Attachment (B) Specifications.pdf

Zone Plate and Imaging Test Pattern Specifications

Zone Plate Summary:

Outmost Zone Energy

(keV) Diameter (microns)

Beamline Frame size (mm2)

Center stop & array

Zone material and height (nm)

1 30nm 8 250 HXN 3-ID 4 x 4 No Pt, 850-950 2 60nm 8 250 HXN 3-ID 4 x 4 No Au or Pt, 750+750* 3 30nm 8 250 FXI 18-ID 4 x 4 No Pt, 850-950 4 30nm 8 250 FXI 18-ID 4 x 4 No Au or Pt, 550+550* 5 25nm & 50nm 0.3 500 SXN 29-ID-1 5 x 5 Yes, 2x2 Ni, 140 6 25nm & 50nm 1 320 SXN 29-ID-1 5 x 5 Yes, 2x2 Au or Pt, 200 7 60nm 0.7 359 CSX I23-ID-1 3.5 x 5 Yes, 3x1 Au, 180

* Double layer

Imaging Test Pattern Summary:

Minimum feature size Center Energy (keV)

Material and thickness

Beamline Frame size (mm2)

1 HCAL-30nm-Logo 8 >/= 550nm Au FXI 18-ID 5 x 5 2 SCAL-25nm-Logo 0.3-3 >/= 170nm Au SXN 29-ID-1 5 x 5

Zone Plates Specs

1.

Center design energy: 8 keV Outer diameter range (O.D.): 250 μm

Outer zone width (△Rn): 30 nm

Zone material: Platinum Zone thickness: 850 - 950 nm Membrane: 1000 nm SiN or SiC Chip frame size: 4 mm × 4 mm Center beam blocker: Not required Frame modification: Required Quantity: 1

2.

Center design energy: 8 keV Outer diameter (O.D.): 250 μm

Outer zone width (△Rn): 60 nm

Zone material: Gold or Platinum Zone thickness: 750+750 nm Membrane: 1000 nm SiN or SiC Chip frame size: 4 mm × 4 mm Center beam blocker: Not required

3.

Outer diameter (O.D.): 250 μm

Outer zone width (△Rn): 30 nm

Zone material: Platinum Zone thickness: 850 - 950 nm Membrane: 1000 nm SiN or SiC Chip frame size: 4 mm × 4 mm Center beam blocker: Not required

4.

Outer diameter (O.D.): 250 μm

Outer zone width (△Rn): 30 nm

Zone material: Gold or Platinum Zone thickness: 550+550 nm Membrane: 1000 nm SiN or SiC Chip frame size: 4 mm × 4 mm Center beam blocker: Not required

5.

Center design energy: 300 eV

Outer zone width (△Rn): 25 nm 50 nm

Outer diameter: 500 μm 500 μm Zone material Ni Zone thickness: 140 nm 0-order stop thickness: >2 μm Au

(2nd glued chip with 6 spokes and no membrane or directly added to the zone plates on a single chip)

0-order stop diameter: 150 μm Membrane thickness: 50 nm Membrane material: Si3N4 or SiC Silicon frame size: 5 × 5 mm2

Array size: 2 x 2 (4 zone plates per chip)* Array spacing: 1500 um

6.

1000 eV 25 nm 50 nm

320 μm 320 μm Au or Pt 200 nm

Center design energy:

Outer zone width (△Rn):

Outer diameter:

Zone material Zone thickness:

0-order stop thickness:

0-order stop diameter:

Membrane thickness:

Membrane material:

Silicon frame size:

Array size:

Array Spacing:

Quantity:

>2 μm Au (2nd glued chip without spokes or directly added to the zone plates on a single chip 120 μm 100 nm Si3N4 or SiC 5 × 5 mm2

2 x 2 (4 zone plates per chip) 1500 um

7.

700 eV 60 nm

350 μm Au 180 nm

Center design energy:

Outer zone width (△Rn):

Outer diameter:

Zone material Target zone thickness:

0-order stop thickness:

Membrane thickness:

Membrane material:

Silicon frame size:

0-order stop frame size:

Array size:

Quantity:

>2.5 μm Au 2nd chip glued (with or without spokes) 100 nm membrane 100 nm Si3N4 or SiC

3.5 × 5.0 mm2

3.0 x 4.0 mm2

1 x 1

Imaging Test Patterns

1.

Target energy: Hard X-ray Minimum feature size: 30 nm (50 nm pitch) - Star Patterns

30 nm (60 nm pitch) - Nested Ls 40 nm (80 nm pitch) - Varying Lines/spaces

Feature thickness: ≥ 550 nm gold Membrane: 1000 nm SiN or SiC Feature tonality: Positive (gold features) Pattern area: 250 μm x 250 μm Substrate dimensions: 5 mm x 5 mm Custom logo: Please provide design, if desired

(include BNL design)

2.

Target energy:

Minimum feature size:

Feature thickness:

Membrane:

Feature tonality:

Pattern area:

Substrate dimensions:

Custom logo:

Quantity:

< 1000 eV 25 nm (50 nm pitch) ≥ 170 nm gold 100 nm silicon nitride (Si3N4) or silicon carbide Positive (gold features) 250 μm x 250 μm 5 mm x 5 mm Included

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