ARL 25-19.pdf
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- Solicitation number
- W911QX-27-Q-A006
About this file
This is an Army Research Laboratory (ARL) Invention Disclosure document (ARL 25-19) describing a novel ultra-lightweight flexible high-K patterned metalized thin-film based dielectric material for RF microwave applications. The invention proposes using layered patterned metalized films (such as aluminized mylar) with grid-based patterns (rectangular or curvilinear) to create high-dielectric-constant materials that maintain lightweight and flexible properties. Unlike conventional ceramic-based high-K materials that are rigid, brittle, and heavy, this engineered approach allows local tuning of the dielectric constant by adjusting grid spacing in each layered film, with prototype demonstrations achieving dielectric constants ranging from 3 to 80 while preserving thin-film flexibility. The material is fabricated using laser depaneling systems to create patterns on aluminized mylar film, which are then stacked to reach desired thickness.
The invention has been verified through both simulation and measurement, with prototype samples demonstrating measured data matching simulation results. Primary military application includes development of next-generation anti-jamming multi-band GPS antennas. Commercial applications target flexible lightweight RF systems and components for homes, businesses, vehicles, and drones, including RF lenses, anisotropic substrates, and dielectric resonators. No related patents or publications exist, an embodiment is available for inspection, and current use focuses on multi-band anti-jamming GPS antenna development with future potential across flexible lightweight RF microwave systems. The invention addresses the gap between existing rigid, heavy ceramic high-K materials and the need for conformable, lightweight alternatives that enable new design form factors in RF microwave engineering.
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Invention Disclosure
ARL 25-19
TITLE OF INVENTION:
Ultra-lightweight Flexible High-K Patterned Metalized Thin-film Based Dielectric Material for RF Microwave Applications
EXECUTIVE SUMMARY OVERVIEW:
(The purpose of this overview is to provide a brief summarized overview of the invention as described in this invention disclosure document and a direct explanation on what is new about the invention and information about potential military and commercial uses)
1. What is this Invention?
(e.g., a short 3-sentence “summarized” description as a more “detailed” description will be required further into this invention disclosure)
This invention proposes a novel way to synthesize ultra-lightweight flexible high-k dielectric material. This engineered material can be realized by layering patterned metalized thin films, such as aluminized mylar. The pattern can be grid-based (rectangular or curvilinear). The dielectric constant can also be tuned locally by adjusting the grid-spacing in each layered metalized film. The proposed high-k dielectric material is a key component in developing the next generation of lightweight and flexible RF systems.
2. What is the basic premise of the design?
The premise of the high-k dielectric material is the patterned metalized thin-films. Unlike the conventional high-k ceramic-based material which is heavy rigid and brittle. The proposed engineered material is composed of layered patterned metalized films. The dielectric constant can also be tuned locally by varying the grid-spacing in each layered metalized film. The pattern determines the dielectric constant of the material which can be designed to achieve a wide range from low-k to high-k material and varies inversely with gap spacing.
3. What is new about this Invention?
Most high-k dielectric materials available in the market are ceramic-based materials. For ceramics are known to be heavy, rigid and brittle because of their strong directional ionic and covalent bonds. Ceramics can only be molded into rigid conformal shapes under high temperature and pressure. To address those issues, we proposed the use of stacking layered patterned metalized films to compose the material. The dielectric constant can also be tuned locally by varying the grid-spacing in each layered metalized film. Engineered high-k dielectric materials can be designed to achieve the same dielectric constant as ceramic-based materials, while maintaining a lightweight and flexible form as a thin-film.
4. Has this Invention been verified?
(e.g., does it exist, is it factual, is there a test module)
Yes, the concept has been verified in both simulation and measurement. We built prototype samples and measured them. The measured data matched with the simulation.
5. Identify Potential Military Uses of the Invention:
(if CTI exists, please mark accordingly)
The proposed high-k dielectric material is used in the development of the next generation of anti-jamming multi-bands GPS antenna.
6. Identify Potential Commercial Uses of the Invention:
The proposed high-k dielectric material can be used in the development of flexible lightweight RF systems and components for homes, businesses, vehicles and drones.
Components such as (RF lenses, anisotropic substrates, dielectric resonators, etc.
PUBLICATION OF THE INVENTION:
If a description of the invention has been published (publicly disclosed, verbally or in writing), list the type of publication and the dates. Please also provide a detailed explanation of the circumstances surrounding this external disclosure (e.g., what are the provisions of a funding agreement, etc.). Also, identify any further planned reports or publications. If none, so state.
N/A
LIST ANY KNOWN RELATED PATENTS, PUBLICATIONS or PATENT
APPLICATIONS:
Also identify any previous reports, drawings, publications, or correspondence describing or showing the invention. List any known closely related patents, patent applications, reports, publications, devices, or methods. If none, so state.
None
IS AN EMBODIMENT OF THE INVENTION AVAILABLE FOR INSPECTION?
If so, where?
Yes.
NATURE AND EXTENT OF PAST USE, PRESENT USE, AND FUTURE USE
AS WELL AS APPLICATIONS AND ADVANTAGES OF THIS INVENTION:
Past: None
Present: The ultra-lightweight flexible high-K dielectric material is being used in the development of the new multi-band anti-jamming GPS antenna.
Future: The proposed material can be used in the development of flexible lightweight RF microwave systems or components.
DETAILED DESCRIPTION OF THE INVENTION:
Provide the following information concerning the disclosed invention and in the indicated sequence:
A. Specifically describe the invention and its operation. You may use and attach copies of sketches, prints, photographs, paper, and illustrations, all of which should be signed, witnessed and dated. Alternatively, this form should be signed, witnessed and dated if the invention description is incorporated into this form. Use numbers and descriptive names in descriptions and drawings. For inventions that are methods list the steps involved in the method.
For inventions that are apparatus describe all the elements.
The dielectric material can be considered as high-k when its dielectric constant is greater than 3.9, which is the dielectric constant of silicon dioxide (SiO2). To achieve high-k in our proposed material, we utilize metalized patterned films. The pattern can be grid-based (rectangular or curvilinear). The dielectric constant can also be tuned locally by varying the gap spacing in the grid in each layered metalized film. In our fabrication process, we use the laser depaneling system to create the pattern on aluminized mylar film and then stack them to reach a desired thickness. By controlling the patterning, we can vary the dielectric constant from the host materials value to that of ceramics. In this prototype created with Mylar, the dielectric constant was tuned from 3 to 80 while maintaining the lightweight and flexible form of a thin film.
B. State the advantages of the invention over presently known devices, systems or processes. Also discuss/provide a background of the prior art.
Most high-k materials are either semiconductor or ceramic-based materials. They are not lightweight or flexible. Ceramics can only be molded into rigid conformal shapes under high temperature and pressure. Recently, engineered high-k materials have become more popular, thanks to advances in nanoparticle research. However, issues with weight and flexibility remain. In this invention, we propose a new way to synthesize a lightweight flexible high-k material. Instead of using nanoparticles, we utilize the patterned metalized films to achieve high-k while still maintaining a lightweight and flexible form as a thin film.
C. Discuss the problems which the invention is designed to solve, referring to any prior invention of a similar nature with which you may be familiar.
This invention is designed to achieve lightweight and flexibility in the high-k materials arena which are not feasible in the currently available high-k materials. The new lightweight flexible high-k material will allow the engineers to explore new form factors when designing RF microwave systems and components.
D. List all known and other possible uses for the invention.
This invention can be used to design a broad range of new form factors of RF microwave systems and components thanks to this next generation conformal, lightweight flexible material. Components such as (RF lenses, anisotropic substrates, dielectric resonators, etc.)
E. List the features of the invention that are believed to be novel – how does this invention differ from present technology.
The novelty of this invention is the use of patterned metalized film as mechanisms to achieve high-k, lightweight and flexibility. The pattern can be grid-based (rectangular or curvilinear). By controlling the gap spacing in the grid, we can tune the dielectric constant from low-k to high-k. This approach is different than the current state-of-the-art which mainly depends on the use of nanoparticles.
F. Please provide an abstract of your invention. This should be limited to no more than 250 words and will be used to facilitate discussion with the Invention Evaluation Committee.
In this invention, we propose the use of patterned metal on dielectric films to achieve high-k, lightweight and flexible materials. The pattern can be grid-based (rectangular or curvilinear). The dielectric constant of the material can be tuned from low-k to high-k and varies inversely with gap spacing. The dielectric constant can also be tuned locally by varying the patterning in each layered metalized film.
As proof of concept, we prototyped the sample material and then used it in a multi-band GPS antenna.
To fabricate the proposed material, we utilize the laser depaneling system. By controlling the power of laser system, we can create a desired metalized pattern on mylar film without melting it. The prototype is composed of stacked patterned aluminized mylar films. Both our simulation and initial measured data matched. We achieved our desired dielectric constant of 80 for our prototype sample, and simulations have shown we can achieve much higher values.
The high-k material is needed for this antenna design to utilize the outer cross-sectional aperture for current GPS frequencies, while leaving the inner cross-sectional aperture open for future GPS frequencies. Current high-k materials are rigid, inflexible, dense & costly to prototype. Ceramics can only be molded into rigid conformal shapes under high temperature and pressure. This high-k invention is conformal, flexible, lightweight & inexpensive to prototype.
The proposed high-k dielectric material can be used for next-generation RF systems and components for homes, businesses, vehicles and drones. RF components such as RF lenses, anisotropic substrates, resonators, etc.
| Invention Disclosure |
| EXECUTIVE SUMMARY OVERVIEW: |
| 1. What is this Invention? |
| 2. What is the basic premise of the design? |
| 3. What is new about this Invention? |
| 4. Has this Invention been verified? |
| 5. Identify Potential Military Uses of the Invention: |
| 6. Identify Potential Commercial Uses of the Invention: |
| PUBLICATION OF THE INVENTION: |
| IS AN EMBODIMENT OF THE INVENTION AVAILABLE FOR INSPECTION? |
| If so, where? |
| NATURE AND EXTENT OF PAST USE, PRESENT USE, AND FUTURE USE AS WELL AS APPLICATIONS AND ADVANTAGES OF THIS INVENTION: |
| DETAILED DESCRIPTION OF THE INVENTION: |
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