Q&As 2.pdf
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- Attached to
- High Uniformity Sputter Deposition System Federal contract opportunity
- Solicitation number
- 80GSFC20Q0004
About this file
This document contains a solicitation for a high uniformity sputter deposition system. Key details include that NASA/GSFC requires a system for sputter depositing thin metal films with stringent requirements on film thickness uniformity and substrate cleanliness. The system must maintain deposition and cleanliness capabilities over many years with good throughput and minimal downtime. The solicitation is a request for quotation under simplified acquisition procedures. The contract type will be firm-fixed-price. The solicitation includes statements of work, delivery terms, and acceptance criteria. Quotes are due by March 11, 2020 and are to be emailed to the identified contracting officer. Questions are due by February 17, 2020. Evaluation will prioritize technical capability, price, and past performance. The place of acceptance is destination and FOB Destination quotes are preferred.
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Other files for this federal contract opportunity
| File | Type | Posted |
|---|---|---|
| Q and As 4.pdf | ||
| Q&As 3.pdf | ||
| Updated SOW High Uniformity Sputter Deposition Tool.pdf | ||
| Q&As.pdf | ||
| SOW High Uniformity Sputter Deposition Tool.pdf |
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QUESTION 21: The specs state, “The vacuum system will maintain a background pressure of 3 e-7 Torr (excluding argon) during sputter deposition of Nb.” How does NASA plan to measure this? With an RGA? Who provides the RGA and will this be a high pressure or differentially pumped unit?
ANSWER 21: NASA plans to measure with a low pressure RGA bolted to a conflat flange on the chamber and checks the chamber condition before and after deposition. For the purposes of this requirement, the vendor will only need to supply spare conflat ports. The SOW has been updated to reflect this.
QUESTION 22: There are two types of ion sources we can offer- End Hall ion source with broad beam and low ion energy (~300 eV)- or a Hot filament Kaufman ion source with more focused beam and energies from 50 eV to 1.2 keV. Do you have a preference?
ANSWER 22: The government has no preference.
QUESTION 23: Do you have a specific technique you want to use to vary the Nb stress?
ANSWER 23: The film stress changes with pressure during the deposition. The SOW has been updated to reflect the range of interest for the film stress tuning.
QUESTION 24: You request that the rough pump be turned off after roughing the main chamber. But then you request that this pump be used on the loadlock. The loadlock should ideally include a turbo pump that is backed by the roughing pump. The turbo pump is best to run continuously thus the rough pump cannot be shut off. Please comment.
ANSWER 24: The intent as stated in the SOW is to extend the life of the roughing pump within reason. The SOW has been updated to clarify that the roughing pump shall remain on while the turbo pump is being used on the load lock.
QUESTION 25: It sounds like you are asking for an RF bias cleaning capability with an RF power supply of at least 1.25 kW. This is very aggressive. Comments?
ANSWER 25: The SOW has been updated to remove the specifications on the power supply for the clean.
QUESTION 26: RF Source for Wafer Cleaning. Again this is unclear if you are asking for an
RF bias on the substrates or an RF ion source for cleaning. An RF ion source cannot be used to clean metals as it will short out and not function after a very short amount of time. Please clarify what you require.
ANSWER 26: NASA is considering both RF ion cleans and plasma cleans for the wafer cleaning. The SOW has been updated to reflect that the substrates will be oxidized substrates with minimal metal exposure.
QUESTION 27: The mentioned materials were Nb, Ti, Mo, and Al, so these can work with Inset or with Planer cathodes, but Inset cathodes provide better uniformities and better utilizations than the Planer design. Is there a preference?
ANSWER 27: No there is not a preference.
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