Homoepitaxially grown N-type and P-type 4H-SiC on Semi-Insulated 4H-SiC substrates

NASA's National Shared Services Center (NSSC) has issued a Special Notice for procuring homoepitaxially grown N-type and P-type 4H-SiC on Semi-Insulated 4H-SiC substrates. The procurement is specifically targeted as a sole source contract to MSE Supplies LLC, located in Tucson, Arizona, under the authority of Federal Acquisition Regulation (FAR) 13.106-1(b)(1)(i). NASA has determined that MSE Supplies LLC is the sole provider of these specialized semiconductor materials. The performance of this contract will be located at NASA's Glenn Research Center, and the agency intends to acquire these commercial items using provisions outlined in FAR Part 12 and Part 13. The contract falls under the NAICS Code 334413 for Semiconductor and Related Device Manufacturing.

Interested organizations have until 3:00 p.m. Central Standard Time on November 29, 2024, to submit their capabilities and qualifications in writing. The government will evaluate these submissions solely to determine whether to conduct the procurement on a competitive basis, with the discretion to decide against full and open competition. The specific requirement is for two 6-inch 4H-SiC wafers: one n-type and one p-type, with precise technical specifications including epitaxial layer thickness, doping levels, and resistivity. Contractors must be prepared to meet detailed technical requirements, such as double-side polishing and Chemical Mechanical Polishing. Oral communications are not acceptable in response to this notice, and NASA has designated an Ombudsman for the acquisition who can be contacted through the provided web link. The contract aims to procure specialized semiconductor materials with specific performance and manufacturing criteria.