Call 0018 Quantum Device Fabrication and Characterization.docx

BROAD AGENCY ANNOUNCEMENT

BAA-VS-06-05

Air Force Research Laboratory/Directed Energy/Space Vehicles Directorate

PROPOSAL CALL ANNOUNCEMENT (CALL 0018)

BROAD AGENCY ANNOUNCEMENT TITLE: Space Electronics Open 5 Year Broad Agency Announcement

BROAD AGENCY ANNOUNCEMENT NUMBER: BAA-VS-06-05

PROPOSAL CALL ANNOUCEMENT (CALL) TITLE: Design and Fabrication of Semiconductor Nanoscale Devices to Enable Novel Optoelectronic, Extremely Low Power and High Performance Digital, Analog, Mixed Signal and RF applications.

PROPOSAL CALL ANNOUNCEMENT (CALL) NUMBER: 0018

TECHNICAL POINT OF CONTACT: The technical point of contact for this CALL is Dr. A. K. Sharma, AFRL/RVSE, Kirtland AFB, NM, Phone: 505-846-0165, Fax: 505-846-2290, Email: ashwani.sharma@kirtland.af.mil.

CONTRACTING POINTS OF CONTACT: Contracting points of contact for this CALL are:

Contract Specialist:

Sarah Hammond, Det 8 AFRL/RVKE, Kirtland AFB, NM, Phone: 505-846-5012, Fax: NONE, Email: sarah.hammond@kirtland.af.mil

Contracting Officer:

Annette Griego-Shaw, Det 8 AFRL/RVKE, Kirtland AFB, NM, Phone 505-846-6923, Fax: NONE, Email: annette.griego-shaw@kirtland.af.mil

REQUIREMENT DESCRIPTION: The Air Force Research Laboratory is soliciting proposals to execute a device design and fabrication program whose objective is to determine the ultimate performance, experimentally, of a variety of electronic devices based on nano scale dimensions whose characteristic lengths or widths enter into the quantum electronic regime. This requirement falls under Topic 1, subparagraph (1) of Space Electronics Technology Broad Agency Announcement VS-06-05 posted on 22 September 2006. See the following for detailed information:

Design and Fabrication of Semiconductor Nanoscale Devices to Enable Novel Optoelectronic, Extremely Low Power and High Performance Digital, Analog, Mixed Signal and RF applications.

The expected performance that has been theorized for quantum scale devices offers significant performance advantages in numerous areas of electronics. For example, electrons behave more like waves than particles, and so react to narrow paths, and the macroscopic nature of resistance, capacitance and inductance changes to a more exotic microscopic one. The band structure of semiconductors can be altered to effectively couple to photons at differing wavelengths of light, and the bandwidth (sub threshold swing) of transistors can be increased dramatically. The Space Electronics Branch is primarily interested in taking advantage of these performance improvements in applications such as high duty cycle processors and memories where Fowler-Nordheim gate and sub-threshold voltage leakage currents in planar based devices presently limit the performance of state of the art circuits as a result of increased power density resulting from high temperature operation of these circuits. Quantum effect devices including nanowire devices can be utilized in optoelectronic applications to vastly improve the bandwidth of digital interfaces and communication systems both inter- and intra-satellite. Nanoscale epitaxial growth processes offer improved material quality compared with subtractive (etching processes) including well defined crystal facet sidewalls with reduced scattering and recombination centers. Epitaxial growth also allows in-situ passivation to further isolate the active region. In collaborative work, these nanowire devices are being tailored for use in multi-spectral sensing applications spanning the spectrum from the infra-red into the visible range. These quantum scale devices can also be used to connect to self-assembled organic and inorganic particles in a bid to develop new optical and electronics approaches.

This RFP is centered on fabricating devices using state of the art lithographic processes and nanoscale epitaxy to investigate the carrier transport in nano-scale devices. The excitation of carriers can be either optical or electrical with the goal of producing an understanding of the carrier transport that can be utilized in a number of applications from optoelectronics, interfacing with self-assembled electronics, or ultra high speed and low power digital systems. The proposed research will be carried out in close interaction and coordination with the Electronics Foundations Research Section, AFRL/RVSEF.

ANTICIPATED FUNDING (Topic C2, Advanced Electronic Materials, Devices, and Circuits, (2) Modeling Of Advanced Materials For Space Electronics): Anticipated funding for this CALL (not per contract or award) is FY10: $100,000, FY11: $100,000, FY12: $100,000. This funding profile is an estimate only and will not be a contractual obligation for funding. All funding is subject to change due to government discretion and availability. A model contract will be provided to the apparent successful offeror for review and comment as part of the BAA solicitation and award process.

PERIOD OF PERFORMANCE (Topic C2, Advanced Electronic Materials, Devices, and Circuits, (2) Modeling Of Advanced Materials For Space Electronics): The anticipated period of performance for individual awards resulting from this call is thirty three (33) months for technical effort and three (3) months for final report submission.

PAGE LIMITATIONS: The technical proposal including the C-SOW shall be limited to five (5) pages single spaced, double-sided, 8.5 by 11-inch pages. Select an easy to read font no smaller than 12 pitch fixed or proportional font size 10 or larger. Smaller type may be used in figures and tables as long as it is clearly legible. The page limitation includes all information i.e., indices, photographs, foldouts (2 page), appendices, attachments, resumes, C-SOW, etc. Each printed side counts as one page. Blank pages, title pages, tables of content, lists, tabs or cover sheets are not included in the page count. The Government will not consider pages in excess of this limitation.

PROPOSAL DUE DATE AND TIME: The due date for proposals submitted in response to this CALL is no later than 1:00 p.m. MDT on 2 Aug 2010. Proposals for any other technology area identified in the baseline BAA will not be accepted at this time unless a CALL for proposals in that specific area is open. Proposals received after the due dates and times shall be governed by the provisions of FAR 52.215-1(c)(3).

PROPOSALS FOR FAR TYPE CONTRACTS SHALL BE SUBMITTED TO: Det 8 AFRL/RVKE, Attn: Sarah Hammond, 2251 Maxwell St SE, Bldg 424, Kirtland AFB NM 87117-5773. Proposals sent to any inappropriate address are ineligible for award. Proposals sent via facsimile or electronic means will not be accepted.

PROPOSALS FOR GRANT OPPORTUNITIES: All Broad Agency Announcements for basic research that may result in grants or cooperative agreements issued by this office will invite electronic proposal submission through Grants.gov APPLY. Please refer to the BAA solicitation under Additional Assistance Information for further instructions on submitting proposals electronically. Any electronic submission for a grant or cooperative agreement must be through Grants.gov. Other forms of electronic submission will not be accepted.

CALL AMENDMENTS: Offerors should monitor FedBizOps/EPS <http://www.fbo.gov> and/or Grants.gov/FIND <http://www.grants.gov> for any additional notices to this CALL that may permit extensions to the proposal submission date or otherwise modify this announcement.

ANTICIPATED TYPE OF CONTRACT/INSTRUMENT: The Air Force anticipates awarding a CPFF or Grant as a result of this CALL but reserves the right to award the instrument best suited to the nature of research proposed. A model contract will be provided to the apparent successful offeror for review and comment as part of the BAA solicitation and award process.

ANTICIPATED NUMBER OF AWARDS: The Air Force anticipates awarding one contract or one grant. However, the Air Force does reserve the right to make multiple awards or no awards pursuant to this CALL.

ANTICIPATED AWARD DATE: On or about 15 Oct 2010

INTENT TO PROPOSE: Potential offerors are requested to advise the contracting point of contact (by e-mail) if they intend to submit a proposal in response to this CALL. Such notification is merely a courtesy and is not a commitment by the offeror to submit a proposal.

DELIVERABLES ITEMS: This effort requires the patterned epitaxial growth of nano-scale devices, followed by optical and electrical characterization to empirically derive operating parameters. The nano-scale devices will then be utilized by RVSEF to incorporate into prototype applications to verify the efficacy of the concepts. The deliverable is a report on the empirical performance of various optical and electronic devices fabricated utilizing SOA lithographic processing techniques along with nanoscale epitaxial approaches.

OTHER RELEVANT INFORMATION:

1. Program security classification for this CALL is UNCLASSIFIED.

2. The Final Technical Report is assumed not to be under ITAR restrictions.

3. Government furnished property, equipment, or facilities needed, other than those identified in this CALL, should be specified in the proposal.

APPLICABILITY OF BASELINE BAA: All requirements of BAA-VS-06-05 apply unless specifically amended and addressed in this CALL as addressed below. In addition to ORCA, offerors shall use the Representations and Certifications (Current as of 14 Jan 08) provided with this CALL 0018. For complete information regarding BAA-VS-06-05, refer to BAA-VS-06-05 Solicitation 01 dated 22 September 2006 and as updated on 29 May 2007 and 27 Dec 2007 on FedBizOps http://www.fbo.gov/ <http://www.fedbizopps.gov/> and/or <http://www.grants.gov>. It contains information applicable to all CALLS issued under the BAA and provides information on the overall program, proposal preparation and submission requirements, proposal review and evaluation criteria, award administration, agency contacts, etc. Direct questions to the points of contact identified above. If the requirements in BAA-VS-06-05 and requirements addressed in CALL 0018 below are not provided, the proposal will be categorized as non-responsive to this CALL.