SATPC0034809 Tab 04 4 SOW.pdf
PDF 145 KB Posted
- Attached to
- Deep Reactive Ion Etching of Single Crystal 4H-SiC Federal contract opportunity
- Solicitation number
- 80NSSC24867518Q
About this file
The provided document is a Statement of Work (SOW) for a federal contract opportunity to fabricate three 4-inch single crystal 4H-SiC wafers. The contractor shall etch each wafer to a thickness of 300 microns, creating a 50-micron thick diaphragm with a diameter ranging from 300 to 900 microns. The SOW outlines specific requirements, including a smooth diaphragm surface with fewer than 5 micro mask artifacts, 5% thickness uniformity, smooth sidewalls without "scallops," and an aspect ratio (depth/width) of at least 5. The etch recipe is to be determined by the foundry. This SOW is related to Solicitation Number 80NSSC24867518Q, a Request for Quote (RFQ) issued by the National Aeronautics and Space Administration Shared Services Center for the Deep Reactive Ion Etching of Single Crystal 4H-SiC.
View the file
Other files for this federal contract opportunity
| File | Type | Posted |
|---|---|---|
| SATPC0034809 Tab 10 1 RFQ.pdf |
On GovTribe
Work with this file on GovTribe
- Download the original file
- Contacts named in this file
- Similar government files
- Ask GovTribe AI about this file
Text version
Statement of work
Deep Reactive Ion Etching of Single Crystal 4H-SiC
• Contractor shall fabricate three 4” and approximately 350 microns thick single crystal 4H-SiC wafers. Each wafer is already electroplated with patterned nickel etch mask to facilitate the etching process.
• Each wafer shall be etched to 300 microns to a diaphragm having approximate thickness of 50 microns.
• Diaphragm radii range from 300 microns to 900 microns.
• Reasonable effort shall be made to obtain a smooth diaphragm with fewer than 5 micro mask artifacts on each etched diaphragm surface.
• The diaphragm thickness uniformity across the 4” wafer shall be ±5% of the 50-micron thickness.
• The etched diaphragm sidewall shall be smooth and free of “scallops.”
• The intersection of the diaphragm base with the sidewall shall have a reasonable radius but shall not be notched.
• Edge-wall trenching artifacts at the intersection of the diaphragm base and the sidewall shall not be accepted.
• The aspect ratio (etched depth/etched width) shall be no less than 5. Higher aspect ratio will be preferred.
• The etch recipe shall be determined by the foundry.
File details come from the government source that posted it. Updated .