SATPC0040115 Tab 04 4 SOW.pdf
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- Solicitation number
- 80NSSC26921522Q
About this file
This Statement of Work (SOW) details specifications for Deep Reactive Ion Etching of a single crystal 4H-SiC wafer. The requirements include fabricating a 4-inch wafer approximately 350 microns thick, which is already electroplated with a patterned nickel etch mask. The wafer must be etched to 300 microns, creating a diaphragm with a 50-micron thickness, with diaphragm radii ranging from 300 to 900 microns.
Critical technical specifications include: maintaining diaphragm thickness uniformity within ±5% across the wafer, ensuring smooth sidewalls free of "scallops," minimizing mask artifacts (fewer than 5 per surface), avoiding notching at the diaphragm base, and achieving an aspect ratio of at least 5. The etch recipe will be determined by the foundry. The document also includes two AI-related verbiage requirements: one mandating disclosure of AI technology use during contract performance, and another providing additional requirements for acquiring covered AI systems or services.
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Other files
| File | Type | Posted |
|---|---|---|
| SATPC0040115 Tab 07 Capability Statement Commercial.pdf |
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Statement of work
Deep Reactive Ion Etching of Single Crystal 4H-SiC
• There is the need to fabricate one 4” and approximately 350 microns thick single crystal 4H-SiC wafer. Wafer is already electroplated with patterned nickel etch mask to facilitate the etching process.
• Wafer shall be etched to 300 microns to a diaphragm having approximate thickness of 50 microns.
• Diaphragm radii range from 300 microns to 900 microns.
• Reasonable effort shall be made to obtain a smooth diaphragm with fewer than 5 micro mask artifacts on each etched diaphragm surface.
• The diaphragm thickness uniformity across the 4” wafer shall be ±5% of the 50-micron thickness.
• The etched diaphragm sidewall shall be smooth and free of “scallops.”
• The intersection of the diaphragm base with the sidewall shall have a reasonable radius but shall not be notched.
• Edge-wall trenching artifacts at the intersection of the diaphragm base and the sidewall shall not be accepted.
• The aspect ratio (etched depth/etched width) shall be no less than 5. Higher aspect ratio will be preferred.
• The etch recipe shall be determined by the foundry.
AI VERBIAGE:
1) Use of Artificial Intelligence (AI) During Contract Performance (SEP 2025) which requires contractors to disclose the use of AI technologies at any time during the fulfillment of the contract. This requirement statement must be included in all contracts (including orders); and
2) Artificial Intelligence (AI) Acquisitions (SEP 2025) which provides additional contractor requirements when the contract is acquiring covered AI systems or services as defined by OMB memo M-25-22. This requirement statement must be included in all contracts (including orders) when acquiring covered AI systems or services. Covered AI systems or services and exceptions are listed below as defined OMB memo M-25-22).
File details come from the government source that posted it. Updated .