Gallium Nitride Diode Wafer Fabrication
Closed Special Notice Posted
- Solicitation number
- 80GRC025CA030
- Responses due
- Set-aside
- No set-aside
Opportunity facts
- NAICS code
- 334413 Semiconductor and Related Device Manufacturing
- Place of performance
- Tewksbury, Massachusetts 01876, United States
Notice details come from SAM.gov. Updated .
About this opportunity
NASA Glenn Research Center has published a Special Notice for the procurement of Gallium Nitride diode wafer fabrication services to produce 7,000 high-performance Schottky diodes. The diodes are required for integration into high-power Rectenna arrays operating at frequencies of 10 GHz and above, with applications in high-frequency, high-power, and high-efficiency power rectification systems. NASA intends to issue a sole source contract to Raytheon Advanced Technologies of Tewksbury, Massachusetts, under the authority of FAR 6.302-1, citing that only one responsible source exists that can satisfy the agency's requirements. The procurement falls under NAICS code 334413 for Semiconductor and Related Device Manufacturing and involves commercial products under FAR Part 12. The Special Notice serves as a market research tool to determine whether other qualified sources exist that could compete for this requirement.
The primary objective of this procurement is to obtain cutting-edge semiconductor devices that meet stringent performance specifications including global cut-off frequency exceeding 40 GHz, specific insertion loss parameters, junction capacitance under 0.5 pF, and operational power handling capabilities above 3 watts at temperatures up to 300°C. Interested organizations must submit their capabilities and qualifications electronically to Ian Park at ian.park@nasa.gov no later than 12:00 PM ET on August 20, 2025. To be considered eligible, contractors must demonstrate that the required devices already exist in their catalog with current device measurements that meet the Statement of Work requirements, as NASA determined it would not be feasible for competitors to develop and deliver devices with the stated performance within the required timeframe. The government will evaluate submitted capabilities solely to determine whether to conduct the acquisition on a competitive basis, with the final decision remaining at the government's discretion and delivery required by September 2026.
Notice text
2 versions
Update #2 · Latest ·
NASA Glenn Research Center (GRC) has a requirement for a dedicated Gallium Nitride wafer fabrication run to provide 7000 high performance Schottky diodes for integration in high power Rectenna arrays operating at 10 GHz and above. These diodes must meet highly specific qualifications and produce cutting edge performance to enable high-frequency, high-power and high-efficiency power rectification. The device performance requirements outlined in the Statement of Work include global cut-off frequency, return loss, junction capacitance, operational power handling, current handling, and high-temperature operation. These devices must already exist in the vendors catalog and device measurements meeting the SOW requirements must be currently available or else it wouldn’t be possible to expect a competitor to deliver these devices with the stated performance within the required time frame.
NASA GRC intends to issue a sole source contract to acquire the related capabilities as outlined in the attached Statement of Work from Raytheon Advanced Technologies of Tewksbury, MA under the authority of FAR 6.302-1, only one responsible source and no other supplies or services will satisfy agency requirements.
The Government does intend to acquire a commercial product or commercial service using FAR Part 12.
Interested organizations may submit their capabilities and qualifications to perform the effort electronically via email to Ian Park (ian.park@nasa.gov) not later than 12:00pm ET on August 20, 2025. Such capabilities/qualifications will be evaluated solely for the purpose of determining whether to conduct this acquisition on a competitive basis. A determination by the Government not to compete this acquisition on a full and open competition basis, based upon responses to this notice, is solely within the discretion of the Government.
NASA Clause 1852.215-84, Ombudsman, is applicable. The Center Ombudsman for this acquisition can be found at : https://www.hq.nasa.gov/office/procurement/regs/Procurement-Ombuds-Comp-Advocate-Listing.pdf
Update #1 ·
NASA Glenn Research Center (GRC) has a requirement for a dedicated Gallium Nitride wafer fabrication run to provide 7000 high performance Schottky diodes for integration in high power Rectenna arrays operating at 10 GHz and above. These diodes must meet highly specific qualifications and produce cutting edge performance to enable high-frequency, high-power and high-efficiency power rectification. The device performance requirements outlined in the Statement of Work include global cut-off frequency, return loss, junction capacitance, operational power handling, current handling, and high-temperature operation. These devices must already exist in the vendors catalog and device measurements meeting the SOW requirements must be currently available or else it wouldn’t be possible to expect a competitor to deliver these devices with the stated performance within the required time frame.
NASA GRC intends to issue a sole source contract to acquire the related capabilities as outlined in the attached Statement of Work from Raytheon Advanced Technologies of Tewksbury, MA under the authority of FAR 6.302-1, only one responsible source and no other supplies or services will satisfy agency requirements.
The Government does not intend to acquire a commercial product or commercial service using FAR Part 12.
Interested organizations may submit their capabilities and qualifications to perform the effort electronically via email to Hunter Butkovic (hunter.c.butkovic@nasa.gov) not later than 12:00pm ET on July 14, 2025. Such capabilities/qualifications will be evaluated solely for the purpose of determining whether to conduct this acquisition on a competitive basis. A determination by the Government not to compete this acquisition on a full and open competition basis, based upon responses to this notice, is solely within the discretion of the Government.
NASA Clause 1852.215-84, Ombudsman, is applicable. The Center Ombudsman for this acquisition can be found at : https://www.hq.nasa.gov/office/procurement/regs/Procurement-Ombuds-Comp-Advocate-Listing.pdf
Files
| File | Type | Posted |
|---|---|---|
| Dedicated Diode Run SOW_v3.pdf |
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