Attachment (B) Specifications.pdf
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- Attached to
- Custom Multi-layer Chips
- Solicitation number
- RFQ_467991
- Issued by
-
Department of Energy Office of Science
About this file
This document is a device specification for X-ray Multilayer Chips from Brookhaven National Laboratory, managed by Brookhaven Science Associates for the U.S. Department of Energy. The specification details precise technical requirements for a custom semiconductor chip design, including substrate composition of 200 um thick Silicon, die sizes of 15mm x 25mm, and 24 dies per wafer. Key technical specifications include a lateral critical dimension of 95 nm or smaller, line roughness less than 5 nm, placement accuracy within 10 nm between structures, and overlay accuracy of less than 15 nm (with a target of 5 nm). The target processing levels involve multiple layers of materials including SiO2, Ruthenium, and Tungsten, with specific thickness ranges for each layer. The delivery date is set for August 29, 2025, and the document is marked as controlled under U.S. Department of Commerce Export Administration Regulations.
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Text version
G P.O. Box 5000
Upton, NY 11973-5000 rookhaven Science Associates the U.S. Department of Energy
Device Specification:
Substrate:
Die sizes:
Number of dies/wafer:
Design Area Estimate:
Lateral critical dimension (nm):
Line roughness (rms):
Overall structural uniformity:
Placement accuracy:
Overlay accuracy:
Accuracy of the vertical dimensions:
Smallest feature size:
Target processing levels
Brookhaven" National Laboratory
Subject: Specification of X-ray Multilayer Chip managed by B for
MultilayerDesignChips 200 um thick Silicon 15mmx25mm -20184810 pmz layer 1 and layer 2 -2000000 pmz layer 3 95 nm or smaller <5 nm <5% of lateral critical dimension <10 nm, per die between structures <15 nm, target <5 nm
Better than 5 nm for target layers of W Note, rounding will occur at edges.
Work will be done to optimize the features compared to design. See example in Figure 1
50 nm SiOz (Top)
100-200 nm SiOz (Top-middle)
50 nm Ruthenium (layer 2)+ adhesion layers 100-200 nm SiOz (middle) 50 nm Tungsten (layer 1 base) + adhesion
Delivery August 29,2025
This information is controlled by the U.S. Department of Commerce Export Administration Regulations 15 CFR Parts 730-774 as EAR99 Technology.
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