Atch 1 Govt Response to Industry Inquiries Final Copy-1.pdf

SB134110RQ0245

Amendment A002

ATTACHMENT 1

Government Response to Industry Inquiries

Question 1, System 1 Electron Beam Deposition System:

General Specifications, Paragraph 1.d. The area 2 x 3 meters, including hook ups to house facilities such as gas line connections, etc. is not clear - It sounds like the 2 x 3 meter area really is pushed up against the wall for these facilities to come out and be included in the area. Is this correct? If not, can you please clarify this point a bit more? Will the electronic racks be wall mounted? Or will they be in the clean room? Will the cables need to go under the floor over to the machine?

Response The 2x3 meters refers to the footprint size within the clean room walls and includes the equipment rack and vacuum deposition chamber system but not pumps nor any water chillers (which are all in the service chase).

Question 2, Item 0001. Paragraph 1.h., closed-loop chiller for substrate temperature. Is this water cooled or air cooled chiller? Please clarify what type of chiller you prefer. I assume this sits within the 2 x 3 meter space.

Response. Refer to System I, 6c Substrate Stage requirements.

Question 3, Item 0001, Paragraph 4.a. The specifications require a UHV On-Board Cryopump.

Brooks (CTI) does not make a UHV on board cryopump. You can get an on-board pump with a CF flange, but the pressure relief valve is sealed via O-rings. Also, a standard CTI 8 UHV cryo-pump will come with a burst disc. This disc will need to be replaced each time the pump is regenerated. Please let us know which type of pump you prefer.

Response. A CTI 8 On-Board cryopump with Conflat flanges is required. Some O-ring seals are allowed in the system like that for blow off relief valve.

Question 4, Item 0001, Paragraph 4.d. The specifications request a throttle valve for this system. We can provide either a three position pneumatic valve or a stepper motor controlled gate valve that works with the Capacitance manometer to provide closed loop pressure control.

Which do you prefer?

Response. Either approach is acceptable.

Question 5, Item 0001, Paragraph 5.b Is it a requirement that the ebeam power supply operates at 10 kV? Can it operate at lower voltage?

Response. 10kV supply is required IAW System I (Item No. 0001) specifications.

Question 6, Item 0001, Paragraph 6.d., RF bias of substrate. Is there any concern of substrate heating by the RF Bias? Is there a temperature limit here as well?

Response. There is no specific requirement for substrate temperature during RF bias cleaning. It is expected that the same substrate cooling system used for deposition applies during RF cleaning due to the substrate holder being the same and located in the main chamber

Question 7, Item 0001. The specifications do not specify a Computer Control System on System I like it does for System III. I assume that System I is computer controlled. Please clarify.

Response. Paragraph 11, Computer Control Package is applicable to Item 0001, 0002 and 0003 as well as Paragraphs 12, 13, 14, 15, and 16.

System II, Magnetron sputter deposition system (Item 0002)

Question 8. Same question as above regarding space.

Response. See response to Question No. 1.

Question 9, Item 0002, Paragraph 4.a. UVH CTI On-Board Pump. Same question/comments as above.

Response. See response to Question No. 3.

Question 10, Item 0002, Paragraph 4.f. The specifications request three MFC’s each with a shut-off valve. It then states “Two electro-pneumatic valves Argon Gas shall be plumbed directly to each sputter source.” Please clarify what is required - will Argon be going to more than one source at a time?

Response. The MFCs shall each have their own shut off valves. The vendor will specify the magnetron sources and thus will specify how the Argon gas flow is achieved to operate each source.

Question 11, Item 0002. The specifications mention a main chamber gas ring. Can you clarify this? Is there a gas injection ring around the substrate assembly?

Response. A gas ring within the main chamber which surrounds the substrate assembly shall be provided for reactive sputtering.

Question 12, Item 0002, Paragraph 5. Deposition Sources: The specifications don’t mention whether these sources are to be able to tilt like in System III. Are these fixed sources?

Response. Yes fixed.

Question13. Or is some tilt capability required?. If you would like the sources to tilt please clarify how this is to be done.

Response. No, tilt is not needed for System II.

Question 14, Item 0002, Paragraph 5e. The specification states “software switching shall be provided between RF and DC supplies”. I assume that you would like one RF and one DC supply to be connected to a switch so that one gun only can run in either RF or DC mode. Please clarify.

Response. As stated in the specification, only one source has RF and DC operation capability.

Question 15, Item 0002, Paragraph 6.c RF Bias-able rotating substrate stage. The specification states that the substrate stage shall be designed such that the wafer temperature will not exceed 60 C during ebeam evaporation….. This is a sputter system only. Can you clarify if this is a requirement for sputtering? Or is this a typo?

Response. This is a typo. Change “electronbeam evaporation” to read “sputter deposition”. The specification is for a sputter deposition system. This is also part of the Acceptance Testing (page 17).

Question 16, Item 0002, Paragraph 6.D Same point about RF bias and its effect on substrate temperature. Is this an issue?

Response. Same as Question 6.d. System I. There is no specific requirement for substrate temperature during RF bias cleaning. It is expected that the same substrate cooling used for deposition applies during RF due to the substrate holder being the same and located in the main chamber.

Question 17. There is no mention of film thickness uniformity for this system. Is there a uniformity specification? If so what is it?

Response. The system film uniformity specification is stated on page 17 System II item “d” as part of the Acceptance Testing.

Question 18. The specification does not specify a Computer Control System on System II the way you do for System III. I assume that System I is computer controlled. Please clarify.

Response. Paragraph 11. Computer Control Package is applicable to Item 0001, 0002 and 0003 as well as Paragraphs 12, 13, 14, 15, and 16.

System III – Multi-Tool Deposition System (Item 0003)

Question 19, Item 0003, Paragraph 4a. UHV On-Board cryopump- not available. Please clarify what you want.

Response. A CTI 8 On-Board cryopump with Conflat flanges is required. Some O-ring seals are allowed in the system like that for blow off relief valve.

Question 20, Item 0003, Paragraph 4e. The specification specifies three process gasses in this chamber. It does not specify where you would like the gas to enter the chamber as you do in System II. I assume that we can bleed the gas into the chamber in remote location. Or do you want something similar to that noted in System II above?

Response. A gas ring would be acceptable.

Question 21, Item 0003, Paragraph 5.a. The specifications state “Programmable motorized magnetron tilt angle shall be adjustable via a feed through and manual tilt is acceptable”. Either the tilt is motorized or it is manual. Which is required here?

Response. Either programmable or manual is acceptable.

Question 22, Item 0003, Paragraph 5.d. The specification state that one source be compatible with both RF and DC supplies. Do you want a switch like you requested in System II? Or will you just manually swap cables when necessary?

Response. This question is a repeat of Question 40 (for Paragraph 5d, System III). See response to Question A40.

Question 24, Item 0003, Paragraph5.g. The specification asks for three targets- each 2” in diameter but you don’t mention the thickness. For the Rhenium target- do you want this to be ¼” thick?

Response. 1/4” thick is acceptable.

Question 25, Item 0003, Paragraph 6-I The specification requires a computer controlled ebeam source. We would provide a deposition rate monitor that you program the monitor directly and the computer will then initiate the deposition. IS this acceptable? Or do you want to be able to control the deposition monitor completely from the computer?

Response. Either full computer control of the rate monitoror , manual monitor setup with the computer initiating the deposition is acceptable.

Question 26, Item 0003, Paragraph 6-II The specification requests a Z-stage to move the QCM to obtain rate versus position. It also specifies three sputter sources and one ebeam source- none of these sources is going to provide a uniform flux over the wafer surface- so obtaining a profile along one axis of the wafer for each source does not provide much useful information.

Inserting the source in the center of the wafer will provide a basis for obtaining a realistic deposition rate for each source. It also states the monitor shall be mounted on the sample stage.

This is not possible as the wafer must be mounted here. Also, the radiation from the substrate heater will not allow the QCM head to sit underneath the sample during high temperature deposition- it will have to be offset- ideally in a position where it can monitor the ebeam source.

Please clarify what you are looking for here.

Response. Mounting the QCM from the chamber is acceptable. It should be on a translation stage so that the actual flux onto the sample can be determined. Moving it out of the line of the deposition for process monitoring is acceptable after that.

Question 28, Item 0003, Paragraph 7a. - RF bias able Substrate heating stage. What type of material is required to heat to 750 C? Do you want a flange mounted pyrometer to monitor the wafer temperature?

Response. Materials include Si wafers as well as sapphire wafers with the backside coated with Nb. The stage should be calibrated and temperature read out. Acceptable temp readout systems are: i) thermocouple readout connected to the computer for process monitoring and feed back ii) pyrometer or iii)other means of monitoring the temperature during the process.

Question 29, Item 0003, Paragraph 8. Low pressure RHEED - will you be doing any evaporation during RHEED analysis?

Response. Yes

Question 30, Item 0003, Paragraph 11, Computer Control Package: The specifications require a computer control package to run System III. The specification requires that the computer control wafer transfer for the load lock. With a manual load lock there will be no computer controlled wafer transfer other than having the substrate stage drop out of the heater and orient itself in the correct position for direct wafer transfer. Is sufficient?

Response. Sample load lock transfer is specified at item (3h) for System III. It is acceptable either manual or automatic.

Paragraph 13- Acceptance Testing.

Question 31. System I: How do you plan to measure the temperature of the substrate during evaporation of Al?

Response. Temperature will be measured using Temperature dots covered with Kapton film during a deposition as specified.

Question 32. How do you plan to measure the film thickness uniformity?

Response. Film Thickness will be measured by photolithographic patterning and etching, then using a profilometer over wafer surface.

Question 33. System II: Thickness specification - uniformity of less than 2% over a 76.2 mm wafer with three mm edge exclusion. Is this +/- 2% of really +/- 1%? How do you plan to measure this?

Response. Specification is for +/- 2% over wafer (typo dropped the “+/-“). Film Thickness will be measured by photolithographic patterning and etching, then using a profilometer over wafer surface.

Question 34, System III. How do you plan to measure wafer temperature?

Response. Temperature and thickness measurement will be same for all three systems and is answered in the response to Question 31 and 32.

Question 35. For the sputter system, Paragraph 3.j. - Will the pressure be measured by a Capacitance manometer located on the load lock and its readout would be used to shut the gas off once the desired pressure is reached?

Response. Metals oxidation will be performed in the load lock by flooding with oxygen and controlling the pressure with the capacitance manometer that will shut off the oxygen flow when desired pressure is reached.

For the Evaporation System I and sputter system II Question 36. Is the vendor required to supply the closed loop chiller for cooling of this stage?

Please clarify this point.

Response. As per the specification System I, Paragraph 6.c. and System II, Paragraph 6.c., if the vendor offers water cooling for substrate stage then a closed loop chiller shall be provided with the system.

Question 37. For the System II, magnetron sputter system you request three UHV 3” magnetron sources with tilt capability. The specifications do not indicate if the tilt is done in-situ without opening the chamber, or if you need a manual or motorized feed through on the flange to allow you to tilt without breaking vacuum. Please clarify.

Response. The tilt is only for system III. It is not in the specification for System II.

Question 38. For System III the specifications require a motorized tilt and also state that manual tilt is acceptable. I assume by this you mean that you would accept a manual feed through on the flange to provide tilt without breaking vacuum. Please clarify.

Response. The objective is to NOT break vacuum when adjusting the magnetron tilt. Motorized or manual tilt control is acceptable.

Question 39. For the basic Magnetron Sputter System II Paragraph 5.e. the specification requires “software Switching shall be provided between RF and DC Supplies” . Does this mean that you require a computer controlled RF/DC switch to change from the RF to DC supply or from DC to RF? Or that the software simply has the ability to speak to four supplies and you will physically change the DC cable with the RF cable when you want to change the mode of sputtering?

Response. For System II either Computer controlled or manual control of RF/DC switching is acceptable. . Changing magnetron sputter cables is not acceptable.

Question 40. System III Paragraph 5.d., the specification requires that one magnetron be compatible with both RF and DC power supplies. Yet it does not require “software switching”.

Will you just swap cables when you want to change modes and the software will provide the ability to operate either a DC or RF supply? Or is a computer controlled RF/DC switch for this system also required? Please clarify.

Response. . For System III (same as System II) either Computer controlled or manual control of RF/DC switching is acceptable. Changing magnetron sputter cables is not acceptable.

Question 41. In Paragraph 5.e the specifications require 1.5 kW DC supplies for 2-inch magnetron sources. Without direct water cooling of the target it would be very difficult to operate with a 2” Al target at power levels much above ~400 Watts. Thus, power supplies with more than 500 or 600 watts does not make sense. Please comment on this issue.

Response. Note that the Acceptance Testing for System III (d) has been amended. The Offeror should provide documentation that the proposed gun/power supply combination can obtain a deposition rate and uniformity specification detailed in the Acceptance Testing Section of the specification.

Question 42. Please confirm that 3” sputter targets with the 3” sputter sources on System II are not required.

Response. Targets are not required to be delivered with System II.

Question 43. The specifications state “e. The system shall be equipped with a closed loop chiller to maintain substrate temperatures during deposition. For the evaporation System I and sputter system II, please confirm that this closed loop chiller’s only purpose is to cool the substrate and not the entire system.

Response. That is correct, closed loop chiller is to cool substrate stage if water cooling is the vendor’s offered choice.

Question 44. Bid Schedule, Item 003 specifies for System III, Multi-Tool System including Sputter deposition sources, an e-beam source, a thermal evaporation source, and an Ion beam source. In the specifications for System III there is no mention of a thermal source or evaporation source. Are these two items supposed to be part of this system or not? Please clarify.

Response. This is an error. System III Does NOT include a Thermal Source nor an Ion Beam Source as mentioned in the Bid Schedule.

Question 45. Regarding System II. You request a deposition rate for Al of at least 1.5 nm/sec while maintaining a thickness uniformity of less than 2% over a 76.2 mm diam wafer. Looking at some calculations using a power of 1.5 kW I don’t think are rate of 1.5 nm/sec is realistic for say a 6” throw distance with the source coming in at an angle. A rate of about 1 nm/sec is more realistic. Please comment.

Response. The stated Acceptance Criteria is amended to read: deposition rate for Al of at least

1.0 nm/sec while maintaining a thickness uniformity of less than +/- 2% over a 76.2 mm diam wafer with a 3mm edge exclusion zone.