Wafer_Alignment_and_Bonding_System_Specifications_Document.pdf
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- Attached to
- Wafer Bonding System Federal contract opportunity
- Solicitation number
- N0017324RFIMB23
About this file
This document appears to be a technical specifications document for a Wafer Alignment and Bonding System required by the Naval Research Laboratory (NRL). The system must be capable of in-situ wafer alignment and bonding under ultra-high vacuum, with capabilities for 3", 4" and 6" semiconductor or glass wafers. The system must provide surface treatment, various bonding methods, and independent heating of top and bottom wafers. Specific requirements include ultra-high vacuum pumping, high compression force, precise wafer alignment, surface radical treatment, and anodic bonding capabilities. The contractor must have experience designing, fabricating, and installing such systems and provide a warranty, on-site installation, and training.
This technical specifications document appears to be related to a pre-solicitation for a "Wafer Bonding System" issued by the Department of the Navy, Secretary of the Navy, Office of Naval Research.
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| File | Type | Posted |
|---|---|---|
| RFI_Sources Sought_WaferBonding System.pdf |
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Text version
Wafer Alignment and Bonding System Specifications
Description: Code 6880 of the Naval Research Laboratory (NRL)has a requirement for a commercially available system that consists of a combined wafer alignment and bonding system to physically bond two or three semiconductors or glass wafers in-situ under ultra-high vacuum.
The system shall include wafer handling capabilities for 3”, 4” and 6” semiconductor or glass wafers. Surface treatment capabilities shall include radical treatment. Bonding capabilities shall include direct bonding with and without force, eutectic bonding, glass frit bonding, solder bonding, thermocompression bonding and anodic bonding with high voltage. The system shall provide the ability to heat wafers before or after alignment and bonding. The system shall be fully integrated with control software/hardware for automatic process control of all gas handling, vacuum and bonding features.
Specific Requirements:
• The contractor shall have a demonstrated ability to design, fabricate, and install ultra-high vacuum in-situ alignment and bonding systems.
• The ultra-high vacuum pumping system shall produce vacuum levels better than 5x10-7 mbar.
• The tool shall have chamber pressure control and gauges.
• The compression force shall be greater than 35,000 Newtons.
• The wafer alignment accuracy shall be less than 5 micrometers.
• The wafer alignment capability shall be operational in-situ under ultra-high vacuum conditions and provide motorized control of the platen x, y, z and theta movements.
• The alignment capability shall include an infrared source for wafer alignment of visibly-opaque wafers.
• Heating capability shall be at least 500 °C and shall be independently controllable for the top and bottom wafers.
• Wafer handling shall include capabilities for 3”, 4” and 6” semiconductor wafers.
• For direct wafer bonding, the tool shall include a central spring pin to initiate contact in the center of one of the wafers.
• The tool shall capable of surface radical treatment with noble gasses (for example., Argon) and vapor injection control for direct bonding (to hydrate the surface).
• For anodic bonding, the tool shall include a high voltage power supply with at least 2000 volts capability and a conductive graphite chuck.
• The tool shall have a bakeout heater to achieve improved vacuum.
• The contractor shall provide a warranty on the entire system (including parts and labor) for at least 1 year and a warranty on parts for at least 2 years.
• The contractor shall provide on-site installation and training.
Electronics Package shall include:
• An automatic mode where the PC-controlled software progresses through predetermined recipes and provide the following feedback to the user:
o Recipe and Progress o Vacuum system status o Miscellaneous indicators and buttons o Heaters status and chuck temperatures o Platens separation, force o Radical-activation status o High voltage supply status when in anodic bonding mode
• A manual operation mode that provides all of the above control and provides feedback to the user.
File details come from the government source that posted it. Updated .