Tech Clarifiaction Answers.pdf
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- Attached to
- USAFA Thin Film Vacuum Deposition and Coating System Federal contract opportunity
- Solicitation number
- FA700025Q0044
About this file
This document is a Technical Clarifications document for a Request for Quote (RFQ) detailing specifications for a thin film deposition system. The technical requirements cover multiple aspects including substrate characteristics, film deposition parameters, vacuum and pumping specifications, power sources, process gases, monitoring capabilities, and operational throughput. Key technical specifications include substrate sizes of 1 inch or 1 cm squares, deposition of films using e-beam and potentially sputtering methods, thickness range of 10-1000nm with 20% tolerance, substrate heating up to 350°C, base pressure of 1e-8 mbar or better, and a throughput target of 1-3 parts/wafers per week. Additional requirements include a cylindrical chamber design with a service door, chamber baking, and compatibility with standard inert gas supplies and power configurations (480V, preferring 208V). The system requires closed-loop cooling and uses standard gases, with no specific substrate biasing needed.
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Other files for this federal contract opportunity
| File | Type | Posted |
|---|---|---|
| Combined Synopsis Solicitation_Coating System_FA700025Q0044 Amendment 3.pdf | ||
| Attachment 4 - FAR 52.212-3(b).pdf | ||
| Tech Clarifiaction Answers.pdf | ||
| Attachment 2 - Provisions and Clauses_FA700025Q0044.pdf | ||
| Attachment 3 - Buy American Certificate.pdf | ||
| Attachment 1 - Salient Characteristics.pdf | ||
| Combined Synopsis Solicitation_Coating System_FA700025Q0044.pdf |
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Text version
Tech Clarifications for RFQ
(Bold = required to proceed)
A) Substrates & Fixturing
1. Form factor(s): Exact substrate sizes/shapes (e.g., 4″ wafers, 4″ squares; thickness range)? Typically 1 inch or 1 cm squares
2. Pieces per run: Target count per load; any scale-up plan? Typically 1-2
B) Films, Processes & Performance
6. Materials list by method: Sputter (DC/RF): TBD ; E-beam: Si, C ; Thermal: TBD .
7. Thickness range & tolerance: Min/max (nm/µm) and allowed ±%.10-1000nm 20%
8. Uniformity targets: Within-substrate ±% and batch-to-batch ±% over loaded area.20%
9. Deposition rates: Desired rates (Å/s or nm/s) per process. 1 A/s to 1 nm/s
10. Substrate heating: Required setpoints (up to 350 °C), ramp, stability (±°C), dwell. Up to 350C, ramp 10 minutes, stable to 20C
11. Substrate bias: DC/RF bias needed? Voltage/current range or just “no bias.” Nothing Special
C) Vacuum & Pumping
12. Base pressure requirement: 1 e-8 or better mbar/Torr (pre-process).
13. Process pressure windows: Sputter/evap ranges; throttle-valve control? Nothing special
14. Cryopump spec: Confirm ≥1500 L/s (on N₂) and which chamber(s) need cryo. OK as long as above pressure is reached
D) Sources & Power
15. Sputter magnetrons: “Two 2″” = exactly 2″, or is 4″/100 mm acceptable? Either
E) Process Gases & MFCs
16. Two MFC channels: Which gases and max flows? (e.g., Ar 200 sccm + O₂/N₂ 100 sccm). Standard gas, mostly inert
F) Monitoring & Metrology
17. QCM distribution: Total four sensors—how many in each chamber? Preferred controller
(INFICON/SRS)? Multi-crystal heads? Need only one
18. Rate/thickness control: Closed-loop to PSUs or monitor-only with time/power recipes?
Monitor only
G) Throughput & Operations
19. Throughput target: Parts/wafers per week at steady state. 1-3
H) Acceptance Criteria (FAT/SAT)
20. Quantitative pass/fail metrics: Base pressure; rate stability (± % over min); thickness uniformity (±% over area); particles/defects; electrical/optical tests.
Nothing critical
I) Facilities & Site Readiness
21. Power: Voltage/phase/frequency and max available current (e.g., 480 V 3-phase, 480V OK, prefer 208V
22. Cooling: Flow, ΔT, pressure (or need a closed-loop chiller).closed loop
23. Compressed gases: CDA spec (dew point, oil-free), N₂ supply; house Ar/O₂/N₂
(bottles/bulk).Oil free, bottles
J) Commercials & Logistics
24. Architecture: Will a cluster (load-lock + separate sputter & evap chambers) be accepted, or must it be single-chamber? Either
25. Two magnetron ion sputter sources of size 2 inch. It says "ion sputter source." Is it a regular sputter or an ion beam-assisted sputter? Regular Sputter
26. 4-pocket E-beam source. What is the e-beam CC? For a 4-poket, we usually use about 7. Is that correct?
CC is graphite crucible. 4 or 7 pockets are fine.
27. Deposition unit. What is the deposition unit? Is it a Micron? Deposition unit refers to the coating system.
28. Do you need Chamber Baking? Baking is required.
29. Can you tell me what e-beam source you're using? I'd like to know if it uses aluminum or magnetic materials. TBD, most likely not aluminum or magnetic materials other than the magnet to turn the electron beam.
30. Can the chamber be cylindrical? Yes the chamber can be cylindrical
31. Can the chamber have an extra "door"? We design chambers with a door that can be useful for service, to replace materials in crucibles, targets in magnetrons cleaning the chamber, etc. Of course, the door will be only for service, normal sample transfer will be via a load-lock.
Yes the chamber can have an extra door
32. Please confirm if you need separate power supplies for biasing the substrate holder. If yes, indicate DC, RF, or both. No biasing of the substrate is required.
| A) Substrates & Fixturing |
| B) Films, Processes & Performance |
| C) Vacuum & Pumping |
| D) Sources & Power |
| E) Process Gases & MFCs |
| F) Monitoring & Metrology |
| G) Throughput & Operations |
| H) Acceptance Criteria (FAT/SAT) |
| I) Facilities & Site Readiness |
| J) Commercials & Logistics |
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