Dopant Selective Deep Reactive Ion Etching of 4H-SiC Wafer

Closed Special Notice Posted

Solicitation number
80NSSC27946811Q
Agency
Responses due
Set-aside
No set-aside

Opportunity facts

Place of performance
Cleveland, Ohio 44135, United States

Notice details come from SAM.gov. Updated .

About this opportunity

NASA's National Space Science Center issued a sources sought announcement on October 13, 2026 for Dopant Selective Deep Reactive Ion Etching of 4H-SiC Wafer services, with capability statements due by 4:00 p.m. Central Standard Time on October 16, 2026. NASA currently intends to award a sole source contract under FAR 12.102(a), having determined that BIOTRONICS INC is the sole capable provider, but will evaluate capability statements to determine whether to conduct the procurement competitively instead.

The requirement involves fabricating two 4-inch diameter silicon carbide wafers, each approximately 350 microns thick, using dopant-selective reactive-ion etching methodology. Pre-electroplated wafers with patterned nickel etch masks will be provided. The etching must reach 320 microns depth to create 30-micron thick diaphragms with radii from 300 to 900 microns, meeting quality specifications including 5% thickness uniformity, fewer than 5 micro mask artifacts per surface, smooth sidewalls free of scallops, minimum aspect ratio of 5, and no edge-wall trenching artifacts or notching at diaphragm base intersections.

Interested vendors must submit written capability statements only—quotes will not be evaluated—to Lindsey McLellan at lindsey.m.mclellan@nasa.gov, referencing the Notice ID. Performance is located at NASA Glenn Research Center. The procurement uses NAICS 334413 and FAR Part 12 procedures for commercial items.

Notice text

NASA/NSSC has a requirement for Dopant Selective Deep Reactive Ion Etching of 4H-SiC Wafer. See attached SOW for full details of the requirement. 

VENDORS MUST REFERENCE THE NOTICE ID WHEN SUBMITTING A CAPABILITY STATEMENT.

NOTE: Quotes received in response to this notice will NOT be considered and will not be evaluated by
NASA’s Technical End User Team. We are currently only requesting Capability Statements.

Files

File Type Posted
SATPC0043009 Tab 07 Capability Statement.pdf PDF
SATPC0043009 TAB 04 4 SOW.pdf PDF

Similar open opportunities

Opportunity Agency Set-aside Responses due
Custom semiconductor particle detectors Greenbelt, Maryland 20771, United States · NAICS 334413 Shared Services Center No set-aside
Purchase 150 mm diameter SiC wafers with epitaxial layers for p-templates for IGBTs Washington, District of Columbia 20375, United States · NAICS 334413 Office of Naval Research No set-aside
ATI alloy sheet United States · NAICS 331491 Shared Services Center No set-aside

On GovTribe

Work this opportunity

  • Track it in your pipeline
  • Find teaming partners
  • Similar opportunities
  • Ask GovTribe AI about this opportunity