Sources Sought.doc
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- Attached to
- Silicon Carbide (SiC) Federal contract opportunity
- Solicitation number
- W911QX24Q0010
About this file
This sources sought notice requests information from potential offerors for 20 silicon carbide substrates to be used for optoelectronics and technology development by the Army Research Laboratory. Responses are requested within five days of posting and should include the extent to which specifications can be met, business classification and size, and experience with similar projects. The substrates must be 150mm diameter silicon carbide wafers, 350um thick, with 4 degree off-cut and nitrogen doping. Delivery within three months of award is required. The solicitation number is W911QX24Q0010 and responses should be emailed to the contracting specialist at the provided address.
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(1) Action Code :
SOURCES SOUGHT
This is a Sources Sought Notice only. This is not a request for proposal, but a survey to locate potential sources. This Sources Sought does not constitute an Invitation for Bids, Request for Proposals, or a Request for Quotations, and is not to be construed as a commitment by the Government to issue an order or otherwise pay for the information solicited, nor is it a guarantee of a forthcoming solicitation or contract. It is for market research purposes only. Respondents will not be notified of the results of the evaluation.
The purpose of this Sources Sought Notice is to gain knowledge of interest, capabilities, and qualifications of various members of industry, to include the Small Business Community: Small Business, Section 8(a), Historically Underutilized Business Zones (HUB-Zone), Service-Disabled Veteran-Owned Small Business (SDVOSB), Women-Owned Small Business (WOSB), and Economically Disadvantaged Women-Owned Small Business (EDWOSB). The Government must ensure there is adequate competition among the potential pool of responsible contractors. Small business, Section 8(a), HUBZone, SDVOSB, WOSB, & EDWOSB businesses are highly encouraged to participate.
(2) Date: 27 October 2023
(3) Classification Code: 68
(4) NAICS Code: 334413
(5) NAICS Size Standard: 1250 Employees
(6) Contracting Office Address:
2800 Powder Mill Road Bldg. 601 Adelphi, Maryland 20783
(7) Subject:
Sources Sought for a quantity of 20 Silicon Carbide (SiC) substrates for growth of Silicon Carbide devices. Specifically, the 20 Silicon Carbide substrates will be used for optoelectronics, and technology development.
(8) Proposed Solicitation Number: W911QX-24-Q-0010
(9) Sources Sought Closing Response Date: Five (5) days after date of posting
(10) Contact Point:
David Erb, Contract Specialist, david.j.erb4.civ@army.mil or 301-394-2895 (11)
A. Objective:
To find sources that are qualified to meet the supplies/services as listed in section 11B. Note that the specific requirements in section C are subject to change prior to the release of any solicitation.
B. Salient Characteristics The Quantum Science and Technology Branch at the Army Research Laboratory (ARL) requires a quantity of 20 Silicon Carbide (SiC) substrates for growth of Silicon Carbide devices. Specifically, the 20 Silicon Carbide substrates will be used for optoelectronics, and technology development. The contractor shall provide 20 Silicon Carbide substrates that includes the following minimum specifications of the Government:
· The waver shall be 150 millimeters (mm) diameter silicon carbide (SiC) wafers
· The wafer shall be 47.5 mm flat
· The wafer shall be 350 micrometers plus or minus (+/-) 50 micrometers thick.
· Shall have a four (4) degrees (°) off-cut
· Shall be nitrogen doped (N+)
· Shall be double-side polished
· Silicon (Si-face Epi-Ready), Epi-Ready the surface is in a condition such the monocrystalline Epi layer can be successfully grown on it. The surface roughness is in the order of 1 nanometer (nm) and the surface is free of dust particles and metal contamination.
· The wafer shall be 4H-polytype
· Basal Plane Dislocation (BPD) densities below 3000 per square centimeter (<3000 cm^-3) for epitaxial growth of 4H-SiC. This lower BPD density will improve the devices grown on these wafers, which will assist in our overall research.
· Shall have Threading Edge Dislocations (TED) below 3000 per square centimeter for epitaxial growth of 4H-SiC
· Total usable surface area of the wafer- Quantitative by automated optical surface inspection and 2mm x 2mm site map greater than (>) 90 percent (%).
Delivery address:
US ARMY RESEARCH LABORATORY
SHIPPING & RECEIVING
ATTN BRENDA VANMIL
2800 POWDER MILL RD
ADELPHI MD 20783-1138
301-394-0979
Delivery should be no later than three months after the award.
C. Responses:
All interested parties should notify this office via e-mail within the posted date. Responses shall include:
(I) To what extent each of the specifications can be met.
(II) Include your type of business (i.e. commercial, academia), whether your organization is classified as a large or small business based on the 1250 employee size standard that accompanies NAICS code 334413. If a small business, you must also list any small disadvantaged status you hold [HUBZone, 8(a), Service Disabled Veteran Owned Small Business (SDVOSB), Women Owned Small Business (WOSB), Economically Disadvantaged Women-Owned Small Business (EDWOSB), etc.].
(III) Past experience/ performance through the description of completed projects.
(12) Responses to this sources sought are due no later than 12pm eastern standard time five (5) days after date of posting. Submissions should be emailed to David Erb at david.j.erb4.civ@army.mil.
Questions concerning this sources sought may be directed to David Erb, Contract Specialist, david.j.erb4.civ@army.mil or 301-394-2895. Please be advised that .zip and .exe files cannot be accepted.
(13) Place of Contract Performance: DEVCOM Army Research Laboratory, 2800 Powder Mill Rd, Adelphi, MD 20783
(14) Estimated Delivery Timeframe or Period of Performance: Three (3) months after contract award (ACA)
Last updated 2/13/2017
File details come from the government source that posted it. Updated .