Dedicated Diode Run SOW_v3.pdf
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- Attached to
- Gallium Nitride Diode Wafer Fabrication
- Solicitation number
- 80GRC025CA030
About this file
This Statement of Work (SOW) details NASA Glenn Research Center's requirement for a dedicated Gallium Nitride (GaN) wafer fabrication run to produce high-performance Schottky diodes for Rectenna arrays. The technical requirements specify the fabrication of 1 wafer lot containing over 7,000 devices with 8x30 um GaN Schottky diodes, with stringent performance targets including a global cut-off frequency > 40 GHz, insertion loss > -0.3 dB at 10 GHz, junction capacitance < 0.5 pF, and operational power handling > 3W. The diodes must be capable of operating up to 300°C with specific current and electrical characteristics at different bias voltages and temperatures.
The SOW indicates a delivery deadline of September 2026 to support NASA's research and development milestones. NASA will provide necessary design specifications to ensure proper component integration, with the expectation that the contractor will create a dedicated wafer mask set based on existing device/circuit designs, fabricate at least one wafer lot, and deliver packaged diode chips in waffle packs. The document is part of a sole-source acquisition process targeting Raytheon Advanced Technologies, with interested organizations able to submit capabilities and qualifications via email to Hunter Butkovic by 12:00 PM ET on July 14, 2025.
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Statement of Work (SOW)
1. Background The research and development of rectennas at NASA Glenn Research Center (GRC) may benefit from advanced semiconductor technologies and simulation techniques developed at an advanced Gallium Nitride Foundry. GRC needs a dedicated wafer fabrication run to provide diodes for integration in high power Rectenna arrays operating at 10 GHz and above.
2. Scope The contractor shall layout a dedicated wafer mask set (based on existing device/circuit designs), fabricate at least one wafer lot using the created mask set, and provide resultant diode chips.
3. Technical Requirements
• Diode Devices o Gallium Nitride (GaN) Schottky diodes that meet the following specifications:
o Part number: 8x30 um GaN Schottky diodes or equivalent o Quantity: 1 Wafer Lot
Fabrication run using created mask set. Resultant chips (from up to 8 wafers) to be packaged in waffle packs
Total of over 7,000 devices delivered o Best effort performance targets:
Global cut-off frequency (f−3dB) > 40 GHz Insertion Loss (S21) > - 0.3 dB at 10 GHz Junction capacitance < 0.5 pF at 5 MHz Operational power handling of > 3W of incident, continuous wave, power through the diode at 10 GHz Current at a 4V bias voltage > 380 mA at 25°C Current at a 2V bias voltage > 100 mA at 250°C Bare die with GSG probe pads and top microstrip gold contacts Operation up to 300°C where insertion Loss (S21) > - 1.0 dB at 10 GHz
4. Deliverables
• GaN diodes delivered within the required timeframe to support project milestones.
5. Period of Performance The required components shall be delivered no later than 9/2026 to prevent delays in research and development.
6. Government Furnished Information (GFI) NASA will provide the necessary design specifications to ensure proper integration of the components. If relevant, any provided device/circuit designs for inclusion on the dedicated wafer run will be design rule checking (DRC) compliant.
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