RIE Plasma System
Added: May 23, 2011 4:26 pm The Federal Bureau of Investigation (FBI) intends to negotiate a sole source, firm-fixed price contract with BSET EQ, 2525 W. 10th Street, STE "L", Antioch, CA 94505, under RFQ E013173. This notice will be distributed solely tough the General Services Administration's Federal Business Opportunities (FBO) web site www.fedbizopps.gov. Interested parties are responsible for monitoring the FBO site to ensure they have the most up-to-date information about this acquisition. BSET EQ is to provide an Reactive Ion Etch (RIE) Plasma System, FA2000 RIE, with oil filtration system charged with per-fluorinated fluid, oil mist eliminator for exhaust facilities. The technical specifications for the RIE Plasma System are: 1) USB and Ethernet Ports for saving recipes; 2) 27 CFM pump; 3) Factory install and training included; and, 4) Package Decapsulation (in addition to regular RIE operations). Based on extensive research conducted with knowledgeable individuals in Government and the related industry, BSET EQ has been deemed the only one responsible source that can provide the required item. This notice of intent is not a request for competitive quotations, however, interested parties may indentify their interest and capability to respond to this requirement or submit quotes to this office by 1:00 PM EST, 31 May 2011 via facsimile at 703-985-6103 or via mail to the attention of Gary Hopkins, FBI, Engineering Research Facility, Room A-226, Quantico, VA 22135. E-mail quotes will also be accepted at gwhopkins@fbiacademy.edu. Information received will be considered solely for the purpose of determining whether to conduct a competitive procurement. The north American Industrial Classification System number is 333295 - Etching equipment, semiconductor, manufacturing. This contract will be awarded as a commercial item in accordance with Federal Acquisition Regulation, Parts 12 and 13. All Contractors anticipating award, must be registered with the Central Contractor Registration Database. RFQ_E013173 Department of Justice Federal Bureau of Investigation Headquarters Division
5/23/11, 4:26 PM Purchase of Sputtering Source and Magnetic Materials Conversion Kit
Added: Jul 16, 2009 4:15 pm COMBINED SYNOPSIS/SOLICITATIONPurchase of Sputtering Source and Magnetic Materials Conversion Kit(I) This is a combined synopsis/solicitation for commercial items prepared in accordance with the format in FAR Subpart 12.6, as supplemented with additional information included in this notice and in accordance with the simplified acquisition procedures authorized in FAR Part 13. This announcement constitutes the only solicitation; proposals are being requested and a written solicitation will not be issued.(II) This solicitation is issued as a request for quotation (RFQ). Submit written quotes on RFQ Number NB818030-9-16506SRG.(III) The solicitation document and incorporated provisions and clauses are those in effect tough Federal Acquisition Circular 2005-35.(IV) This solicitation is being issued as a Total Small Business Set-Aside. The associated NAICS code is 333295. The small business size standard is 500 employees.(VI) Description of requirements is as follows: Brand Name or Equal to an AJA International Inc. (AJA) Model A320-XP UHV Sputtering Source and Model MMCK-A320 Magnetic Materials Conversion Kit.(V) This combined solicitation/synopsis is for purchase of the following commercial item:CLIN 0001 - Quantity: 4 - Magnetron Sputtering Source A - Brand Name or Equal to AJA A320-XP YHV Sputtering Source. Specifications: 2" target diameter, UHV compatible, Mounted on 8" CF flange, DC or AC sputtering, Operating pressure down to 0.5mTorr, Attached shutter, and End user convertible magnetic array for depositing nonmagnetic or magnetic materials.CLIN 0002 - Quantity: 4 - Magnetic Materials Magnet Array - Magnetic Materials Conversion Kit - Brand Name or Equal to AJA MMCK-A320. Specifications: Enable deposition of magnetic materials using Item #1, Installed/Removed by end user, and Minimum thickness of NiFe 80/20 targets of 1/8".CLIN 0003 - Quantity: 4 - Magnetron Sputtering Source - Brand Name or Equal to AJA Magnetron sputtering source A330-XP-MM. Specifications: 3" target diameter, UHV compatible, Mounted on 8" CF flange, DC or AC sputtering, Magnet array for magnetic materials - minimum thickness of NiFe 80/20 targets of 1/8", Operating pressure down to 0.5mTorr, and Attached shutter.CLIN 0004 - Quantity: 2 - Magnetron Power Supply A - Brand Name or Equal to AJA 750 Watt generator(s) DCXS-750-4. Specifications: DC operation, Minimum 750W, Built-in 4-way switchbox , and Front panel or remote operation.CLIN 0005 - Quantity: 1 - Magnetron Power Supply B - Brand Name or Equal to AJA AE Pinnacle Plus 5kW variable frequency PP-5K.Specifications: Pulsed Dc operation, Minimum 5kW, Variable frequency from 5 to 350 kHz, Variable duty cycle up to 45%, and Front panel or remote operation.(VII) Place of delivery is FOB Origin to NIST, 325 Broadway, Bldg 22 Boulder, CO 80305. Delivery shall be FOB Origin to Boulder, Colorado using the government FedEx account which will be provided by the soliciting government agency. Required delivery is no later than 6 weeks after receipt of order; offerors shall state offered delivery ARO.(VIII) FAR 52.212-1, Instructions to Offerors -- Commercial Items (June 2008), applies to this acquisition. In addition to written price quotes, offers are instructed to provide the brand name of an "equal" product, including manufacturer and model number, capability statement and/or past performance references describing qualifications and ability to provide products, specifications of the product and to provide requirements listed in paragraphs (V) and (VI).(IX) FAR 52.212-2, Evaluation - Commercial Items (Jan 1999), applies to this acquisition. Paragraph (a) is hereby completed as follows: Offers will be evaluated based on meeting the specifications set forth in paragraphs (V) and (VI), delivery date, "price on an all or none basis", and provide the brand name of an "equal" product, including manufacturer and model number. Award will be made based to the Contractor whose quote offers the best value to the Government, price and other factors considered. Offers will be evaluated based on price and the factors set forth in paragraph (a), and award will be made to the firm offering the best value to the Government on an all or none basis.(X) The offeror must submit a completed copy of the provision at FAR 52.212-3, Offeror Representations and Certifications - Commercial Items (July 2009), with its quote. An offeror shall complete only paragraph (b) of this provision if the offeror has completed the annual representations and certifications electronically at http://orca.bpn.gov. If an offeror has not completed the annual representations and certifications electronically at the ORCA website, the offeror shall complete only paragraphs (c) tough (m) of this provision.(XI) The clause at FAR 52.212-4, Contract Terms and Conditions - Commercial Items (Mar 2009), applies to this acquisition.(XII) The clause at FAR 52.212-5, Contract Terms and Conditions Required to Implement Statutes or Executive Orders - Commercial Items (June 2009) applies to this acquisition. The following clauses under subparagraph (b) apply:(18) 52.219-28, Post Award Small Business Program Rerepresentation (Apr 2009) (15 U.S.C. 632(a)(2)).(19) 52.222-3, Convict Labor (June 2003) (E.O. 11755).(20) 52.222-19, Child Labor-Cooperation with Authorities and Remedies (Feb 2008) (E.O. 13126). (21) 52.222-21, Prohibition of Segregated Facilities (Feb 1999). (22) 52.222-26, Equal Opportunity (Mar 2007) (E.O. 11246). (24) 52.222-36, Affirmative Action for Workers with Disabilities (Jun 1998) (29 U.S.C. 793). (31) 52.225-1, Buy American Act-Supplies (Feb 2009) (41 U.S.C. 10a-10d). (32)(i) 52.225-3, Buy American Act-Free Trade Agreements-Israeli Trade Act (June 2009)(34) 52.225-13, Restrictions on Certain Foreign Purchases (June 2008) (E.O.'s, proclamations, and statutes administered by the Office of Foreign Assets Control of the Department of the Treasury). (39) 52.232-33, Payment by Electronic Funds Transfer-Central Contractor Registration (Oct 2003) (31 U.S.C. 3332).The following clauses under subparagraph (c) apply: None in this subparagraph apply.(XIII) The following clauses are also applicable to this acquisition: 52.252-2 Clauses Incorporated By Reference (Feb 1998) This contract incorporates one or more clauses by reference, with the same force and effect as if they were given in full text. Upon request, the Contracting Officer will make their full text available. Also, the full text of a clause may be accessed electronically at this/these address(es): http:www.arnet.gov(End of clause) The following additional terms and conditions apply: 52.214-34 Submission of Offers in the English Language (Apr 1991) 52.214-35 Submission of Offers in U.S. Currency (Apr 1991) 52.211-6 Brand Name or Equal (Aug 1999).(XIV) Defense Priorities and Allocations System (DPAS) and assigned rating does not apply.(XV) The Government intends to award a firm-fixed-price contract type order resulting from this solicitation. Quotes are required to be received in the contracting office no later than 12:01 P.M. MST/MDT on July 23, 2009. All quotes must be faxed or emailed to the attention of Suzanne A. Romberg-Garrett, Purchasing Agent. The fax number is (303) 497-7719 and email address is Suzanne.Romberg-Garrett@NOAA.gov.(XII) Any questions regarding this solicitation should be directed to Suzanne A. Romberg-Garrett at 303-497-5110 or via email at Suzanne.Romberg-Garrett@NOAA.gov. NB818030-9-16506SRG Department of Commerce National Oceanic and Atmospheric Administration
7/16/09, 4:15 PM VACUUM CHAMBER
Added: May 19, 2008 5:15 pm NASA/GSFC has a requirement for a 36in OD X 70in Length custom vacuum chamberincluding:Chamber36 OD chamber with welded domed end on one side;Hinged door on other side;38 OD O-rings on chamber ends;(1) ASA 1600X10 flanged port;(4) ASA 1100X80 flanged ports;(1) F0600X400N flanged port;(2) F0450X250N flanged ports;(14) F0276X250N flanged ports;(1) Custom flange Chamber end cap;(1) Custom blank to fit to chamber end cap w/hardwareHinged Door38 OD rings on door w/welded standard 36 R flanged dome head;(1) F0600X400N flanged port;(1) F0275X150N flanged portFrame AssemblyPainted NASA blue aluminum frame assembly;32.50 WIDE X 73.25 LONG19 rack mounting front and rear sides;Testing Welded components shall be leak tested with helium mass spectrometer with a Sensitivityof 5 X 10^-9 STD cm^3 sm^-1NASA/GSFC intends to purchase the items from Kurt J. Lesker Company pursuant to FAR13.106, for the acquisition of supplies or services determined to be reasonably availablefrom only one source. Vendor shall deliver on or before September 1, 2008.The Government intends to acquire a commercial item using FAR Part 12.Interested organizations may submit their capabilities and qualifications to perform theeffort in writing to the identified point of contact not later than 2:30 p.m. EST timeon the date listed above. Such capabilities/qualifications will be evaluated solely forthe purpose of determining whether or not to conduct this procurement on a competitivebasis. A determination by the Government not to compete this proposed effort on a fulland open competition basis, based upon responses to this notice, is solely within thediscretion of the government.Oral communications are not acceptable in response to this notice.All responsible sources may submit an offer which shall be considered by the agency.An Ombudsman has been appointed. NNG051908Q National Aeronautics and Space Administration Goddard Space Center
5/19/08, 5:15 PM GCA Autostep 200 Series Photolithography Stepper
Added: Jul 19, 2012 1:26 pm This is a combined synopsis/solicitation FA8601-12-R-0111 for a refurbished GCA Autostep 200 Series Photolithography Stepper, was prepared in accordance with the format in Federal Acquisition Requirements (FAR) Subpart 12.6, as supplemented with additional information included in this notice. This announcement constitutes the only solicitation; proposals are being requested. Please see attachment to this announcement for full proposal information.This solicitation document is Full and Open Competition under North American Industry Classification System Code 333295. Size standard is 500 employees.The Government will award a contract resulting from this solicitation to the responsible offeror whose offer conforming to the solicitation will be most advantageous to the Government, price and other factors considered. The following factors shall be used to evaluate offers: Technical Capability and Price.The quotations may be in any format but MUST include: 1) Proposing company's name, address, Tax ID Number, Cage Code and phone2) Point of contact's name, phone, and email 3) Quotation number & date 4) Item price 5) Total price (Net 30)6) Shipping (FOB Destination)7) Applicable discounts 8) Timeframe that the quote is valid9) Delivery Schedule 10) Warranty Information (if applicable). 11) Completed FAR 52.212-3, Representations and Certifications 12) Completed DFARS 252.209-7998, Representation Regarding Conviction of a Felony Criminal Violation (See Attachment 1)13) Completed DFARS 252.209-7999, Representation by Corporations Regarding an Unpaid Delinquent Tax Liability or a Felony Conviction under Federal Law (See Attachment 2)Quotations MUST also contain a complete description of item offered to clearly show item meets or exceeds the requirements listed above. The Contracting Officer will review quotations based on the factors listed in this solicitation and the information furnished by the offeror. Before price is considered, the proposal must meet the technical capabilities.IMPORTANT NOTICE TO CONTRACTORS: All prospective awardees are required to register at the Central Contractor's Register (CCR) and to maintain active registration during the life of the contract. CCR can be accessed at https://www.bpn.gov. Any award resulting from this solicitation will include DFARS Clause 252.232-7003, Electronic Submission of Payment Requests. Section 1008 of the National Defense Authorization Act of Fiscal Year 2001 requires any claims for payment (invoices) under DoD contract to be submitted in electronic form. Wide area Workflow- Receipt and Acceptance (WAWF-RA) is the DoD system of choice for implementing this statutory requirement. Use of the basic system is at no cost to the contractor. Contractors must complete vendor training, which is also available at no cost at http://www.wawftraining.com. Prior to submitting invoices in the production system, contractors must register for an account at http://wawf.eb.mil/.All Quotations and responses must be received no later than 2:00 PM, Eastern Standard Time on 3 August 2012. Submittal of quotes in response to this RFQ constitutes agreement by the offeror of all terms & conditions contained herein, which will also be the terms & conditions of resulting contract. Please email to Matthew.Strange@wpafb.af.mil via a PDF compatible attachmentAny questions should be directed to Matthew Strange at Matthew.Strange@wpafb.af.mil. FA8601-12-R-0111 Department of the Air Force Materiel Command Lifecycle Management Center Wright Patterson Air Force Base
7/19/12, 1:26 PM Multi Target Sputtering System
Added: Aug 28, 2012 3:18 pm This is a combined synopsis/solicitation for commercial items prepared in accordance with the format in Subpart 12.6, as supplemented with additional information included in this notice. This announcement constitutes the only solicitation; proposals are being requested and a written solicitation will not be issued. CLIN 0001 : One (1) multi-target sputter system in accordance with the requirements detailed in (vi) below. CLIN 0002 OPTION 1: One (1) Spare Parts Kit to include high wear items (such as valves, o-rings, solenoids, Mass Flow Controllers (MFCs)) typical for sputter system operating in a 24/7 environment to maintain operation for one (1) year.CLIN 0003 OPTION 2: Hardware for a spare sputtering source including one (1) magnetron sources capable of handling 4 inch or 100 millimeter (mm) diameter targets and one (1) flex mount assembly to provide tilt capability.CLIN 0004 OPTION 3: High Magnetic sputter source upgrade for deposition of magnetic materials such as Ni, NiFe, NiCo, including all related sputtering hardware.CLIN 0005 OPTION 4: One (1) Radio Frequency (RF) power supply with automatic matching network and control with a minimum of 600 Watts (W).CLIN 0006 OPTION 5: One (1) DC Power Supply with advanced arc handling and a minimum of 2 kilowatts (kW).CLIN 0007 OPTION 6: One (1) DC Power Supply with advanced arc handling capability and a minimum of 5 kW.CLIN 0008 OPTION 7: One (1) Pulsed DC Power Supply with arc repression and a minimum of 1.5 kW.CLIN 0009 OPTION 8: Residual Gas Analyzer that is differentially pumped and is a stand-alone system, complete with pumping and software (vi) Description of requirements: 1. The Contractor shall ensure that the multi-target sputtering system can process wafer/substrate with specifications listed in Table 1 below. Table1Wafer Diameter (mm) Thickness Range Micrometer (um) Configuration Common Materials100mm 200um-1000um Semiconductor Equipment and Materials International (SEMI) standard flats Silicon, Glass, Gallium Arsenide, Sapphire, Silicon Carbide150mm 200um-1000um SEMI standard flats or notch Silicon, Glass, Gallium Arsenide, Sapphire, Silicon Carbide200mm 400um-1000um SEMI standard flats or notch Silicon, Glass, Gallium Arsenide, Sapphire, Silicon CarbideThe Contractor shall ensure that the multi-target sputtering system is equipped with the following equipment and can meet the following minimum requirements: Overall:- Has class 100 compatibility in its entirety.- Is capable of being operated in 1) automatic mode utilizing programmed process operations; 2) semi-automatic mode utilizing safety interlock features; or 3) manual mode allowing independent control of all operating components.- Has the ability to meet current industry standard requirements for safety including the use of Emergency Off (EMO) panic buttons, shielding and interlocks for hazardous areas including high voltages and moving parts. A process chamber :- Water cooled - Sized to accommodate use of wafer substrates up to and including 200mm in diameter and the use of up to tee (3) sputtering sources- Water cooled front access door- A minimum of one (1) viewport with viewport shutter- Appropriate pumping, vacuum gauging, and instrumentation ports- Removable chamber liners - two (2) sets- Minimum of four (4) process gases to be configured for Nitrogen (N2), Oxygen (O2), Argon (Ar) and Helium (He) Magnetron sputtering sources:- Capable of simultaneous co-sputtering from a minimum of two (2) sputter sources. Contractor must identify if co-sputtering from tee (3) sources is possible. - Minimum of tee (3) magnetron sources capable of handling 4 inch or 100 millimeter (mm) diameter targets- Minimum of tee (3) individual deposition shutters, one for each sputtering source- Minimum of tee (3) flex mount assemblies to provide tilt adjustment capability - Sputter down configuration- Contractor shall provide all sputtering source targets for acceptance tests detailed in Sections 2.1 and 2.4- Sputter source operation Single source operation capable of concurrent radio frequency (RF), direct current (DC), or pulse DC operation or any combination thereof on any of the tee (3) sputter sources Dual source operation capable of concurrent RF, DC, or pulse DC operation or any combination thereof on any two (2) of the tee (3) sputter sources Triple source operation capable of concurrent RF, DC, or pulse DC operation or any combination thereof on all tee (3) sputter sources- Sputter Power Supplies Minimum of one (1) RF power supply with automatic matching network and control with a minimum of 600 Watts (W) Minimum of one (1) Pulsed DC Power Supply with variable frequency arc repression and a minimum of 1.5 kilowatts (kW)- Minimum of one (1) Multi-position DC or Radio Frequency (RF) switch that can be connected from a power supply to any of the sputtering sources permitting sequential operation of each cathode.- Sputtering sources must be configured and accessible such that a target change will take a technician less than ten (10) minutes once the system is vented. Substrate- Substrate heating to a minimum of 800 degrees Celsius- Variable speed, rotating substrate fixture with a speed of at least 20 revolutions per minute (rpm) with speed control- Accommodates the substrates listed in Table 1as well as piece parts thereof (piece part mounting to a carrier substrate is acceptable). - RF/DC bias capability with appropriate darkspace shielding- One (1) RF power supply with automatic tuning for substrate bias with a minimum of 100W- Gas injection ring or equivalent means of introducing process gases directly to substrate Vacuum System- Chamber - Turbomolecular pump with a pumping speed of at least 1000 liter(l)/second (s)- Minimum tee (3)-position Gate valve- Load lock - Single wafer up to 200 mm diameter Turbomolecular pump with a pumping speed of at least 60 l/s - Mechanical roughing pump- Appropriate vacuum gauging and instrumentation- Upstream pressure control- Capable of reaching a base vacuum less than 1x10-6 milliTorr(mT) in 20 minutes Water distribution manifold- Manual shut off valves - Interlocked flow switches to critical components Power Distribution- Electrical components based on standard voltages, frequency and currents used in the United States of America (USA) - Single service drop (208 Volts Alternative Current (VAC), 50/60 Hertz (Hz), 3-phase, 5-wire, 60 Amperes (amps) based on configuration)- Component wiring is routed to a centralized power distribution panel- EMO protection - Isolation transformer providing safe operation for sputtering while substrate heating- Appropriate safety interlocks- Dedicated earth ground provided on-site Documentation- Operation manual provided as portable document format (PDF)- General assembly, vacuum, water, and electrical schematics provided as PDF Troubleshooting- Access to a technical support person to answer questions regarding tool operation, hardware troubleshooting and basic sputter deposition processing via telephone and email during normal business hours 8AM-5PM for the time zone of the Contractor's main base of operation. Hardware Warranty- Hardware warranty for one (1) year beginning the first day of approval of the Post-installation Acceptance Tests Report (reference Section 7). Hardware warranty must cover 1) parts (excluding consumable parts and materials); 2) repairs and modifications if the multi-target sputtering system is no longer functional according to the acceptance tests specifications (reference Section 6); 3) all required labor and transportation costs (including airfare, accommodation and per diems) to and from ARL for the technical support individual, if necessary. - Service request response time of 48 hours from the time the Government Technical Representative calls or emails in a request for service. Software Warranty- Software warranty for 18 months beginning the first day of approval of the Post-installation Acceptance Test Report (reference Section 7). Software warranty must cover all new software issues and upgrades for (3) years. Training- At least one (1) day of on-site training on the maintenance and operation of the multi-target sputtering system. Software & Computer Control- Current versions of all software-related components- Personal Computer (PC)- based system configured with CD-RW drive and Univeral Serial Bus (USB) ports- Screen layouts follow the guidelines of SEMI E95-0200 (Specification for Human Interface for Semiconductor Manufacturing Equipment)- PC provides supervisory computer control over vacuum pumping, vent, and cryo pump regeneration cycles (when applicable). It also controls deposition power supplies Multi Function Centers (MFC)'s, substrate heating, and substrate fixture motor rotation (when applicable).- Includes Graphical User Interface (GUI) display of the following system parameters, when applicable: Vacuum Screen: Visual display of valve position, pump status and vacuum status Deposition Screen: Indication of shutter position, Deposition source status, Source material & target life log Gas Screen: Mass flow controller modes, Indication of gas valve status, Display of pressure control settings and values Motion Screen: Display & input of speed and velocity profiles, Display & input of proportional-integral-derivative (PID) control parameters Cooling Screen: Water flow switch interlock status Heating Screen: Set points & control parameters- Software Process programming and history logging accessible as readable text, comma separated variable, or Excel data file.- Definitions: Standard wafers - SEMI specification format in terms of geometry, with low to moderate wafer bow (less than 30 micrometers (um)), within the contracted materials and thickness range, minimal backside patterning, and no tough wafer vias. Fault: Something has gone wrong. Failure: Equipment has a problem, requires repair. Repair: Modification to hardware or software necessary for equipment to return to the standard operational specification as outlined in Section 2 and Section 3. High Failure: Failure compromising personnel safety, equipment damage or product damage. Low Failure: Failure not comprising personal safety, equipment damage or product damage. Assist: Unplanned interruption, recoverable by operator reset without requiring repair. Post reset there is no variation from specified process behavior. Uptime: Percentage of twelve (12) hour shift time that the equipment is able to process as specified.- Metrics (means are calculated during the test interval): MTBHF(Mean Time Before High Failure) No significant process variation from predetermined process set, processing standard and wafers. Greater than ninety (90) days (i.e. less than one (1) qualifying event per ninety (90) days). MTBLF (Mean Time Before Low Failure) No significant process variation from predetermined process set, processing standard and wafers. Greater than thirty (30) days (i.e. less than tee (3) qualifying event per 90 days). MTBA (Mean Time Before Assist) Greater than five (5) days (i.e. less than 18 qualifying events per 90 days). MTTR (Mean Time to Repair) Time tool is not available for processing. Less than 72 hours Uptime Higher than 95%2. Pre-installation Acceptance TestsThe Contractor shall ensure that the multi-target sputtering system is fully functional at the Contractor's facility in accordance with the Government's Pre-Installation Acceptance Tests as follows:2.1 Demonstrate that the deposition meets base specifications as described in the salient characteristics, which includes wafer handling, thermal processing temperatures, ramp rates, temperature uniformity, gas line configuration, and computer control.2.2 Demonstrate that the multi-target sputtering system is operationally functional, which includes: Substrate handling queuing, and processing for at least 50 wafers (150 millimeters (mm) in diameter)o Pump in load lock, transfer to chamber, return to loadlock, Vento Atmospheric pump down of loadlock to facilitate chamber transfer in less than 10 minutes Configured with four (4) gas lines (for N2, O2, Ar, and He) Substrate heating and rotationo Operating with a temperature range of operation of at least room temperature to 800 degrees Celsius Depositiono Verify DC and pulse DC operation using Titanium (Ti) sputter sources Substrate - Silicon (Si) / Silicon Dioxide (SiO2) (500 nanometers (nm)) Film thickness - 20 nm Cross-wafer uniformity on 150mm substrate less than 5% as measured by a sheet resistance measurement Cross-wafer uniformity on 200mm substrate less than 6% as measured by a sheet resistance measuremento Verify DC and pulse DC operation using Molybdenum (Mo) sputter sources Substrate - Si / SiO2 (500nm) Film thickness - 200 nm Cross-wafer uniformity on 150mm substrate less than 5% as measured by a sheet resistance measurement Cross-wafer uniformity on 200mm substrate less than 6% as measured by a sheet resistance measuremento Verify reactive operation for the deposition of SiO2 using a Si sputter sources Substrate - Si Film thickness - 100 nm Film refractive index ranging from 1.45 to 1.47 Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometry Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometryo Verify RF operation using SiO2 sputter source Substrate - Si Film thickness - 100 nm Film refractive index ranging from 1.45 to 1.47 Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometry Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometryo Verify RF operation using Silicon Nitride (Si3N4) sputter source Substrate - Si Film thickness - 100 nm Film refractive index ranging from 1.9 to 2.05 Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometry Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometryo Verify thick deposition of SiO2 coatings Substrate - Si Film thickness - 2000 nm (Note: ultimate goal would be 5 to 7 microns) Film refractive index ranging from 1.45 to 1.47 Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometry Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometryo Verify multilayer coating process with SiO2 and Si3N4 sputter sources Substrate - Si SiO2 layer thickness - 200nm Si3N4 layer thickness - 50nm Total layers - 10 starting with Si3N4 coating Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometry Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometryo Verify graded simultaneous co-sputtering using Si and copper (Cu) sputter sources Substrate - Si Thickness - 1 micron total Deposition starts with Si at a set power and Cu at zero power Si power is slowly ramped down while Cu power is ramped up Deposition ends with Cu at a set power and Si at zero power Cross-wafer uniformity on 150mm substrate less than 5% as measured by a sheet resistance measurement or step height profiometry Cross-wafer uniformity on 200mm substrate less than 6% as measured by a sheet resistance measurement or step height profiometryo Verify graded simultaneous co-sputtering using Si, copper (Cu) and Aluminum (Al) sputter sources Substrate - Si Thickness - 1 micron total Deposition starts with Si at a set power and Cu at zero power Si power is slowly ramped down while Cu power is ramped up until Si and Cu reach 50% set power Cu is held at 50%set power, while Al is power is slowly ramped up and Si is slowly ramped down until Si is at zero power and Al is at 50% set power Cu is slowly ramped down and Al is slowly ramped up Deposition ends with Al at a set power and Cu at zero power Cross-wafer uniformity on 150mm substrate less than 5% as measured by a sheet resistance measurement or step height profiometry Cross-wafer uniformity on 200mm substrate less than 6% as measured by a sheet resistance measurement or step height profiometryo Verify dual sputter source operation with DC and/or pulse DC operation using Titanium (Ti) sputter sources Substrate - Silicon (Si) / Silicon Dioxide (SiO2) (500 nanometers (nm)) Film thickness - 20 nm Cross-wafer uniformity on 150mm substrate less than 5% as measured by a sheet resistance measurement Cross-wafer uniformity on 200mm substrate less than 6% as measured by a sheet resistance measuremento Verify triple sputter source operation with DC and/or pulse DC operation using Titanium (Ti) sputter sources Substrate - Silicon (Si) / Silicon Dioxide (SiO2) (500 nanometers (nm)) Film thickness - 20 nm Cross-wafer uniformity on 150mm substrate less than 5% as measured by a sheet resistance measurement Cross-wafer uniformity on 200mm substrate less than 6% as measured by a sheet resistance measuremento Verify dual sputter source operation with RF operation using SiO2 sputter sources Substrate - Silicon (Si) Film thickness - 100 nm Film refractive index ranging from 1.45 to 1.47 Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometry Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometryo Verify triple sputter source operation with RF operation using SiO2 sputter sources Substrate - Silicon (Si) Film thickness - 100 nm Film refractive index ranging from 1.45 to 1.47 Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometry Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometryo Deposition uniformity Wafer-to-wafer uniformity (minimum 10 wafers) using Ti sputter source Wafer-to-wafer uniformity (minimum 10 wafers) using SiO2 sputter source Average thickness uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometry Average thickness uniformity on 200mm substrate less than 6% as measured by a ellipsometry, reflectometry, or step height profilometry2.3 The Government Technical Representative reserves the right to witness the acceptance testing procedure at the Contractor's site. The Contractor shall notify the Government Technical Representative within one (1) month of the pre-installation acceptance testing date.3. Pre-installation Acceptance Tests ReportThe Contractor shall submit a pre-installation acceptance tests report to the Government Technical Representative outlining the results of the acceptance tests within one (1) week of the acceptance testing at the Contractor's site. The Government Technical Representative will review and approve the pre-installation acceptance tests report within one (1) week of receiving the pre-installation acceptance tests report. The Contractor shall ship the multi-target sputtering only after the Government Technical Representative has authorized the test results. 4. Delivery and InstallationThe Contractor shall deliver and install the multi-target sputtering system to ARL, 2800 Powder Mill Road, Building 207, Room 3B-41, within two (2) weeks of receiving approval of the pre-installation acceptance tests report from the Government Technical Representative. 5. Post-installation Acceptance TestsThe Contractor shall ensure that the multi-target sputtering system is fully functional after the system has been installed in room 3B-41 at ARL using the following Government-created acceptance tests:5.1 Demonstrate that the multi-target sputtering system meets base specifications as described in Section 2, which includes wafer handling, thermal processing temperatures, ramp rates, temperature uniformity, gas line configuration, and computer control.5.2 Demonstrate that the multi-target sputtering system is operationally functional, which includes: Substrate handling queuing, and processing for at least 50 wafers (150mm in diameter)o Pump in load lock, transfer to chamber, return to loadlock, Vento Atmospheric pump down of loadlock to facilitate chamber transfer in less than 10 minutes Configured with four (4) gas lines (for N2, O2, Ar, and He) Substrate heating and rotationo Operating with a temperature range of operation of at least room temperature to 800 degrees Celsius Depositiono General requirement: All deposited films adhere to the substrates with no indication of film delamination, pitting, or cracking.o Verify DC and pulse DC operation using Titanium (Ti) sputter sources Substrate - Silicon (Si) / Silicon Dioxide (SiO2) (500 nanometers (nm)) Film thickness - 20 nm Cross-wafer uniformity on 150mm substrate less than 5% as measured by a sheet resistance measurement Cross-wafer uniformity on 200mm substrate less than 6% as measured by a sheet resistance measuremento Verify DC and pulse DC operation using Molybdenum (Mo) sputter sources Substrate - Si / SiO2 (500nm) Film thickness - 200 nm Cross-wafer uniformity on 150mm substrate less than 5% as measured by a sheet resistance measurement Cross-wafer uniformity on 200mm substrate less than 6% as measured by a sheet resistance measuremento Verify reactive operation for the deposition of SiO2 using a Si sputter sources Substrate - Si Film thickness - 100 nm Film refractive index ranging from 1.45 to 1.47 Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometry Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometryo Verify RF operation using SiO2 sputter source Substrate - Si Film thickness - 100 nm Film refractive index ranging from 1.45 to 1.47 Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometry Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometryo Verify RF operation using Silicon Nitride (Si3N4) sputter source Substrate - Si Film thickness - 100 nm Film refractive index ranging from 1.9 to 2.05 Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometry Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometryo Verify thick deposition of SiO2 coatings Substrate - Si Film thickness - 2000 nm (Note: ultimate goal would be 5 to7 microns) Film refractive index ranging from 1.45 to 1.47 Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometry Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometryo Verify multilayer coating process with SiO2 and Si3N4 sputter sources Substrate - Si SiO2 layer thickness - 200nm Si3N4 layer thickness - 50nm Total layers - 10 starting with Si3N4 coating Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometry Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometryo Verify graded simultaneous co-sputtering using Si and copper (Cu) sputter sources Substrate - Si Thickness - 1 micron total Deposition starts with Si at a set power and Cu at zero power Si power is slowly ramped down while Cu power is ramped up Deposition ends with Cu at a set power and Si at zero power Cross-wafer uniformity on 150mm substrate less than 5% as measured by a sheet resistance measurement or step height profiometry Cross-wafer uniformity on 200mm substrate less than 6% as measured by a sheet resistance measurement or step height profiometryo Verify graded simultaneous co-sputtering using Si, copper (Cu) and Aluminum (Al) sputter sources Substrate - Si Thickness - 1 micron total Deposition starts with Si at a set power and Cu at zero power Si power is slowly ramped down while Cu power is ramped up until Si and Cu reach 50% set power Cu is held at 50%set power, while Al is power is slowly ramped up and Si is slowly ramped down until Si is at zero power and Al is at 50% set power Cu is slowly ramped down and Al is slowly ramped up Deposition ends with Al at a set power and Cu at zero power Cross-wafer uniformity on 150mm substrate less than 5% as measured by a sheet resistance measurement or step height profiometry Cross-wafer uniformity on 200mm substrate less than 6% as measured by a sheet resistance measurement or step height profiometryo Verify dual sputter source operation with DC and/or pulse DC operation using Titanium (Ti) sputter sources Substrate - Silicon (Si) / Silicon Dioxide (SiO2) (500 nanometers (nm)) Film thickness - 20 nm Cross-wafer uniformity on 150mm substrate less than 5% as measured by a sheet resistance measurement Cross-wafer uniformity on 200mm substrate less than 6% as measured by a sheet resistance measuremento Verify triple sputter source operation with DC and/or pulse DC operation using Titanium (Ti) sputter sources Substrate - Silicon (Si) / Silicon Dioxide (SiO2) (500 nanometers (nm)) Film thickness - 20 nm Cross-wafer uniformity on 150mm substrate less than 5% as measured by a sheet resistance measurement Cross-wafer uniformity on 200mm substrate less than 6% as measured by a sheet resistance measuremento Verify dual sputter source operation with RF operation using SiO2 sputter sources Substrate - Silicon (Si) Film thickness - 100 nm Film refractive index ranging from 1.45 to 1.47 Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometry Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometryo Verify triple sputter source operation with RF operation using SiO2 sputter sources Substrate - Silicon (Si) Film thickness - 100 nm Film refractive index ranging from 1.45 to 1.47 Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometry Cross-wafer uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometryo Deposition uniformity Wafer-to-wafer uniformity (minimum 10 wafers) using Ti sputter source Wafer-to-wafer uniformity (minimum 10 wafers) using SiO2 sputter source Average thickness uniformity on 150mm substrate less than 5% as measured by a ellipsometry, reflectometry, or step height profilometry Average thickness uniformity on 200mm substrate less than 6% as measured by a ellipsometry, reflectometry, or step height profilometry5.3 The Government Technical Representative reserves the right to witness the acceptance testing procedure at ARL. The Contractor shall notify the Government Technical Representative two (2) weeks before the post-installation acceptance testing date. 6. Post-installation Acceptance Tests ReportThe Contractor shall submit a post-installation acceptance tests report to the Government Technical Representative outlining the results of the acceptance tests within one (1) week after completion of the post-installation acceptance. The Government will approve the post-installation acceptance tests report within one (1) week of receiving the post-installation acceptance tests report W911QX12R0032 Department of the Army Materiel Command Army Contracting Command Aberdeen Proving Ground
8/28/12, 3:18 PM