COMB SYNOPSIS_ SOLICITATION SB1341-10-RQ-0245 080210.pdf

RFQ SB1341-10-RQ-0245

CLASSIFICATION CODE: 66- Laboratory Equipment and Supplies

TITLE: RECOVERY- A SUITE OF EPITAXIAL MATERIALS DEPOSITION SYSTEMS

SOLICITATION NUMBER: SB1341-10-RQ-0245

RESPONSE DATE: 23 August 2010

CONTACT POINTS: Marie A. Gilliam, Contractor, Contract Specialist, (301) 975-6753 Patrick Staines, Contracting Officer, (301) 975-6335

DESCRIPTION:

RECOVERY: THIS ACQUISITION IS BEING FUNDED BY THE AMERICAN

RECOVERY AND REINVESTMENT ACT (ARRA) OF 2009.

RECOVERY - The National Institute of Standards and Technology (NIST) has a requirement for a Suite of Epitaxial Materials Deposition Systems to be operated at the Quantum Fabrication Facility, NIST, Boulder, CO.

THIS IS A COMBINED SYNOPSIS/SOLICITATION FOR COMMERCIAL ITEMS

PREPARED IN ACCORDANCE WITH THE FORMAT IN FAR SUBPART 12.6-

STREAMLINED PROCEDURES FOR EVALUATION AND SOLICITATION

FOR COMMERCIAL ITEMS-AS SUPPLEMENTED WITH ADDITIONAL INFORMATION

INCLUDED IN THIS NOTICE. THIS ANNOUNCEMENT CONSTITUTES THE ONLY

SOLICITATION; QUOTATIONS ARE BEING REQUESTED, AND A SEPARATE

WRITTEN SOLICITATION DOCUMENT WILL NOT BE ISSUED. THE SOLICITATION IS

BEING ISSUED USING SIMPLIFIED ACQUISITION PROCEDURES UNDER THE

AUTHORITY OF FAR 13.5 TEST PROGRAM FOR CERTAIN COMMERCIAL ITEMS.

This solicitation is a Request for Quotation (RFQ). The solicitation document and incorporated provisions and clauses are those in effect through Federal Acquisition Circular (FAC) 2005-44 (effective 8 July 2010).

1352.215-72 INQUIRIES (APR 2010)

Offerors must submit all questions concerning this solicitation in writing to Patrick Staines, Contracting Officer, with “cc” to Marie A. Gilliam, Support Contractor. Questions should be received no later than 10 calendar days after the issuance date of this solicitation. Any responses to questions will be made in writing, without identification of the questioner, and will be included in an amendment to the solicitation. Even if provided in other form, only the question responses included in the amendment to the solicitation will govern performance of the contract.

(End of provision)

The associated North American Industrial Classification System (NAICS) code for this procurement is 333295 with a small business size standard of 500 employees.

This acquisition is 100% set-aside for small business.

In accordance with the non-manufacturer rule, the contractor shall be a small business under the applicable size standard and shall provide either its own product or that of another domestic small business manufacturing or processing concern. See FAR 19.102(f) for additional information.

See Attachment 2, Bid Schedule, for submitting quotation(s) for items required.

STATEMENT OF WORK:

Introduction

The contractor shall furnish the necessary personnel, material, equipment, and services to fabricate, install and test a suite of epitaxial materials deposition systems.

Background

The suite of epitaxial materials deposition systems will be used for the development of superconducting devices, MEMS devices and magnetic devices at the National Institute of Standards and Technology (NIST), Boulder, CO. These multi-user deposition systems will be shared amongst several NIST Laboratories and Divisions. These varied user groups conduct research in the fields of Superconductivity, Magnetics and Optical Coatings. The deposition systems will provide several different techniques for the deposition of metal and insulating thin films critical to research projects at NIST.

Minimum Requirements

The system shall be a current year production model and not a prototype one-of-a-kind system.

Any substitutions of the major system components, such as software, power supplies, load-lock mechanisms, vacuum valves, gauges and pumping equipment, from the contractor’s normally used components, required to meet the specifications herein shall be clearly noted in the quotation.

The system shall meet or exceed the technical specifications identified below

Components The Suite of Thin Film Materials Deposition Systems consists of three separate vacuum systems as follows:

I) Electron Beam Evaporation System (E-Beam)

II) Magnetron Sputter Deposition System

II) Multi-Tool System including Sputter Deposition Sources with Materials Analysis capabilities to include:

i) Residual Gas Analysis,

ii) Low Pressure Rheed Analysis and

iii) In-situ Ellipsometry Analysis Equipment

System I (Item No. 0001) - Electron Beam Deposition system shall have:

1. General Specifications

a. Be a general purpose thin film metal deposition tool

b. The vacuum system shall have a six pocket electron gun to hold materials for evaporation, and also have a load lock for rapid wafer interchange.

c. Provide for computer automation of deposition steps using a recipe system.

d. Excluding the rough vacuum pump system, shall be Class 100 clean-room compatible, designed to sit entirely within a cleanroom. All clean-room equipment shall be housed entirely within a maximum footprint of 2 meters by 3 meters, including hook-ups to house facilities, such as gas line connections and vacuum lines, which will pass through the wall of the clean-room to the service chase.

e. The system shall utilize single point connections for any necessary house facilities (such as chilled water, compressed air, vent gas, process gas).

f. The system shall have an internal electrical distribution and require only a single electrical connection to 208V, 3-phase, 100 amp connection.

g. The system shall be equipped with an easily accessible emergency, red in color, mushroom-button shut-off switch. When activated, it safely turns off any ongoing process without damage to a sample in process during the shut-down procedure.

h. The system shall be equipped with a closed loop chiller to maintain substrate temperatures during deposition.

2. Deposition Chamber

a. The deposition chamber shall be fabricated from 304L stainless steel.

b. The process chamber surfaces shall have a set of internal, non-magnetic 304L stainless steel (SS) shields that are fixed to the side of the chamber but are easily removed to allow removal of excess deposited films, with a spare set of shields provided.

c. If the system has a top flange, then that flange shall be lifted from the chamber, when desired, via an electromechanical hoist.

d. Multiple CF ports shall be provided including a 6-inch view port, CF pumping port, roughing and N2 vent ports, vacuum gauges, and at least 2 general purpose 2.75-inch CF ports.

e. All CF chamber hardware shall be silver-plated bolts. The view port shall include a manual shutter.

f. The chamber shall be mounted to a support frame and include casters and leveling pads.

All electronics shall be mounted in a standard 19-inch wide x 36-inch deep electronic rack including the Power Distribution (PD) box, control systems, power supplies, etc.

3. Loadlock Assembly:

a. The load lock chamber shall be capable of handling wafer holders of 150mm wafers, 100mm wafers and 76.2mm (SEMI standard 3-inch wafer) wafers with less than a 3 mm edge exclusion region.

b. Shall be a vacuum chamber with a quick access door and view port to provide easy loading and unloading of the substrate holders.

c. The load lock chamber shall be pumped via a turbo pump with splinter screen. The loadlock turbo shall be isolated from the loadlock via an electro-pneumatic gate valve.

d. The turbo pump shall be backed by the dry pump used to evacuate the main chamber.

e. A set of two electro-pneumatic valves shall be provided for roughing out the loadlock and backing the turbo pump.

f. The loadlock shall include ion and Convectron gauges connected to suitable readout and display devices, along with an electro-pneumatic vent and over pressure relief valve.

g. This loadlock shall provide a pressure below 5 x 10-7 Torr. The loadlock chamber shall be isolated from the deposition chamber by a gate valve with a CF flange.

h. The system shall have either manual transport of the wafer from the load lock into the main chamber or proven, reliable automatic transfer system. The transport mechanism must be robust with no observed failures or wafer breakages.

i. The system shall have the loadlock valves are integrated into the software including auto pump/vent features with software controlled turbo pumping. The valves shall also be able to be opened/closed in a manual fashion and the software shall include interlocks that shall only allow valves to be opened/closed in a logical sequence.

4. Pumping and Gauging: The electron beam deposition chamber shall include:

a. A cryo pump (for compatibility with existing systems we prefer a UHV Helix Technology OnBoard-8) along with a suitable water cooled compressor. The cryo lines from the compressor shall be at least 10 feet. The cryo pump shall provide a pumping speed of 4,000 l/sec for water (the dominant background gas), 1,500 l/sec for air, and 1,200 l/sec for Ar.

b. A dry rough pump shall be used to evacuate the chamber and cryo pump.

c. A base pressure of 2 x 10-8 Torr shall be guaranteed for the deposition chamber. It is required that the chamber be He leak tested in the factory.

d. A throttle valve to limit pumping conductance.

e. A capacitance manometer to indicate 20-50mTorr pressures for rf sputter cleaning shall be included. There shall be included a shut-off valve to isolate it from atmosphere when the chamber is vented.

f. Two computer controlled mass flow control (MFC) units shall be supplied as follows:

Argon (100 sccm) and O2 (50 sccm). Each MFC valve shall include one electro-pneumatic shut off valve. All gas tubing shall be electro-polished 304SS and cleaned for oxygen service. Two electro-pneumatic valves shall be provided for roughing the chamber and the cryo-pump.

g. The system shall be able to control Argon gas pressure between 5mT to 20mT for the purpose of RF sputter cleaning.

h. An Ionization Gauge (Bayard Alpert Gauge) shall be used to measure the pressure in the main chamber. A wide range gauge shall monitor the chamber pressure from atmospheric pressure down to below 10-3 Torr. A second Convectron-type gauge shall monitor the fore line pressure of the dry pump.

5. Electron Beam Deposition Sources requirements:

a. A 6 pocket Evaporation Source with a minimum 10 cc crucible is required.

b. The system will be equipped with an electron gun with sufficient power to achieve deposition rate of Aluminum in acceptance criteria #4 at 10kV.

c. Electron gun with power supply with programmable sweep and automatic crucible indexing.

d. System will be capable of depositing thin films of the following materials: Al, Au, Ti, PdAu, Cr, Ge, Ni and Cu

e. Shall include a high voltage discharge hook.

f. Shall include pnuematically actuated source shutter with computer control.

g. Shall include all electrical and water feedthroughs and shielding.

6. RF bias-able, rotating platen, Substrate Stage

a. The rotation stage shall be compatible with substrate sizes up to 150mm (6-inch) diameter substrates. Two sets of substrate holders shall be provided to handle 150mm wafers, 100mm wafers and 75mm (SEMI standard 3-inch wafer) wafers with less than a 3 mm edge exclusion region.

b. The substrate rotation stage shall be computer controlled motor to provide substrate rotation speeds up to 30 RPM.

c. The substrate stage shall be designed such that the wafer temperature will not exceed 60 ºC during electron beam evaporation of Al for five minutes at a rate of 3 nm/sec. The system shall have a substrate cooling design using water cooling with the closed loop chiller Or other acceptable methods are air cooling of substrate or using large thermal mass cooling.

d. System shall include a single 100 Watt RF power supply with automatic matching network with a feed-through and for biasing the substrate, such that the substrate may be cleaned immediately before deposition in the main chamber.

e. System shall include a computer controlled pneumatically actuated substrate shutter.

7. Quartz Crystal Thickness Monitor:

A crystal thickness monitor shall be provided with an accuracy of +/- 2%.

System II (Item No. 0002) - Magnetron Sputter Deposition system described herein will contain three magnetron sputter sources that will be used for the development of superconducting, magnetic and optical devices. The system shall be a sputter-up configuration with sources in a con-focal arrangement. The system shall include a load-lock chamber and will have substrate surface cleaning capabilities on a rotating, water cooled main chamber sample stage. The system shall have an option for future controlled oxygen dosing in the load lock. The system shall provide for computer automation of deposition steps using a recipe system.

1. General Specifications

a. All equipment, excluding the rough vacuum pump system, shall be Class 100 clean-room compatible, designed to sit entirely within the cleanroom. All clean-room equipment shall be housed entirely within a maximum footprint shall be 2 meters by 3 meters. including hook-ups to house facilities, such as gas line connections and vacuum lines, which will pass through the wall of the cleanroom to the service chase.

b. The system shall utilize single point connections for any necessary house facilities (such as chilled water, compressed air, vent gas, process gas).

c. The system shall have an internal electrical distribution and require only a single electrical connection to 208V, 3-phase, 100 amp connection.

d. The system shall be equipped with an easily accessible emergency, red in color, mushroom-button shut-off switch. When activated, it safely turns off any ongoing process without damage to a sample in process during the shut-down procedure.

e. The system shall be equipped with a closed loop chiller to maintain substrate temperatures during deposition.

2. Deposition Chamber

a. The deposition chamber shall be fabricated from 304L stainless steel, and shall be at least an 18 inch diameter cylindrical chamber.

b. The process chamber surfaces shall have a set of internal, non-magnetic 304L stainless steel (SS) shields that are fixed to the side of the chamber but are easily removed to allow removal of excess deposited films, with a spare set of shields provided.

c. If the system has a top flange, then that flange shall be lifted from the chamber, when desired, via an electromechanical hoist.

d. The base of the chamber shall be fitted with a minimum of four copper gasket Conflat (CF) ports of 6 or 8 -inch diameter for mounting up to three confocal magnetron sputter sources.

e. Multiple CF ports shall be provided including a 6-inch view port, CF pumping port, roughing and N2 vent ports, vacuum gauges, and at least 2 general purpose 2.75-inch CF ports.

All CF chamber hardware shall be silver-plated bolts. The view port shall include a manual shutter.

f. The chamber shall be mounted to a support frame and include casters and leveling pads.All electronics shall be mounted in a standard 19-inch wide x 36-inch deep electronic rack including the Power Distribution (PD) box, control systems, power supplies, etc.

3. Loadlock Assembly:

a. The load lock chamber shall be capable of handling wafer holders of 150mm wafers, 100mm wafers and 76.2mm (SEMI standard 3-inch wafer) wafers with less than a 3 mm edge exclusion region.

b. Shall be a vacuum chamber with a quick access door and view port to provide easy loading and unloading of the substrate holders.

c. The load lock chamber shall be pumped via a turbo pump with splinter screen. The loadlock turbo shall be isolated from the loadlock via an electro-pneumatic gate valve.

d. The turbo pump shall be backed by the dry pump used to evacuate the main chamber.

e. A set of two electro-pneumatic valves shall be provided for roughing out the loadlock and backing the turbo pump.

f. The loadlock shall include ion and Convectron gauges connected to suitable readout and display devices, along with an electro-pneumatic vent and over pressure relief valve.

g. This loadlock shall provide a pressure below 5 x 10-7 Torr. The loadlock chamber shall be isolated from the deposition chamber by a gate valve with a CF flange.

h. The system shall have either manual transport of the wafer from the load lock into the main chamber or proven, reliable automatic transfer system. The transport mechanism must be robust with no observed failures or wafer breakages.

i. The system shall have the loadlock valves integrated into the software including auto pump/vent features with software controlled turbo pumping. The valves shall also be able to be opened/closed in a manual fashion and the software shall include interlocks that shall only allow valves to be opened/closed in a logical sequence.

j. OPTION: Provide a load lock equipped with a pumping gate valve and a process gas inlet for future oxygen dosing of the wafers in the load-lock. The oxygen dosing pressure shall be no higher than 10 Torr. The process inlet flow may be controlled by an electronic mass flow controller. The load-lock chamber shall be equipped with a gauge for low pressure indication, a 10 Torr capacitance manometer with isolation valve for oxidation pressure indication.

4. Pumping and Gauging: The deposition chamber shall include:

a. A cryo pump (for compatibility with existing systems we prefer a UHV On-Board Technology CTI-8) along with a suitable water cooled compressor. The cryo lines from the compressor shall be at least 10 feet. The cryo pump shall provide a pumping speed of 4,000 l/sec for water (the dominant background gas), 1,500 l/sec for air, and 1,200 l/sec for Ar.

b. A dry rough pump shall be used to evacuate the chamber and cryo-pump.

c. A base pressure of 2 x 10-8 Torr shall be guaranteed for the deposition chamber He Leak tested.

d. A throttle valve to limit pumping conductance.

e. A capacitance manometer to indicate 1-50 mTorr pressures which includes its own electro-pneumatic shut-off valve to isolate it from atmosphere when the chamber is vented.

f. Three computer controlled mass flow control units shall be supplied as follows: Argon (100 sccm), O2 (50 sccm), and N2 (50 sccm). Each MFC valve shall include one electro-pneumatic shut off valve. All gas tubing shall be electro-polished 304SS and cleaned for oxygen service.

Two electro-pneumatic valves Argon gas shall be plumbed directly to each sputter source . The N2 and O2 process gases shall be plumbed to the main chamber gas ring for reactive sputtering.

g. An Ionization Gauge (Bayard Alpert Gauge) shall be used to measure the low pressures in the main chamber. A wide range gauge shall monitor the chamber pressure from atmospheric pressure down to below 10-3 Torr. A separate Convectron-type gauge shall monitor the fore line pressure of the dry pump.

5. Deposition Sources

a. Three (3) UHV 3-inch diameter nonmagnetic magnetron sputter sources shall be incorporated into the deposition chamber in a sputter-up con-focal arrangement. The source positions shall be adjustable to obtain maximum uniformity over the rotating substrate. The sources shall have vacuum housed magnets, provide easy target changes. The units shall be water-cooled with no water-to target interface.

b. The sources shall be mounted on their own CF flanges each with its own electro-pneumatic shutter. The shutter and geometry shall be designed to minimize cross contamination between sources

c. Each source shall be in a confocal arrangement to allow for uniform sputtering onto the rotating substrate stage. The sputter sources shall be able to handle non-magnetic targets up to ¼” thick. The sources shall include adjustable height dark space shields to handle targets of various thicknesses.

d. The power supplies for the gun configurations shall have all three guns with a separate DC supply, with the ability to configure one of the guns for RF operation. We prefer Advanced Energy power supplies for system compatibility with existing cleanroom equipment.

e. One magnetron source shall be compatible with both RF and DC power supplies. One

13.56 MHz, 600-watt RF power supply with impedance matching network and auto tuner shall be provided for the RF operation of that source. The RF tuner shall be mounted to in close proximity to the selected RF sputter source. Software switching shall be provided between RF and DC supplies.

f. For the DC power supplies, we prefer Advanced Energy power supplies for compatibility with existing equipment. If power supplies smaller than 1.5 kW are specified in the proposal, the proposer shall provide documentation that the proposed gun/power supply combination can obtain a deposition rate and uniformity specification detailed in the Acceptance Section of this document.

6. RF bias-able, rotating platen Substrate Stage

a. The substrate rotation stage shall be compatible with substrate sizes up to 150mm diameter substrates. Two sets of substrate holders shall be provided to handle 150mm wafers, 100mm wafers and 76.2mm (SEMI standard 3-inch wafer) wafers with less than a 3 mm edge exclusion region.

b. The substrate rotation stage shall have a computer controlled motor to provide substrate rotation speeds up to 30 RPM.

c. The substrate stage shall be designed such that the wafer temperature will not exceed 60 ºC during electron beam evaporation of Al for five minutes at a rate of 3 nm/sec. The system shall have a substrate cooling design using water cooling with the closed loop chiller Or other acceptable methods are air cooling of substrate or using large thermal mass cooling.

d. The system shall include a single 100 Watt RF power supply with automatic matching network along with a feed through and vacuum contactor shall be provided for biasing the substrate. This RF bias assembly shall allow for substrate pretreatment in the main chamber prior to deposition.

e. The system shall include a pneumatically actuated substrate shutter.

System III (Item No. 0003) - Multi-Tool Deposition System described herein will be used for the development of precision quantum computing devices that utilize pure superconducting thin films and tunnel junctions. The Multi-Tool System shall include 3 Magnetron Sputter Deposition Sources with Materials Analysis capabilities to include: i) Residual Gas Analysis, ii) Low Pressure Rheed Analysis and iii) In-situ Ellipsometry Analysis Equipment. The Multi-tool system shall contain three sputter magnetron sources, and also provide a 3-pocket Electron Beam evaporation tool with this proposal. The system must be capable of maintaining a sustained substrate temperatures of 750 °C during deposition. The system shall be a sputter-up configuration with sources in a con-focal arrangement. Additionally the system shall include substrate surface cleaning capabilities and a load-lock chamber and computer automation of deposition steps using a recipe system.

1. General Specifications

a. All equipment, excluding the rough vacuum pump system, shall be Class 100 clean-room compatible, designed to sit entirely within the cleanroom. All clean-room equipment shall be housed entirely within a maximum footprint shall be 2 meters by 3 meters. including hook-ups to house facilities, such as gas line connections and vacuum lines, which will pass through the wall of the cleanroom to the service chase.

b. The system shall utilize single point connections for any necessary house facilities (such as chilled water, compressed air, vent gas, process gas).

c. The system shall have an internal electrical distribution and require only a single electrical connection to 208V, 3-phase, 100 amp connection.

d. The system shall be equipped with an easily accessible emergency, red in color, mushroom-button shut-off switch. When activated, it safely turns off any ongoing process without damage to a sample in process during the shut-down procedure.

2. Deposition Chamber

a. The deposition chamber shall be fabricated from 304L stainless steel. The chamber shall be at least an 18” diameter cylindrical chamber with a hemispherical bottom.

b. The process chamber surfaces shall have a set of internal, non-magnetic 304L stainless steel (SS) shields that are fixed to the side of the chamber but are easily removed to allow removal of excess deposited films, with a spare set of shields provided.

c. If the system has a top flange, then that flange shall be lifted from the chamber, when desired, via an electromechanical hoist.

d. Multiple CF ports shall be provided including a 6-inch view port, CF pumping port, roughing and N2 vent ports, vacuum gauges, and at least 2 general purpose 2.75-inch CF ports.

All CF chamber hardware shall be silver-plated bolts. The view port shall include a manual shutter. Furthermore ports for RHEED, RGA and an ellipsometer are required.

e. The chamber shall be mounted to a support frame and include casters and leveling pads.

All electronics shall mounted in a standard 19-inch wide x 36-inch deep electronic rack including the Power Distribution (PD) box, control systems, power supplies, etc.

f. The chamber shall include a bank of four 1-kW IR heat lamps to provide bake-out of the system. The lamps shall be driven by a programmable temperature control unit.

3. Loadlock Assembly

a. Shall be capable of handling wafer holders of 76.2mm (3 inch) and 100mm.

b. Shall be a vacuum chamber with a top mounted quick access door and view port to provide easy loading and unloading of the substrate holders.

c. The load lock chamber shall be pumped via a turbo pump with splinter screen. The loadlock turbo shall be isolated from the loadlock via an electro-pneumatic gate valve.

d. The load lock turbo pump may be backed by the dry pump used to evacuate the main chamber.

e. A set of electro-pneumatic valves shall be provided for roughing out the loadlock and backing the turbo pump.

f. The loadlock shall include a second set of ionization and Convectron gauges along with an electro-pneumatic vent and over pressure relief valve.

g. This loadlock shall provide a pressure below 5 x 10-7 Torr. The loadlock chamber shall be isolated from the deposition chamber by a gate valve.

h. The system shall have either manual transport of the wafer from the load lock into the main chamber or proven, reliable automatic transfer system. The transport mechanism must be robust with no observed failures or wafer breakages.

i. The system shall have loadlock valves are integrated into the software including auto pump/vent features with software controlled turbo pumping. The valves shall also be able to be opened/closed in a manual fashion and the software shall include interlocks that shall only allow valves to be opened/closed in a logical sequence.

4. Pumping and Gauging:

a. A cryo pump (for system compatibility with our existing systems we prefer a UHV On Board Technology CTI-8 ) along with a suitable water cooled compressor. The cryo lines from the compressor shall be at least 10 feet. The cryo pump shall provide a pumping speed of 4,000 l/sec for water (the dominant background gas), 1,500 l/sec for air, and 1,200 l/sec for Ar.

b. A dry rough pump shall be used to evacuate the chamber and cryo pump.

c. A base pressure of 5 x 10-9 Torr shall be guaranteed after bake-out.

d. A throttle valve to limit process chamber pumping conductance with computer control.

e. Three computer controlled mass flow control units shall be supplied as follows: Argon (100 sccm), O2 (50 sccm), and N2 (50 sccm). Each MFC valve shall include one electro-pneumatic shut off valve. All gas tubing shall be electro-polished 304SS and cleaned for oxygen service. Two electro-pneumatic valves shall be provided for roughing the chamber and the cryo-pump.

f. An Ion Gauge (Bayard Alpert Gauge) shall be used to measure the pressure in the main chamber. One wide range gauge shall monitor the chamber pressure from atmospheric pressure down to below 10-3 mbar. A second Convectron-type gauge shall monitor the fore line pressure of the dry pump.

5. Magnetron Deposition Sources

a. Three (3) UHV and tiltable 2-inch diameter magnetron sputter sources shall be incorporated into the deposition chamber. Programmable motorized magnetron tilt angle shall be adjustable via a feedthrough and manual tilt is acceptable. The sources shall have vacuum housed magnets, provide easy target changes, with no backing plate. The units shall be water-cooled with no water-to target interface.

b. The sources shall be mounted in a con-focal sputter up array and mounted on their own CF flanges each with its own electro-pneumatic shutter. The shutter and geometry shall be designed to minimize cross contamination between sources. Each source shall have its own power supply.

c. The sources shall include tiltable mounts for fine positioning to achieve the desired film thickness uniformity of +/- 5% over a 3 inch wafer for each material. The sputter sources shall be able to handle magnetic targets up to ~1/8” thick and non-magnetic targets up to ¼” thick. The ources shall include adjustable height dark space shields to handle targets of various thicknesses.

d. One of the magnetron sources shall be compatible with both RF and DC power supplies One 13.56 MHz, 600-watt RF power supply with impedance matching network and auto tuner shall be provided. The RF tuner shall be in close proximity to the selected RF sputter source.

e. Three DC power supplies shall also be provided for DC sputtering of the sources. We prefer Advanced Energy power supplies for system compatibility. If power supplies smaller than

1.5 kW are specified in the proposal, the proposer shall provide documentation that the proposed gun/power supply combination can obtain a deposition rate and uniformity specification detailed in the Acceptance Section of this document.

f. One 20 kHz pulsing unit shall be provided. This shall come with necessary cables to hook up to one of the DC power supplies.

g. Three high purity two inch targets, one each of Rhenium, Aluminum, Aluminum Oxide, shall be included in the delivered system.

6. The Three (3) pocket Electron Beam Source System shall include

I) Three (3) pocket Electron Beam Source :

a. Source size 10 cc minimum.

b. 5kW power supply with programmable sweep and automatic crucible indexing

c. Can be side mounted and retractable

d. High voltage discharge hook

e. Pnuematically actuated source shutter

f. Includes all electrical and water feedthroughs and shielding

g. Computer controlled

II) Which includes a Quartz Crystal thickness Monitor:

h. A Quartz Crystal thickness monitor shall be provided with an accuracy of +/-2% accuracy on thickness.

i. The Z-stage shall be motorized with an encoder so that rate vs. position information can be obtained. The crystal monitor shall be mounted on the sample stage.

7. RF bias-able, Rotating platen, Substrate Heating Stage shall include:

a. A substrate heater with a readily achievable and sustainable substrate temperature of 750°C for Silicon substrates during deposition. This shall include temperature readout computer control.

b. The heater rotation stage shall accommodate substrates of 76.2 mm (3 inch) and 100 mm (4 inch) diameters. Two sets of substrate holders shall be provided to handle 76.2 mm and 100 mm substrates.

c. The substrate rotation stage shall be computer controlled and provide substrate rotation speeds up to 30 RPM. This feed through shall be mounted to a motor driven Z-stage to accommodate easy substrate transfers with the loadlock.

d. System shall include a 100 Watt RF power supply with automatic matching network along with a feed through shall be provided for biasing the substrate. This RF bias assembly shall allow for substrate pretreatment in the main chamber prior to deposition.

e. System shall include a pneumatic substrate shutter with computer control.

8. Low Pressure RHEED System for Materials Analysis Instrumentation

a. A 35 keV RHEED gun shall be integrated into the chamber. The RHEED ports shall be large enough to include potential magnetic shielding due to magnetic fields from the magnetrons.

b. The system shall include a high precession RHEED apparatus including:

i. the electron source.

ii. a 35 keV power supply.

iii. interlock security system and diagnostic plug-in

iv. power supply for beam focusing and positioning.

v. Beam blanking (100 Hz) and beam rocking.

vi. Computer control of the gun parameters and spare filament.

vii. A RHEED screen and shutter for standard 6” OD CF viewport along with shielding for sputter system for gun and screen.

viii. RHEED System shall work at pressures below 1 x 10-5 Torr.

ix. A data acquisition package shall be provided for the RHEED unit that includes a high sensitive CCD, Camera frame grabber, a second computer for RHEED data acquisition with flat panel display.

9. Residual gas analyzer (RGA)

a. An RGA will be flange mounted with a mass range from 1 to 100 AMU.

b. Includes a SEM/Faraday detector and high sensitivity ion source with dual Yttrium oxide filaments.

c. Shall provide pressure measurement/Interlock for operation.

d. Shall tolerate 200°C bake out temperature with electronics removed.

e. Shall include software with process control module that will interface with laptop PC for operation.

10. In-situ Ellipsometer System shall include:

a. We request that the system include a J.A. Wollman M-2000 Ellipsometer system for compatibility with existing equipment.

b. Quartz viewports and manual shutters

c. Installation and training at customer facility by Woolman qualified installation engineer

d. Integration of Ellipsometer analysis software with system control software.

11. Computer Control Package:

The system shall provide for computer control of all functions including gas flows, gas isolation valves, throttling, process pressure shutter, and power supplies, rotation, substrate temperature.

The system computer control shall provide for recipes of arbitrary number of layers. The computer control system shall provide for control of recipes in both single and co-deposition modes. The system shall provide for manual override control of all deposition and system functions. The control system shall provide for logging of all deposition parameters. Deposition recipes shall be stored and recalled. The system shall perform cryopump regeneration, sample transfer, process and load lock pump down and venting under computer control. The system shall provide computer and recipe control of all valves, and system parameters.

12. Safety Features: All systems (Item Nos. 0001, 0002 and 0003) shall come complete with a variety of safety features as follows:

a. There shall be an EMO (Emergency Off) button on the front of the main electrical rack.

b. All electro-pneumatic valves (including the MFC isolation valves) and shutters shall close on power failure. At power-up the all valves and shutters shall remain closed. Furthermore, the (sputter source, if applicable) e-gun power supplies (and the substrate heater assembly, if applicable) shall have water flow switches to interlock the units to minimize risk of damage due to excessive heating. Where applicable, the substrate heater shall also become deactivated in case of a power failure The chamber shall come with vacuum interlocks so that all lethal voltages are disabled if the chamber is vented to atmosphere or the chamber top lid is lifted. An over-pressure relief valve shall be installed on the chamber.

13. Acceptance Testing:

The system shall undergo on-site acceptance testing (per below acceptance specifications) with customer training at the NIST Boulder Labs, within one month of delivery, demonstrating process performance as specified. It is expected that this testing will take 1 – 3 days.

System I (Item No. 0001) - The Electron Beam deposition system shall demonstrate the following during the factory acceptance test and the on-site acceptance test:

a. Base pressure of less than 2 x 10-8 Torr.

b. Pumping of the load-lock from atmospheric pressure to less than 1x10-6 Torr in less than 20 minutes.

c. Load-lock base pressure of less than 2 x 10-7 Torr within 30 minutes after a typical venting for sample loading.

d. Deposition of aluminum thin film at a rate of at least 3nm/sec while maintaining a thickness uniformity of less than +/-5% over a 100 mm (4 inch) wafer with a 5 mm edge exclusion zone.

e. A substrate temperature must not exceed 60 ºC during an electron beam evaporation of Al for five minutes at a rate of 5nm/sec.

System II (Item No. 0002) - The Magnetron Sputter Deposition system shall demonstrate the following during the factory acceptance test and the on-site acceptance test:

a. Base pressure of less than 2 x 10-8 Torr.

b. Pumping of the load-lock from atmospheric pressure to less than 1x10-6 Torr in less than 20 minutes.

c. Load-lock base pressure of less than 2 x 10-7 Torr

d. Deposition of Al rate at least 1.5 nm/sec while maintaining a thickness uniformity of less than 2 % over a 76.2 mm wafer with a 3 mm edge exclusion zone.

e. A substrate temperature must not exceed 60 ºC after a sputter deposition at 1 kW for 5 min. The gun configuration must be identical to Step 4 directly above.

System III (Item No. 0003) - The Multi-Tool system shall demonstrate the following during the factory acceptance test and the on-site acceptance test:

a. Base pressure of less than 5 x 10-9 Torr within less than 72 hours.

b. Pumping of the load-lock from atmospheric pressure to less than 1x10-6 Torr in less than 20 minutes.

c. Load-lock base pressure of less than 2 x 10-7 Torr.

d. Deposition of Al at a rate of at least 1.5 nm/sec while maintaining a thickness uniformity of less than +/- 5% over a 3 inch wafer with a 5 mm edge exclusion zone.

e. Substrate heating during deposition capable of sustained output of up to 750 ºC.

14. Documentation:

For Item Numbers 0001, 0002 and 0003, the contractor shall provide:

i. All documentation shall be provided in either electronic form or be printed on cleanroom paper and bound in cleanroom binders.

ii. All OEM manuals shall be included.

iii. Documentation shall include control schematics, a complete set of operations and maintenance manuals, and plumbing and vacuum schematics.

iv. A full set of electronic schematics for the system.

v. The system shall include source code for control software.

15. All systems shall meet OSHA standards for operator safety and SEMI standards for environmental safety.

16. Express Warranty:

The contractor shall warrant the entire systems for a period of not less than one year beginning at on-site acceptance. The warranty shall include unlimited telephone/e-mail support for questions regarding operation. All costs including parts, labor, travel, and other expenses necessary to repair the systems will be borne solely by the contractor at no additional costs to the U.S. Government.

REPORTING REQUIREMENTS UNDER THE RECOVERY ACT

Recovery Act reports are a required deliverable in accordance with FAR 52.204-11. Failure to submit timely, complete, and accurate Recovery Act reports will be considered failure to comply with a contract term or condition.

Site Preparation

NIST will provide the laboratory site for installation of the instrument prior to instrument delivery and installation by the Contractor. Prior to installation, the Contractor may be required to meet with the Technical Information Contact (TIC) who will be responsible to perform all construction and/or service related tasks necessary to prepare the NIST laboratory for the equipment installation. This meeting may include, but is not limited to attending in person or via conference call, and providing information to the TIC with respect modifications required for the installation site.

Installation

The new facility for this system is not expected to be completed until May 2012. As a result the offeror shall either delay manufacturing or deliver to NIST which will store the Systems until installation in the new facility. The system shall be provided with suitable transportation and installation support. The Government is responsible for site preparation and required utilities according to the site preparation documentation.

o The contractor is responsible for all packing and shipping provisions to ensure that the system arrives at NIST’s site in an undamaged, working condition. The contractor shall inform NIST of shipping plans two weeks before actual shipment.

o The contractor shall provide qualified personnel to perform and/or oversee all system installation and start-up activities necessary to ensure the system is fully functional upon completion including all rigging necessary for tool move-n from loading dock.

o Installation shall be performed within two (2) weeks after notification by the Contracting Officer that the new facility is ready for system installation.

Training

The contractor shall conduct one (1) training session for up to three (3) users at NIST. The training shall provide a thorough demonstration of all system/solution functions, maintenance, data administration, and basic troubleshooting. The training may be completed at NIST immediately after installation/set-up and on-site measurements demonstrating that no damage or misalignment issues arose during transportation and installation, but shall be completed no later than 30 days after installation.

Factory Site Visit

The Government may, at its discretion, make site visits to the factory to observe procedures for remanufacture, integration, and handling or to receive demonstrations or instruction on the operation of the instruments. The visits will be coordinated with the contractor in sufficient time as not to impede progress on delivery of the instruments.

Inspection and Acceptance

In addition to the inspection and acceptance terms articulated in 52.212-4, the Government reserves the right to perform such performance tests and evaluations to verify specified system performance. Such tests and evaluations, if performed, shall be conducted within the environment that the system is to be operated. The Contractor has the right to be present during the tests and evaluations, if performed, at the Contractor’s expense.

Delivery

Delivery shall be FOB DESTINATION. The new facility for this system is not expected to be completed until May 2012. As a result, the offeror shall either delay manufacturing or deliver to NIST which will store the Systems until installation in the new facility. If delivery is delayed until the new facility is completed, the Contractor shall deliver the system within 20 calendar days upon receipt of written notification from the Contracting Officer that the facility is complete and ready for installation. Delivery is to be completed in accordance with the Contractor’s commercial carrier.

The Contractor shall deliver to address: Department of Commerce, National Institute of Standards and Technology, 325 Broadway, Boulder, CO 80305-3328.

PROVISIONS AND CLAUSES:

The following provisions and clauses apply to this acquisition and are hereby incorporated by reference. All FAR clauses may be viewed at http://acquisition.gov/comp/far/index.html.

Those marked with an asterisk are provided in full text in Attachment 1.

Provisions

*52.212-1, Instructions to Offerors-Commercial Items *52.212-3 Offeror Representations and Certifications-Commercial Items

Offerors shall complete annual representations and certifications on-line at http://orca.bpn.gov in accordance with FAR 52.212-3 Offerors Representations and Certifications- Commercial Items.

If paragraph (j) of the provision is applicable, a written submission is required.

Clauses

*52.212-4 Contract Terms and Conditions—Commercial Items 52.212-5 Contract Terms and Conditions Required to Implement Statutes or Executive Orders— Commercial Items (JUNE 2010)--ALTERNATE II (APR 2010)—Commercial Items including subparagraphs:

52.203-6, Restrictions on Subcontractor Sales to the Government http://acquisition.gov/comp/far/index.html

*52.203-15, Whistleblower Protections Under the American Recovery and Reinvestment Act of 2009 *52.204-11, American Recovery and Reinvestment Act--Reporting Requirements 52.219-6, Notice of Total Small Business Set-Aside 52.219-8, Utilization of Small Business Concerns 52.219-28, Post Award Small Business Program Representation 52.222-3, Convict Labor;

52.222-19 Child Labor – Cooperation with Authorities and Remedies;

52.222-21, Prohibition of Segregated Facilities;

52-222-26, Equal Opportunity;

52.222-35, Equal Opportunity for Special Disabled Veterans, Veterans of the Vietnam Era, and Other Eligible Veterans 52.222-36, Affirmative Action for Workers with Disabilities;

52.222-37, Employment Reports on Special Disabled Veterans, Veterans of the Vietnam Era, and Other Eligible Veterans 52.225-5, Trade Agreements 52.225-13 Restriction on Certain Foreign Purchases;

52.232-30, Installment Payments for Commercial Items 52.232-33 Payment by Electronic Funds Transfer-Central Contractor Registration.

*52.237-2 Protection of Government Buildings, Equipment, And Vegetation *52.247-34 F.O.B. Destination *1352.201-70 Contracting Officer’s Authority *1352.209-73 Compliance With The Laws

Central Contractor Registration

In accordance with FAR 52.204-7, the awardee must be registered in the Central Contractor Registration (www.ccr.gov) prior to award. Refusal to register shall forfeit award.

Due Date for Quotations

Offerors shall submit their quotations so that NIST receives them not later than 12:00 p.m.

Eastern Time on Monday, 23 August 2010. FAX quotations shall not be accepted. E-mail quotations shall be accepted at patrick.staines@nist.gov with “cc” to marie.gilliam@nist.gov. Offerors’ quotations shall not be deemed received by the Government until the quotation is entered into the e-mail address(es) inbox set forth above.

Quotations shall be sent to the National Institute of Standards and Technology, Acquisition Management Division, Attn: Patrick Staines, Contracting Officer, 100 Bureau Drive, Stop 1640, Gaithersburg, MD 20899-1640. All offerors should ensure the RFQ number is visible on the outermost packaging.

Because of heightened security, FED-EX, UPS, or similar delivery methods are the preferred method of delivery of quotes. If quotes are hand delivered, delivery shall be made on the actual http://www.ccr.gov/ mailto:patrick.staines@nist.gov mailto:marie.gilliam@nist.gov due date through Gate A, and a 48 hour (excluding weekends and holidays) prior notice shall be provided to Marie A. Gilliam, Contractor Contract Specialist on 301-975-6753.

Addendum to FAR 52.212-1, Quotation Preparation Instructions

1. Price Quotation: The offeror shall submit an original and four copies of the completed price schedule. If the quotation is submitted electronically, additional copies are not required. The pricing quotation shall be separate from any other portion of the quotation. The offeror shall propose a firm-fixed-price, FOB Destination, for each item. Price quotations shall remain valid for a period of 90 days from the date quotations are due.

2. Technical Quotation: The offeror shall submit an original and four copies of the technical quotation. If the quotation is submitted electronically, additional copies are not required. The technical quotation shall address the following:

Technical Capability: The offeror shall submit a technical description or product literature for the equipment it is proposing, which clearly identifies the manufacturer, make and model. The offeror must demonstrate that its proposed equipment meets or exceeds each minimum requirement and each secondary requirement described in the specifications by providing a citation to the relevant section of its technical description or product literature. If applicable, evidence that the Offeror is authorized by the original equipment manufacturer to provide the item(s) in the quotation should be included.

Compliance: Offeror shall comply with all applicable US electrical and associated safety and health code requirements relative to the described equipment. The Contractor shall provide documentation/certification that the system meets or exceeds these codes or standards.

Contractor shall be required to match up to common US voltages.

Special quotation requirements for quotes of demonstration models, used or refurbished instruments:

a. Describe or list any major parts or subsystems of the proposed system that are already considered obsolete (either unavailable or only available on a best-efforts basis).

b. Describe or list any major parts or subsystems of the proposed system that are currently not obsolete but have a planned obsolescence date. Indicate the planned obsolescence date.

c. Describe or provide any additional information on planned parts and service availability over the expected lifetime of the tool and define how long the offeror is able to support the quoted system.

Experience: The offeror shall demonstrate the extent to which it has recently manufactured, distributed, and installed same or similar equipment.

Past Performance: The offeror shall provide past performance information regarding relevant contracts over the past three (3) years with Federal, state, or local governments, or commercial customers. If the offeror intends to subcontract with another firm(s) for part of this requirement, that firm’s past performance information shall also be provided. If the offeror has no relevant past performance, it may include a statement to that effect in its quotation. The government reserves the right to consider data obtained from sources other than those described by the offeror in its quotation. It is recommended that approximately 3-5 contracts be referenced.

The description of each contract/order described in this section shall not exceed one half page in length. For each contract/order, the offeror shall provide the following information:

1. Contract number;

2. Description and relevance to solicitation requirements including dollar value;

3. Period of Performance – indicate by month and year the state and completion (or “ongoing”) dates for the contract;

4. Reference Contact – If a non-Government contract, identify the name and address of the client with current telephone number and email address of a point of contact of the client responsible for the contract;

5. Contracting Office – If a Government contract (Federal or state), identify the Procuring Contracting Officer (PCO), administrative Contracting Officer (ACO),…