SATPC0043009 TAB 04 4 SOW.pdf
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- Solicitation number
- 80NSSC27946811Q
About this file
This is a Statement of Work for deep reactive ion etching services on single crystal 4H-SiC semiconductor wafers. The contractor shall fabricate two 4-inch diameter wafers, each approximately 350 microns thick, using SiC Dopant Selective Reactive-Ion Etching methodology. The wafers will arrive pre-electroplated with patterned nickel etch masks to facilitate the etching process.
The technical requirements specify etching to a depth of 320 microns to create 30-micron thick diaphragms with radii ranging from 300 to 900 microns. Quality specifications include diaphragm thickness uniformity of ±5% across the 4-inch wafer, fewer than 5 micro mask artifacts per etched surface, smooth sidewalls free of scallops, and a minimum aspect ratio of 5 (with higher ratios preferred). The intersection of the diaphragm base and sidewall must have a reasonable radius without notching, and edge-wall trenching artifacts at this intersection are not acceptable. The etch recipe for semi-insulating SiC to n-type SiC selectivity shall be determined by either the foundry or customer.
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Other files
| File | Type | Posted |
|---|---|---|
| SATPC0043009 Tab 07 Capability Statement.pdf |
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Statement of work
Deep Reactive Ion Etching of Single Crystal 4H-SiC
• There is the need to fabricate two 4” and approximately 350 microns thick single crystal
4H-SiC wafer. Wafer is already electroplated with patterned nickel etch mask to facilitate the etching process.
• Using method of SiC Dopant Selective Reactive-Ion Etching, shall etch to the depth of
320 microns to create 30-micron thick diaphragms.
• Diaphragm radii range from 300 microns to 900 microns.
• Reasonable effort shall be made to obtain a smooth diaphragm with fewer than 5 micro mask artifacts on each etched diaphragm surface.
• The diaphragm thickness uniformity across the 4” wafer shall be ±5% of the 30-micron thickness.
• The etched diaphragm sidewall shall be smooth and free of “scallops.”
• The intersection of the diaphragm base with the sidewall shall have a reasonable radius but shall not be notched.
• Edge-wall trenching artifacts at the intersection of the diaphragm base and the sidewall shall not be accepted.
• The aspect ratio (etched depth/etched width) shall be no less than 5. Higher aspect ratio will be preferred.
• The etch recipe for semi insulating SiC/n-type etch SiC selectivity shall be determined by the foundry or customer.
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