4H-SiC Silicon Carbide (SiC) Integrated Circuit Processing on 100 mm Diameter SiC Wafers
Awarded Award Notice Posted
- Solicitation number
- 80GRC025C0005
- Agency
- Glenn Research Center National Aeronautics and Space Administration
- Awarded
- to General Electric Company
- Set-aside
- No set-aside
Opportunity facts
- Contract number
- 80GRC025C0005 Federal contract award
- NAICS code
- 541715 Research and Development in the Physical, Engineering, and Life Sciences (except Nanotechnology and Biotechnology)
- Place of performance
- Niskayuna, New York 12309, United States
- Points of contact
-
- Brianna Lindsey brianna.lindsey@nasa.gov (216) 433-5675
- Claude David claude.e.david@nasa.gov (216) 433-2531
Notice details come from SAM.gov. Updated .
About this opportunity
NASA's Glenn Research Center awarded contract 80GRC025C0005 to General Electric Company on September 18, 2025, for $340,317 to provide 4H-SiC Silicon Carbide (SiC) integrated circuit processing services on 100mm diameter SiC wafers. The contract specifically involves the fabrication of SiC JFET-R (Junction Field-Effect Transistor) devices, building on GE Aerospace's previous experience with similar NASA SiC device development and fabrication contracts. NASA received only one proposal in response to the solicitation issued on June 27, 2025, but determined that adequate competition existed and the proposal met all technical requirements with acceptable past performance ratings. The procurement process concluded with GE Aerospace being selected to perform the specialized semiconductor fabrication work for NASA's advanced materials research applications.
Notice text
See the attached Source Selection Statement
Awarded contract 80GRC025C0005 to General Electric Company for 340317.00 on 2025-09-18.
Attachments
| File | Type | Posted |
|---|---|---|
| Source Selection Statement Receipt of One Proposal under Full and Open Competition for 80GRC025R7016 (FINAL).pdf |
Notice history
| Notice | Type | Posted |
|---|---|---|
| 4H-SiC Silicon Carbide (SiC) Integrated Circuit Processing on 100 mm Diameter SiC Wafers | Award Notice | |
| 4H-SiC Silicon Carbide (SiC) Integrated Circuit Processing on 100 mm Diameter SiC Wafers | Solicitation | |
| BACK-END-OF-LINE (BEOL) 4H-SiC Silicon Carbide (SiC) Integrated Circuit Processing on 100 mm Diameter SiC Wafers | Pre-Solicitation | |
| 4H-SiC Silicon Carbide (SiC) Integrated Circuit Processing on 100 mm Diameter SiC Wafers | Pre-Solicitation |
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