Deep Reactive Ion Etching of Single Crystal 4H-SiC

Closed Special Notice Posted

Solicitation number
80NSSC26921522Q
Agency
Responses due
Set-aside
No set-aside

Opportunity facts

Place of performance
United States

Notice details come from SAM.gov. Updated .

About this opportunity

NASA's National Aeronautics and Space Administration Shared Services Center (NASA/NSSC) has issued a Special Notice on December 18, 2025, announcing its intention to award a sole source contract for Deep Reactive Ion Etching of Single Crystal 4H-SiC. The government has determined that BIOTRONICS, INC, located in North Olmsted, Ohio, is the sole provider capable of performing this specialized service. The procurement will be executed under the authority of FAR 13.106-1(b)(1)(i) and will utilize the provisions and procedures prescribed in FAR Parts 12 and 13 for the acquisition of commercial items and services. Performance of the contract will occur at NASA Glenn Research Center (GRC). The NAICS classification for this procurement is 334513 (Instruments and Related Products Manufacturing for Measuring, Displaying, and Controlling Industrial Process Variables).

The primary objective of this Special Notice is to solicit written submissions from interested organizations regarding their capabilities and qualifications to perform Deep Reactive Ion Etching of Single Crystal 4H-SiC, with such responses evaluated solely to determine whether the government should conduct this procurement on a competitive basis rather than as a sole source award. Interested parties must submit their capabilities and qualifications in writing by December 22, 2025, at 4:00 p.m. Central Standard Time to Laura Quave, the primary point of contact, at laura.a.quave@nasa.gov or 228-813-6420. The Statement of Work specifies requirements for etching a 4-inch, single crystal 4H-SiC wafer that is approximately 350 microns thick and electroplated with a patterned nickel etch mask, with critical specifications including maintaining diaphragm thickness uniformity within 5% and achieving an aspect ratio of at least 5. There are no set-asides for this procurement, and oral communications are not acceptable in response to this notice. The government's final determination regarding competitive versus sole source procurement remains solely within its discretion.

Notice text

Synopsis:

NASA/NSSC has a requirement for Deep Reactive Ion Etching of Single Crystal 4H-SiC. 

NASA/NSSC intends to issue a sole source contract to BIOTRONICS, INC 24831 Lorain RD STE 203 North Olmsted, Ohio 44070-2082 United States under the authority of FAR 13.106-1(b)(1)(i). It has been determined that BIOTRONICS, INC is the sole provider of Deep Reactive Ion Etching of Single Crystal 4H-SiC.

NASA/NSSC will be the procuring center for this effort.  Performance will be located at NASA/ Glenn Research Center (GRC).

The Government intends to acquire commercial items and services using the provisions, clauses and procedures prescribed in FAR Part 12 and FAR Part 13.

The NAICS Code for this procurement is 334513.

Interested organizations may submit their capabilities and qualifications to perform the effort in writing to the identified point of contact not later than 4:00 p.m. Central Standard Time on 12/22/2025. Such capabilities/qualifications will be evaluated solely for the purpose of determining whether or not to conduct this procurement on a competitive basis. A determination by the Government not to compete this proposed effort on a full and open competition basis, based upon responses to this notice, is solely within the discretion of the government.

Oral communications are not acceptable in response to this notice.

NASA Clause 1852.215-84, Ombudsman, is applicable. The Center Ombudsman for this acquisition can be found at http://prod.nais.nasa.gov/pub/pub_library/Omb.html .

Primary Point of Contact:

Laura Quave

Procurement Specialist

laura.a.quave@nasa.gov

228-813-6420

Files

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