Definitive Contract 80GRC025C0005
- Not listed
- This is a $278,753 firm fixed-price contract awarded by the NASA Glenn Research Center to General Electric Company (GE) for the fabrication of small-feature extreme environment durable 4H-silicon carbide (SiC) junction field effect integrated circuits on 100 mm diameter SiC wafers. The contract has an ultimate completion date of October 17, 2025 and was not set aside for any specific business type. This contract is likely part of NASA's broader research and development efforts focused on...
- This federal contract award to General Electric Company (GE) is for the fabrication of silicon carbide, with a ceiling value of $111,224.00 and a completion date of December 2, 2025. The contract is a firm fixed-price purchase order awarded by the Shared Services Center, a civilian agency. The contract does not have a set-aside designation. GE's GE Research division will be performing the work in Schenectady, New York. As a prominent federal contractor, GE has extensive experience providing...
- This $160,427 firm fixed-price purchase order was awarded by the Shared Services Center, a civilian federal agency, to General Electric Company (GE) for the development of back-end-of-line (BEOL) silicon carbide (SiC) integrated circuit processing. The contract has a completion date of November 30, 2024. This award was made under a competitive solicitation issued by the NASA Glenn Research Center, which did not use a small business set-aside. The statement of work for this procurement...
- This federal contract award to General Electric Company (GE), through its GE Aviation division, aims to facilitate the use of silicon carbide/silicon carbide (SiC/SiC) materials in aerospace structures. The $1,781,135.00 cost-plus-fixed-fee contract, awarded by the Langley Research Center, requires GE to fabricate and characterize the material properties of SiC/SiC for a variety of layups over a range of temperatures using melt infiltration (MI) technology. The contract has an ultimate...
- General Electric Company (GE) has been awarded a $117,224 firm fixed price purchase order by the National Aeronautics and Space Administration (NASA) Shared Services Center to provide fabrication of silicon carbide high temperature electronics on 100mm silicon carbide wafers. The work will be performed in Schenectady, New York with an anticipated completion date of September 30, 2022. No set-aside designation was applied to this solicitation. As a leading provider of aerospace technologies and...
- This federal contract award, valued at $1,614,607.00, was issued to the General Electric Company (GE) by the National Aeronautics and Space Administration's (NASA) Langley Research Center. The contract is for the delivery of a group of melt infiltration processed silicon carbide/silicon carbide (SiC/SiC) aerodynamic control surfaces to be used for manufacturing demonstrations and material/component performance testing. The contract is a cost-plus-fixed-fee Delivery Order, with no small...
- This federal contract award is for a group of chemical vapor infiltration (CVI) processed carbon silicon carbide (C/SiC) and silicon carbide/silicon carbide (SiC/SiC) components required for manufacturing demonstrations and material/component performance testing. The $1,668,395.00 cost-plus-fixed-fee delivery order was awarded to General Electric Company (GE) through its GE Aviation division, operating as GE Edison Works. The contract was awarded on September 23, 2024 by the Langley Research...
- General Electric Company, operating through its GE Aviation division as GE Edison Works, has been awarded a cost-plus-fixed-fee delivery order contract valued at up to $1,043,475 by the National Aeronautics and Space Administration Langley Research Center. The contract is for the fabrication of silicon carbide/silicon carbide panels for characterization utilizing the melt infiltration densification process. Performance will take place in Wyoming, Ohio through July 2023. No set-aside...
- This federal contract award is for a group of chemical vapor infiltration (CVI) processed carbon silicon carbide (C/SiC) and silicon carbide/silicon carbide (SiC/SiC) components required for manufacturing demonstrations and material/component performance testing. The $1,775,139.00 cost-plus-fixed-fee delivery order was awarded to General Electric Company (GE) by the National Aeronautics and Space Administration (NASA) Langley Research Center, a civilian agency, on September 23, 2024, with a...
- This is a delivery order awarded by the NASA Langley Research Center to General Electric Company (GE) under an indefinite delivery, cost-plus-fixed-fee contract. The $1,967,340 contract is for the fabrication of 4 chemical vapor infiltration carbon/silicon carbide articles. The work will be performed in Wyoming, OH. The ultimate completion date is June 30, 2025. There was no set-aside used for this award. GE, operating through its GE Aviation division (DBA GE Edison Works), is a major supplier...
This federal contract was awarded by the Glenn Research Center, a civilian agency, to General Electric Company (GE) for the fabrication of V12B extreme environment durable 4H-SiC silicon carbide JFET ICs. The contract has a ceiling value of $340,317 and was awarded on November 18, 2025 with a final completion date of April 20, 2026. It is a definitive, firm-fixed price contract. GE will be performing the work at its facility in Schenectady, New York. This award is not associated with a set-aside program. GE has a long history of providing advanced research, engineering, and technology development services to various federal agencies, including NASA, the Department of Defense, and the Department of Energy. The company has expertise across multiple high-technology domains such as power systems, aerospace, healthcare, materials science, electronics, and advanced manufacturing.
Name | Description | Solicitation Number | FederalAgency | Type | PostedDate |
|---|---|---|---|---|---|
4H-SiC Silicon Carbide (SiC) Integrated Circuit Processing on 100 mm Diameter SiC Wafers | 80GRC025R7016_RFP | National Aeronautics and Space Administration Glenn Research Center | Solicitation 3/4 | 6/27/25, 3:37 PM | |
4H-SiC Silicon Carbide (SiC) Integrated Circuit Processing on 100 mm Diameter SiC Wafers | 80GRC025C0005 | National Aeronautics and Space Administration Glenn Research Center | Award Notice 4/4 | 9/29/25, 2:59 PM | |
BACK-END-OF-LINE (BEOL) 4H-SiC Silicon Carbide (SiC) Integrated Circuit Processing on 100 mm Diameter SiC Wafers | 80GRC025R7012_Presoliciation_Synopsis | National Aeronautics and Space Administration Glenn Research Center | Pre-Solicitation 2/4 | 6/12/25, 2:10 PM | |
4H-SiC Silicon Carbide (SiC) Integrated Circuit Processing on 100 mm Diameter SiC Wafers | 80GRC025R7012SS | National Aeronautics and Space Administration Glenn Research Center | Pre-Solicitation 1/4 | 4/11/25, 8:03 AM |
Mod # | Description | ReasonForModification | Federal Obligation | Date |
|---|---|---|---|---|
| Not listed | Not listed | $340.3k | 9/18/25 |