Deep Reactive Ion Etching of Single Crystal 4H-SiC
Closed Solicitation Posted
- Solicitation number
- 80NSSC24867518Q
- Agency
-
Shared Services Center
National Aeronautics and Space Administration
- Responses due
- Set-aside
- Total Small Business
Opportunity facts
- NAICS code
- 334519 Other Measuring and Controlling Device Manufacturing
- Points of contact
Notice details come from SAM.gov. Updated .
About this opportunity
The National Aeronautics and Space Administration (NASA) Shared Services Center has issued a Request for Quote (RFQ) for the Deep Reactive Ion Etching of Single Crystal 4H-SiC. The scope of work requires the fabrication of three 4-inch single crystal 4H-SiC wafers, each etched to a thickness of 300 microns with a 50-micron thick diaphragm and a diameter ranging from 300 to 900 microns. Key requirements include a smooth diaphragm surface, 5% thickness uniformity, smooth sidewalls, and an aspect ratio of at least 5. The evaluation will be based on the lowest price technically acceptable offer.
This procurement is set aside for small businesses under NAICS code 334519. The RFQ includes provisions on required representations and certifications, such as prohibitions on certain telecommunications equipment and services. Quotes are due by April 26, 2024 at 2:00 pm CT. There is no information provided on potential incumbents or award values.
Notice text
Please see attached SOW and RFQ.
Files
| File | Type | Posted |
|---|---|---|
| SATPC0034809 Tab 10 1 RFQ.pdf | ||
| SATPC0034809 Tab 04 4 SOW.pdf |
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