Silicon Carbide (SiC)
Closed Pre-Solicitation Posted
- Solicitation number
- W911QX24Q0010
- Agency
- ACC Aberdeen Proving Ground Army Contracting Command, Department of Defense
- Responses due
- Set-aside
- No set-aside
Opportunity facts
- NAICS code
- 334413 Semiconductor and Related Device Manufacturing
- PSC
- 6810 Chemicals
- Place of performance
- Adelphi, Maryland 20783, United States
Notice details come from SAM.gov. Updated .
About this opportunity
The Army Research Laboratory's Quantum Science and Technology Branch seeks 20 silicon carbide substrates for growth of silicon carbide devices to support optoelectronics and technology development efforts. The substrates must meet specifications including 150mm diameter, 350um thickness, 4 degree off-cut, nitrogen doping, and delivery within three months of award. Responses to the sources sought notice are requested by November 3rd and should address the extent to which specifications can be met, business size and experience.
There is no set-aside designated for this pre-solicitation. The substrates must be 150mm diameter silicon carbide wafers, 350um thick, with 4 degree off-cut and nitrogen doping. Delivery of 20 units is required within three months of award.
Notice text
The Quantum Science and Technology Branch at the Army Research Laboratory (ARL) requires a quantity of 20 Silicon Carbide (SiC) substrates for growth of Silicon Carbide devices. Specifically, the 20 Silicon Carbide substrates will be used for optoelectronics, and technology development. The contractor shall provide 20 Silicon Carbide substrates that includes the following minimum specifications of the Government:
- The waver shall be 150 millimeters (mm) diameter silicon carbide (SiC) wafers
- The wafer shall be 47.5 mm flat
- The wafer shall be 350 micrometers plus or minus (+/-) 50 micrometers thick.
- Shall have a four (4) degrees (°) off-cut
- Shall be nitrogen doped (N+)
- Shall be double-side polished
- Silicon (Si-face Epi-Ready), Epi-Ready the surface is in a condition such the monocrystalline Epi layer can be successfully grown on it. The surface roughness is in the order of 1 nanometer (nm) and the surface is free of dust particles and metal contamination.
- The wafer shall be 4H-polytype
- Basal Plane Dislocation (BPD) densities below 3000 per square centimeter (<3000 cm^-3) for epitaxial growth of 4H-SiC. This lower BPD density will improve the devices grown on these wafers, which will assist in our overall research.
- Shall have Threading Edge Dislocations (TED) below 3000 per square centimeter for epitaxial growth of 4H-SiC
- Total usable surface area of the wafer- Quantitative by automated optical surface inspection and 2mm x 2mm site map greater than (>) 90 percent (%).
Delivery address:
US ARMY RESEARCH LABORATORY
SHIPPING & RECEIVING
ATTN BRENDA VANMIL
2800 POWDER MILL RD
ADELPHI MD 20783-1138
301-394-0979
Delivery should be no later than three months after the award.
Attachments
| File | Type | Posted |
|---|---|---|
| Sources Sought.doc | DOC document |
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