SOO 25-5A3 - DMEA Building 2 Assessment.pdf
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- Solicitation number
- HQ072725RRC01
- Issued by
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Defense Microelectronics Activity
About this file
This Statement of Objectives (SOO) outlines DMEA's requirements for a comprehensive assessment of their Building 2 cleanroom space to support Silicon Carbide (SiC) semiconductor manufacturing capabilities. The primary objective is to evaluate the current state, determine facility improvement costs, operations and maintenance costs, and project timelines needed to bring approximately 20,000 sq.ft of idle cleanroom space to operational status for thick epitaxial film production (>150µm) on 4H-SiC substrates.
The assessment must analyze existing utilities and manufacturing infrastructure including electrical systems, exhaust systems, bulk gases, cooling systems, and waste management systems. Specific equipment requirements include an Axcelis Purion XE high-temperature ion implanter, ASM/PE106 epitaxy reactors, and various measurement tools (KLA Candela 8520, Semilabs CnCV230, Semilabs IR2200N) to support a production capacity of <2000 thick epitaxial SiC wafers per year. The contractor must provide detailed cost estimates for support systems, point abatement systems, installation, and ensure compliance with ISO Class 3 cleanroom standards and all applicable environmental regulations. Weekly Technical Interface Meetings (TIMs) are required, and the final assessment report must be submitted 10 calendar days before the end of the period of performance.
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Statement of Objectives (SOO) 25-5A3
DMEA
12 December 2024 Project Engineer: David Flowers, Chief Science Officer, DMEA/ME, (916) 231-1623
1.0 SCOPE:
1.1 TITLE: DMEA Building 2: Assessment of Manufacturing (Cleanroom) Space
1.2 APPPLICABILITY: Semiconductor Manufacturing, Facility Assessment, Capability Enhancement.
1.3 BACKGROUND: The fundamental electrical properties of Silicon Carbide (SiC) make the material attractive for utilization in both current and emergent DoD applications. This is because SiC devices have the intrinsic capability to operate at higher temperatures, higher voltages, higher power densities, and higher frequencies than their silicon-based counterparts. These characteristics provide substantive benefit in DoD applications, including reduction in Size, Weight, and Power (SWaP), and enhanced survivability and reliability in harsh extrinsic environments.
To maximize the benefit of SiC technology in DoD applications, it is necessary to produce thick epitaxial films (>150µm) on 4H-SiC substrates, as this is a prerequisite for the fabrication of high voltage (>10kV) discrete components. These devices are leveraged in a host of DoD applications that require high efficiency power conversion.
Thick Growth SiC epitaxy is a low TRL emergent technology in the commercial sector due to the lack of demand for ultra-high voltage components. Commercial demand is projected to manifest over the next 7-10 years, However, DoD demand for ultra-high voltage components, relevant to the aforementioned applications requires immediate instantiation of thick-growth epitaxy capability to produce devices at a scale sufficient to meet DoD mission requirements. DMEA is uniquely positioned to meet DoD demand by bringing online approximately 20,000 sq.ft of currently idle, newly constructed cleanroom space that can support epitaxial growth equipment, and other key manufacturing processes.
1.4 PURPOSE: The purpose of this effort is for DMEA/DoD to obtain a comprehensive, accurate assessment of the current state, total facility improvement costs, Operations and Maintenance(O&M) costs, and projected timelines necessary to bring the existing DMEA Building 2 cleanroom space to operational status in accordance with the requirements stipulated in Section 3.0 of this document. In addition to hard facility improvement costs (labor, materials), the assessment shall include costs and schedule impacts associated with acquisition of any required permits (construction and equipment operation), and compliance with all applicable regulations governing the proposed modifications/improvements and sustained operation of the instantiated capability in the DMEA semiconductor fabrication facility.
1.5 UTILITIES AND MANUFACTURING INFRASTRUCTURE: The following tables describe the current status of the utilities and manufacturing infrastructure that exist at the DMEA facility, or those that DMEA believes are required to instantiate or support the capabilities described in section 3.0 of this document.
Current Status Future Requirement
UTILITY
TYPE
UTILIT
Y
NAME
UTILITY
DESCRIPTION
Elec./Gas/Exha ust/Water Line in Building
Elec./Gas/Exha ust/Water Supply Availability
Elec./Gas/Exha ust/Water Line in Building
Elec./Gas/Exha ust/WaterSuppl y System Unit
Electrical 120V
1PH
120 Volt, 1 Phase
Designed, Installed
Installed Required Sufficient
208V
1PH
208 Volt, 1 Phase
Designed, Installed
Installed Required Sufficient
208V
3PH
208 Volt, 3 Phase
Designed, Installed
Installed Required Sufficient
480V
3PH
480 Volt, 3 Phase
Designed, Installed
Installed Required Sufficient
Exhaust AEX Acid Exhaust Designed, Installed
Installed Required Sufficient
AMEX Ammonia Exhaust
Designed, Installed
Installed Required Sufficient
GEX General Exhaust Designed, Installed
Installed Required Sufficient
VOCEX Volatile Organic Compound Exhaust
Designed, Installed
Installed Required Sufficient
Bulk Gas H2 Hydrogen Designed, Installed
Not Available Required Need: Design, Install
HPN2 High Purity Nitrogen
Designed, Installed
Not Available Required Need: Design, Install
GN2 General Nitrogen
Designed, Installed
Not Available Required Need: Design, Install
O2 Oxygen Designed, Installed
Not Available Required Need: Design, Install
He Helium Designed, Installed
Not Available Required Need: Design, Install
Ar Argon Designed, Installed
Not Available Required Need: Design, Install
Natural Gas Natural Gas
PG&E /
Abatement
Not Designed Not Available Required Need: Design, Install
Air CDA Clean Dry Air Designed, Installed
Installed Required Sufficient
Vacuum PV Process Vacuum Designed, Installed
Installed Required Sufficient
Cooling PCWR Process Cooling Water Return
Designed, Installed
Installed Required Sufficient
PCWS Process Cooling Water Supply
Designed, Installed
Installed Required Sufficient
Water UPWS Ultra Pure Water Supply
Designed, Installed
Not Available Required Need: Design, Install
ROP RO Product Water
Designed, Installed
Not Available Required Need: Design, Install
Drains AMW Ammonia Waste Designed, Installed
Installed -
WNS
Required Installed -
WNS
AW Acid Waste Designed, Installed
Installed -
WNS
Required Installed -
WNS
BOE-
Drain
BOE Drain Designed, Installed
Installed - Carboy
Required Installed - Carboy
DRW Deionized Recycled Water
Designed, Installed
Not Available Required Need: Design, Install
HFW Hydrofluoric Acid Waste
Designed, Installed
Installed -
WNS
Required Installed -
WNS
SW Solvent Waste Designed, Installed
Installed - Carboy
Required Installed - Carboy
Current Status Future Target Comment RO Water plant N/A but
Required Need: Design, Install
DI Water filtration N/A but Required
Need: Design, Install Need Temperature control
Building Automation System Update
Exist Need: Update & Verification
Gas Monitoring System Update
Gas Delivery Bunker N/A but Required
Need: Design, Install
Gas Cabinets N/A but Required
Need: Design, Install
Chemical Doghouse (Solvent, Acid, Base)
N/A but Required
Need: Design, Install
Chiller Exist Need: N+1 (to be sufficient)
Cooling Tower Exist Need: N+1 (to be
UPS Exist Need: N+1 (to be
Backup Generator Exist Need: N+1 (to be
Boiler Exist Need: N+1 (to be
Heat Exchangers Exist Need: N+1 (to be
H2 Generator N/A but Required
Need: Design, Install
H2 Purifier N/A but Required
Need: Design, Install Hydrogen gas 6N purity
N2 Generator N/A but Required
Need: Design, Install General N2 For pumps. High purity 5N Nitrogen for process can use existing
N2 Purifier N/A but Required
Need: Design, Install
Argon Dewar N/A but Required
Need: Design, Install Argon Source
Argon Purifier N/A but Required
Need: Design, Install Argon gas 6N purity
CH4 Purifier N/A but Required
Need: Design, Install Methane gas 5N purity
Waste Neutralize System (Chemical)
Air Handler Exist Need: Update &
Cleanroom Communication Network
Exist Need: Update &
Phone, PA, Network
*Infrastructure required for future capability expansion. Include in future capability portion of assessment product.
See Section 3.4.1 of this document.
**For the initial capability described in Section 3.0 of this document, only chemicals relevant to removing SiC deposits and tool maintenance are required. Include listed in future portion of assessment product.
2.0 APPLICABLE GOVERNMENT DIRECTIVES, INFORMATION, AND ACCESS:
2.0.1 DMEA PL 03-01 Foreign National Policy
2.0.2 DMEA PL 11-02 DMEA Facility Access Policy
2.1 GOVERNMENT FURNISHED PROPERTY: None
2.2 GOVERNMENT FURNISHED INFORMATION: DMEA hosted a Q&A session with contractors attending the site visit. DMEA technical and contracting POCs will be available to answer facility, contracting, and technical questions relevant to this effort as part of the proposed Technical Interchange Meetings (TIMs) described in section 3.22 of this document.
Description Date/Version Date Available DMEA “As Built” Drawings for Building 2 Cleanroom Space Current Version Upon contract award Virtual Individual Contractor Q&A Responses RFI Posting + ~25
Days DMEA Developed Proposed Process Equipment List (Low detail version) Current Version RFI Posting
2.3 GOVERNMENT FURNISHED FACILITIES/ACCESS: DMEA hosted a contractor walk-through of DMEA Building 2 approximately 3 weeks after the RFI relevant to this proposal was posted. Additional facility access relevant to the performance of this proposal will be at the sole discretion of the DMEA Directorate. If facility access is granted, participants will need to provide proof of U.S citizenship to the DMEA security office one week prior to the proposed date of the walk- through.
3.0 REQUIREMENTS:
3.1 GENERAL REQUIREMENTS:
3.1.1 NOTIFICATION OF RIGHTS: The Contractor shall identify and receive written government approval from the Procuring Contracting Officer (PCO) prior to committing to the use of any privately developed items, components, processes, computer software, and/or technical data which they:
a. Intend to deliver with Limited Rights
b. Intend to deliver with Government Purpose Rights
c. Intend to deliver with Restricted Rights
d. Have not yet determined if such rights should apply
3.2 PROGRAM MANAGEMENT
3.2.1 CONTRACTOR STATUS REPORT/TASK ORDER MANAGEMENT: The contractor shall perform administrative, technical and management functions during the course of this task order and shall report the status of their effort towards achieving the task order objectives, including primary technical activities and efforts, problems/deficiencies, impacts, and recommended solutions. The final product of the task order is a comprehensive assessment, as outlined in sections 1.4 and 3.0 of this document. (A001, MSR)
3.2.2 TECHNICAL INTERFACE MEETINGS (TIMs): The contractor shall conduct weekly TIMs with designated DMEA technical/approval staff in which progress and issues are discussed and feedback is provided. The contractor shall discuss completion to date or advise of upcoming dates at risk of not being met. Additional TIMs with the contractor shall be scheduled when there is need for technical interchange between the government and the contractor. The content of the meeting can include the discussion of any information that has impact upon the task activities, including documentation contents or format. The contractor shall capture and maintain meeting minutes for each meeting. (A002, TIM minutes)
3.3 GENERAL BUILDING 2 CLEANROOM SPACE REQUIREMENTS: All contractor proposed facility modifications or improvements, capability enhancements, and equipment installations included in the assessment shall meet the following general requirements, as applicable.
a. Compliance with ISO Class 3 cleanroom standard
b. Environmental control standards for standard cleanroom operation (temperature, humidity)
c. Target technology: Wide bandgap power (High voltage Silicon and Silicon Carbide)
d. Compliance with the purity requirements for the target technologies/technology nodes described in 3.3.c
e. Compliance with all environmental and local government regulations (gas, waste, water, abatement, reclamation, etc.)
f. Compliance with the N+1 concept for key systems/infrastructure to maintain continuity of operation (N= required unit, N+1= redundant unit)
3.4 TECHNICAL OBJECTIVES
3.4.1 ASSESSMENT SCOPE: Contractor shall follow best practices, processes and procedures in the development of a comprehensive assessment that includes cost estimates for facility improvements (labor and materials), equipment and equipment installation, projected implementation and procurement timelines, and projected operations and maintenance costs. relevant to the instantiation of the following initial capabilities in the DMEA Building 2 cleanroom space.
a. Silicon Carbide (SiC) epitaxy (P-doped and N-doped)
b. High temperature ion implantation (Aluminum)
The final assessment product shall include a baseline assessment of the DMEA Building 2 infrastructure, noting any deficiencies or inoperable systems that would impact instantiation or sustainment of the proposed capabilities. The baseline assessment shall include estimates for remediation of any noted deficiencies. Note that it may not be possible to fully test the existing Building 2 systems/infrastructure for the development of the final assessment product. A reasonable reserve amount to mitigate unquantified inoperable system risk shall be included in the final assessment product. (A003, Assessment Report)
The final assessment product shall include all costs, potential impacts, and timelines relevant to compliance with all State and County regulations and permitting requirements for any facility improvements or capability enhancement included in the assessment product.
The final assessment product shall include a high level implementation strategy for future capability expansion of the DMEA Building 2 cleanroom space to accommodate additional processing tools applicable to the technologies/technology nodes of interest outlined in Section 3.3 (c). The intent is to identify any facility improvements that may be implemented in conjunction with the capabilities described in section 3.4.1 (a and b) of this document that may facilitate future expansion. Potential areas of future expansion include addition of Chemical Mechanical Polishing (CMP) capability, addition of a precious metal line, and additional semiconductor manufacturing equipment to enable full flow SiC processing.
Contractor shall provide unambiguous estimates for all included costs. Cost estimates shall clearly differentiate labor costs and material costs.
Contractor shall follow DoD Regulations, Policies, Memo’s, etc. and applicable DMEA Policies, Plans, and Procedures for all applicable areas. If there is a conflict between the contractor activity and DoD/DMEA direction the contractor shall present to the COR for decision on path forward.
Contractor shall perform all work in compliance with all relevant DMEA/DoD security regulations.
3.4.2 PROCESS EQUIPMENT LIST: The following semiconductor manufacturing equipment list identifies the equipment DMEA has selected to instantiate the SiC growth epitaxy and high temperature implant capabilities in the
DMEA Building 2 cleanroom space. Note the list does not include support systems such as chillers, heat exchangers, etc.., that will be required for tool operation. Contractor shall identify and provide cost estimates for support systems, point abatement systems (where applicable), and installation of support systems in the final assessment product. Contractor shall present all proposed equipment substitutions to the DMEA technical staff for evaluation prior to their inclusion in the final assessment product. (A003, Assessment Report)
Project Tool Requirements Tool Option(s) Capabilities HV Device (Si & SiC)
High Temperature Ion Implanter
Axcelis Purion XE Need High Temp. Ion Implanter (Aluminum)
HV Device (SiC)
Epi Reactor #1 (P-doped)
ASM/ PE106 #1 P-doped SiC Epitaxy
HV Device (SiC)
Epi Reactor #1 (N-doped)
ASM/ PE106 #1 N-doped SiC Epitaxy
HV Device (SiC)
Epi Defect Measurement
KLA Candela 8520 SiC Epi defect inspection and classification
HV Device (SiC)
CV Measurement Semilabs CnCV230 SiC Epi doping concentration measurement and capacitance voltage
HV Device (SiC)
Epi Thickness Measurement
Semilabs IR2200N SiC Epi film thickness measurement
General Microscope Olympus MX66L/ AL120 Wafer Inspection
3.4.3 ANTICIPATED WAFER CAPACITY/THROUGHPUT: For the purposes outlined in this document, assume that wafer throughput associated with the DMEA Building 2 cleanroom space will be <2000 thick epitaxial SiC wafers/year.
3.4.4 ACCEPTANCE CRITERIA: The final assessment product will be evaluated by the DMEA technical staff using the following general criteria prior to formal acceptance:
a. Completeness: Ensuring conformance with the requirements stipulated in section 3.0 of this document.
Ensuring that any facility improvements included in the assessment consider all required utilities/systems (electrical, water, waste, etc.) and applicable regulatory compliance. Ensuring that timelines are reasonable and reflect potential impacts such as permit acquisition.
b. Accuracy: Ensuring cost estimates included in the final assessment product contain sufficient detail for independent validation, where possible, and validation of costs using internal data sources.
4.1 POINT OF CONTACT:
DMEA/ME
4234 54th Street McClellan, CA 95652-2100
David Flowers Chief Science Officer, DMEA/ME (916) 937-4962 david.h.flowers.civ@mail.mil
4.1 DATA ITEMS: The following CDRLs apply to this effort and shall be submitted as described below. Indicate on the cover of all delivered data the contract number, DMEA POC, and office symbol. CDRL Authorities can be found at: https://quicksearch.dla.mil/,
1. Sequence Number A001
2. Title Status Report
3. Subtitle Monthly Status Report
4. Authority DI-MGMT-80368A
5. Contract Reference Para. 3.2.1
6. Requiring Office DMEA
7. DD 250 Req LT
8. App Code N/A
9. Distribution Statement Req’d Distribution Statement F. Further distribution only as directed by
DMEA or higher authority; 28 OCT 2024.
10. Frequency Monthly
11. As of N/A
12. Date of First Submission 10th calendar day of first full calendar month is complete
13. Date of Subsequent Submission 10th calendar day of each month
14. Distribution See Section 4.1
15. Total See Section 4.1
16. Remarks Contractor format is acceptable.
1. Sequence Number A002
2. Title Meeting Minutes
3. Subtitle TIM Minutes
4. Authority DI-ADMN-81250B
5. Contract Reference Para. 3.2.2
6. Requiring Office DMEA
7. DD 250 Req LT
8. App Code N/A
9. Distribution Statement Req’d Distribution Statement F. Further distribution only as directed by
DMEA or higher authority; 28 OCT 2024.
10. Frequency ASREQ
11. As of N/A
12. Date of First Submission 10 calendar days after TIM
13. Date of Subsequent Submission N/A
14. Distribution See Section 4.1
15. Total See Section 4.1
16. Remarks Contractor format is acceptable. Include presentation materials in the
TIM minutes.
1. Sequence Number A003
2. Title Assessment Report
3. Subtitle Final Assessment Product
4. Authority DI-MISC-80508B
5. Contract Reference Para. 3.4.1, 3.4.2
6. Requiring Office DMEA
7. DD 250 Req DD
8. App Code A
9. Distribution Statement Req’d Distribution Statement F. Further distribution only as directed by
DMEA or higher authority; 28 OCT 2024.
10. Frequency One Time
11. As of 10 calendar days before period of performance end.
12. Date of First Submission N/A
13. Date of Subsequent Submission N/A
14. Distribution See Section 4.1
15. Total See Section 4.1
16. Remarks Contractor format is acceptable.
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