Tech Clarifiaction Answers.pdf
PDF 184 KB Posted
- Attached to
- USAFA Thin Film Vacuum Deposition and Coating System Federal contract opportunity
- Solicitation number
- FA700025Q0044
About this file
This document is a Technical Clarifications document for a Request for Quote (RFQ) detailing specifications for a thin film deposition system. The technical requirements cover multiple areas including substrate specifications, film deposition parameters, vacuum and pumping conditions, and facility readiness. Key technical details include substrate sizes of 1 inch or 1 cm squares, 1-2 pieces per run, film thickness range of 10-1000nm with 20% tolerance, deposition rates of 1 Å/s to 1 nm/s, substrate heating up to 350°C, and a base pressure requirement of 1e-8 mbar or better. The system architecture is flexible, with either a single-chamber or cluster configuration acceptable.
Additional specifications include process monitoring with one quartz crystal microbalance (QCM) sensor, standard inert gas usage, a throughput target of 1-3 parts/wafers per week, and power requirements of 480V (with a preference for 208V). Cooling will use a closed-loop system, and compressed gases will be oil-free and bottled. Acceptance criteria are described as "nothing critical" and will involve base pressure, rate stability, thickness uniformity, particle/defect assessment, and electrical/optical tests. The document appears to be seeking clarification on technical capabilities for a potential thin film deposition equipment procurement.
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Other files for this federal contract opportunity
| File | Type | Posted |
|---|---|---|
| Combined Synopsis Solicitation_Coating System_FA700025Q0044 Amendment 3.pdf | ||
| Attachment 4 - FAR 52.212-3(b).pdf | ||
| Tech Clarifiaction Answers.pdf | ||
| Attachment 2 - Provisions and Clauses_FA700025Q0044.pdf | ||
| Attachment 3 - Buy American Certificate.pdf | ||
| Attachment 1 - Salient Characteristics.pdf | ||
| Combined Synopsis Solicitation_Coating System_FA700025Q0044.pdf |
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Text version
Tech Clarifications for RFQ
(Bold = required to proceed)
A) Substrates & Fixturing
1. Form factor(s): Exact substrate sizes/shapes (e.g., 4″ wafers, 4″ squares;
thickness range)? Typically 1 inch or 1 cm squares
2. Pieces per run: Target count per load; any scale-up plan? Typically 1-2
B) Films, Processes & Performance
6. Materials list by method: Sputter (DC/RF): TBD ; E-beam: Si, C ; Thermal: TBD .
7. Thickness range & tolerance: Min/max (nm/µm) and allowed ±%.10-1000nm 20%
8. Uniformity targets: Within-substrate ±% and batch-to-batch ±% over loaded area.20%
9. Deposition rates: Desired rates (Å/s or nm/s) per process. 1 A/s to 1 nm/s
10. Substrate heating: Required setpoints (up to 350 °C), ramp, stability (±°C), dwell. Up to
350C, ramp 10 minutes, stable to 20C
11. Substrate bias: DC/RF bias needed? Voltage/current range or just “no bias.” Nothing
Special
C) Vacuum & Pumping
12. Base pressure requirement: 1 e-8 or better mbar/Torr (pre-process).
13. Process pressure windows: Sputter/evap ranges; throttle-valve control? Nothing special
14. Cryopump spec: Confirm ≥1500 L/s (on N₂) and which chamber(s) need cryo. OK as long as above pressure is reached
D) Sources & Power
15. Sputter magnetrons: “Two 2″” = exactly 2″, or is 4″/100 mm acceptable? Either
E) Process Gases & MFCs
16. Two MFC channels: Which gases and max flows? (e.g., Ar 200 sccm + O₂/N₂ 100 sccm). Standard gas, mostly inert
F) Monitoring & Metrology
17. QCM distribution: Total four sensors—how many in each chamber? Preferred controller (INFICON/SRS)? Multi-crystal heads? Need only one
18. Rate/thickness control: Closed-loop to PSUs or monitor-only with time/power recipes? Monitor only
G) Throughput & Operations
19. Throughput target: Parts/wafers per week at steady state. 1-3
H) Acceptance Criteria (FAT/SAT)
20. Quantitative pass/fail metrics: Base pressure; rate stability (± % over min);
thickness uniformity (±% over area); particles/defects; electrical/optical tests.
Nothing critical
I) Facilities & Site Readiness
21. Power: Voltage/phase/frequency and max available current (e.g., 480 V 3-phase, 480V OK, prefer 208V
22. Cooling: Flow, ΔT, pressure (or need a closed-loop chiller).closed loop
23. Compressed gases: CDA spec (dew point, oil-free), N₂ supply; house Ar/O₂/N₂
(bottles/bulk).Oil free, bottles
J) Commercials & Logistics
24. Architecture: Will a cluster (load-lock + separate sputter & evap chambers) be accepted, or must it be single-chamber? Either
| A) Substrates & Fixturing |
| B) Films, Processes & Performance |
| C) Vacuum & Pumping |
| D) Sources & Power |
| E) Process Gases & MFCs |
| F) Monitoring & Metrology |
| G) Throughput & Operations |
| H) Acceptance Criteria (FAT/SAT) |
| I) Facilities & Site Readiness |
| J) Commercials & Logistics |
File details come from the government source that posted it. Updated .