SATPC0037067 Tab 04 4 Spec Sheet.pdf
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- Solicitation number
- 80NSSC25889101Q
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This is a technical specification document for 4H-SiC (Silicon Carbide) wafers with epitaxially grown layers. The document details requirements for two types of production-grade 6-inch wafers, both V-doped and semi-insulating with 150mm diameter, 500μm thickness, and 4° off-axis orientation. The first wafer requires n-type epitaxial layer with >1E19 cm-3 doping and 3μm thickness, while the second requires p-type epitaxial layer with >1E20 cm-3 doping and 3μm thickness. Both wafers require X-Ray Diffraction (XRD) testing and one piece of each type will be used for Secondary Ion Mass Spectrometry (SIMS) measurement.
The quantity required is one piece of each type (total of 2 wafers), and delivery must be completed within 20 weeks from receipt of the Purchase Order (PO). The wafers must be double-side polished (DSP) with Chemical Mechanical Polishing (CMP) on the Si face. The resistivity specification for both wafer types is >1E5 Ω-cm2.
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Specification for 4H‐SiC with epitaxially grown Layers
The SiC wafers shall have the following specifications.
6” 4H‐SiC, V‐doped Semi‐Insulating, 150 mm dia, thickness prefer 500um, 4° off‐axis, >1E5 Ω‐ cm2, DSP, Si face CMP, w/ epi: Epi 1: n‐type, >1E19 cm‐3, thickness 3μm. XRD on all wafers, 1pc will be used for SIMS measurement, Qty: 1 pc. Production Grade.
6” 4H‐SiC, V‐doped Semi‐Insulating, 150 mm diameter, thickness 500um, 4° off‐axis, >1E5 Ω‐ cm2, DSP, Si face CMP, w/ epi: Epi 1: p‐type, >1E20 cm‐3, thickness 3μm. XRD on all wafers. 1pc will be used for SIMS measurement, Qty: 1 pc. Production Grade.
Delivery to be no later than 20 weeks from date of receipt of PO.
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