notice details come from SAM.gov. Updated .
About this opportunity
NASA Glenn Research Center has issued a Request for Proposal for the fabrication of 4H-SiC Silicon Carbide integrated circuit processing on 100 mm diameter SiC wafers under solicitation 80GRC025R7016. The procurement seeks a contractor to develop integrated silicon carbide device structures, specifically junction field effect transistors (JFETs) and resistors, using NASA-supplied 100 mm 4H-SiC wafers and following a specified "Gen. 12b" process flow with NASA-provided design files. This full and open competition falls under NAICS code 541715 with a small business size standard of 1,000 employees and will result in a firm-fixed price contract. NASA will evaluate proposals based on technical capability, past performance/experience, and price, with technical factors weighted more heavily than price considerations. Questions regarding the solicitation must be submitted in writing to Contract Specialist Claude David at claude.e.david@nasa.gov by July 11, 2025 at 5:00 PM ET, with final proposals due July 28, 2025 at 5:00 PM ET.
This procurement does not utilize any set-aside designation and is open to all qualified contractors who are registered in the System for Award Management (SAM). No current incumbents or contractors are identified in the solicitation documents, and no specific award values or budget ranges are disclosed. The technical work involves 23 major processing steps including photolithography, ion implantation, metal deposition, etching, and dielectric film layers, with the contractor required to provide comprehensive documentation after each step. The anticipated period of performance is five months from contract award, with deliverables including processed wafers within two weeks of completion and a final technical report within one month of project completion. The place of performance is within the United States, though specific geographic locations are not specified in the solicitation.
Notice text
You are invited to submit a proposal in response to the National Aeronautics and Space Administration (NASA) Glenn Research Center’s Fabrication of 4H-SiC Silicon Carbide (SiC) Integrated Circuit Processing on 100 mm Diameter SiC Wafers solicitation. The principal purpose of this requirement is to provide an integrated silicon carbide (SiC) device structures, specifically JFETs and resistors, on NASA-supplied 100 mm 4H-SiC wafers, following the “Gen. 12b” process flow and using NASA-provided design files.
NASA will conduct this acquisition as a full and open competition. The North American Industry Classification System (NAICS) code for this acquisition is 541715, with a small business size standard of 1,000 employees.
This competitive acquisition will result in a firm-fixed price (FFP) contract. The anticipated period of performance (PoP) for this effort is award plus 5-months.
In accordance with FAR provision 52.204-7, potential offerors intending to submit proposals must be registered in the System for Award Management (SAM) at https://www.sam.gov/SAM/.
Enclosed is the Request for Proposal (RFP) for the subject procurement. Please carefully review Sections L – “INSTRUCTIONS, CONDITIONS, AND NOTICES TO OFFERORS” and Section M – “EVALUATION FACTORS FOR AWARD,” which describes the process for contractor evaluation and selection. Offerors are encouraged to refer to Federal Acquisition Regulation (FAR) provision 52.215-1, INSTRUCTIONS TO OFFERORS–COMPETITIVE ACQUISITION, in particular paragraph (f)(4) which discusses the Government’s right to award a contract without discussions.
To control and protect sensitive data owned by the Government and its Contractors, NASA policy requires all acquisition-related documents be released in Adobe Portable Document Format (PDF).
Documents related to this acquisition, including this letter, the solicitation, attachments, exhibits, any amendments, and links to online reference/technical/bidders library will be attainable electronically from the World Wide Web through the Government-wide point of entry website at www.SAM.gov. Potential Offerors are requested to periodically monitor the websites for updates.
NASA FAR Supplement (NFS) clause 1852.215-84, Ombudsman, is applicable. The Center Ombudsman for this acquisition can be found at https://www.hq.nasa.gov/office/procurement/regs/Procurement-Ombuds-Comp-Advocate-Listing.pdf
This RFP does not commit NASA GRC to pay any proposal preparation costs, nor does it obligate NASA GRC to procure or contract for these services. This request is not an authorization to proceed and does not authorize payment for any charges incurred by the offeror for performing any of the work called for in this solicitation.
Proposals submitted in response to this solicitation shall be due no later than July 25th, 2025 @ 5pm ET.
All questions regarding this RFP should be submitted in writing, electronically to Claude David, Contract Specialist, at claude.e.david@nasa.gov on or beforeJuly 11th, 2025 @ 5pm ET. Offerors are encouraged to submit questions as soon as possible for consideration.
Thank you for your support. We look forward to receiving your proposals.
Attachments
| File | Type | Posted |
|---|---|---|
| 80GRC025R7016_RFP_Final.pdf | ||
| Attachment A - 4H-SiC Silicon Carbide (SiC) Integrated Circuit Processing On 100 mm Diameter SiC Wafers.pdf | ||
| Attachment B - Fixed Price Template_For RFP.xlsx | XLSX spreadsheet |
Notice history
| Notice | Type | Posted |
|---|---|---|
| 4H-SiC Silicon Carbide (SiC) Integrated Circuit Processing on 100 mm Diameter SiC Wafers | Award Notice | |
| 4H-SiC Silicon Carbide (SiC) Integrated Circuit Processing on 100 mm Diameter SiC Wafers | Solicitation | |
| BACK-END-OF-LINE (BEOL) 4H-SiC Silicon Carbide (SiC) Integrated Circuit Processing on 100 mm Diameter SiC Wafers | Pre-Solicitation | |
| 4H-SiC Silicon Carbide (SiC) Integrated Circuit Processing on 100 mm Diameter SiC Wafers | Pre-Solicitation |
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