Ion Beam Etch and Ion Beam Deposition system
Closed Pre-Solicitation Posted
This opportunity was awarded. See the award notice from , or the latest solicitation from .
- Solicitation number
- AMD-SS23-09
- Agency
- National Institute of Standards and Technology Department of Commerce
- Responses due
- Set-aside
- No set-aside
Opportunity facts
- NAICS code
- 333242 Semiconductor Machinery Manufacturing
- PSC
- Not on record
- Place of performance
- Boulder, Colorado 80305, United States
Notice details come from SAM.gov. Updated .
About this opportunity
This pre-solicitation notice seeks an Ion Beam Etch and Ion Beam Deposition system to support research at the National Institute of Standards and Technology's Boulder Microfabrication Facility. The system must be capable of etching and depositing various materials on 150mm wafers with uniformity of 1.5% for deposition and 2% for etching. Respondents must provide documentation of a deployed system meeting these specifications. Responses are due by April 11, 2023 and should be emailed to forest.crumpler@nist.gov, including specifications and capabilities.
There is no set-aside designated. The associated NAICS code is 333242 for semiconductor and other electronic component manufacturing. Companies should include their size classification and socio-economic status in any response. The Boulder Microfabrication Facility requires this system to support its next generation device fabrication, though specific budget or quantity details are not provided.
Notice text
NO SOLICITATION DOCUMENTS EXIST AT THIS TIME
NIST-Boulder has a state-of-the-art research laboratory (the Katharine Blodgett Gebbie Building) to support the most sensitive research done at NIST. Included in this building is a Class 100 microelectronics fabrication facility, called the Boulder Micro-fabrication Facility (BMF). The BMF requires an Ion Beam Etch and Ion Beam Deposition (IBE/IBD) system in order to fabricate its next generation devices. The system must be a vacuum chamber with a load lock that can perform ion beam etching of substrates and deposit materials including but not limited to; Germanium (Ge), Magnesium Fluoride (MgF2), Tantalum Pentoxide (Ta2O5), Silicon Nitride (SiNx), Gold (Au), Copper (Cu), Tantalum (Ta), Silicon (Si), Aluminum (Al) and methane-based diamond-like carbon deposition in a manner that is consistent with methods used for (IBE/IBD) in the semiconductor industry.
In order to meet its research requirements, the BMF requires a system that can process on a substrate with lateral dimensions of a 150 mm SEMI spec wafer and that provides uniform etch and deposition rates.
Minimum Requirements
The tool must provide a deposition uniformity of better than 1.5 % (½ * range/mean) across a substrate with lateral dimensions of a 150 mm SEMI spec wafer that has one SEMI-standard flat at the bottom minus a 5 mm edge exclusion zone around the edge of the wafer and an etch uniformity of better than 2 % (½ * range/mean) across a substrate with lateral dimensions of a 150 mm SEMI spec wafer and one SEMI-standard flat at the bottom minus a 5 mm edge exclusion zone around the edge of the wafer. To meet this criterion, the contractor shall provide documentation of a deployed system, that is the same model in the bid, that can meet these specifications.
NIST is seeking responses from all responsible sources, including large, foreign, and small businesses. Small businesses are defined under the associated NAICS code for this effort, 333242, as those domestic sources with a size standard of 1,500 employees or less. Please include your company’s size classification and socio-economic status in any response to this notice.
Companies that provide equipment that can meet the stated requirements are requested to email a detailed report describing their products to forest.crumpler@nist.gov no later than the response date for this Sources Sought Notice. The report should include achievable specifications and any other information relevant to your product or capabilities.
Notice history
| Notice | Type | Posted |
|---|---|---|
| Purchase of an Ion Beam Etch and Ion Beam Deposition System | Award Notice | |
| Purchase of an Ion Beam Etch and Ion Beam Deposition System | Solicitation | |
| Ion Beam Etch and Ion Beam Deposition system | Pre-Solicitation |
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