Specs.pdf
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- Solicitation number
- NB305000-26-00183
About this file
This document is a Statement of Work (SOW) specifying specialized silicon and silicon-germanium wafer products to be delivered to the National Institute of Standards and Technology (NIST) in Gaithersburg.
The procurement includes two base line items and five option line items for engineered wafer materials. Line Item 0001 requires 15 wafers of thin silicon and SiGe layers on silicon (Spec 1) featuring a seven-layer film stack with alternating Si and Si0.7Ge0.3 compositions, each 10±2 nm thick, on a 525 µm phosphorus-doped silicon substrate. Line Item 0002 requires 15 wafers of the same material system but with different specifications (Spec 2), including varied layer thicknesses (20-40 nm) and germanium compositions (Si0.55Ge0.45, Si0.70Ge0.30, Si0.85Ge0.15). Option line items provide flexibility for future orders: Option 1 covers thin doped silicon (up to 1 µm, 5 layers maximum), Option 2 covers thick doped silicon (up to 10 µm single layer), Option 3 covers isotopically enriched 28Si (up to 100 nm), Option 4 covers thin Si/SiGe superlattices (up to 250 nm), and Option 5 covers thick relaxed SiGe on buffered silicon substrates (up to 10 µm). All wafers must be 100 mm diameter, double-side polished, <100> orientation with SEMI standard flats, and 525 µm thick. Option line items specify a minimum lot size of 10 wafers with configurable parameters including dopant type, resistivity, film stack composition, and thickness to be determined at time of modification. Deliverables for base line items are due within 20 weeks of award, with future option deliveries due within 20 weeks of option modification.
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Line Item 0001:
Description: “Thin” Si and SiGe layers on Si – Spec 1 Quantity: 15 wafers
1. Substrate
1.1. Prime double side polished (DSP) silicon
1.2. Orientation: <100> with SEMI standard primary wafer flat
1.3. Thickness: 525 µm ± 25 µm
1.4. Dopant: phosphorus, resistivity range 1 Ω∙cm to 100 Ω∙cm
2. Film Stack per table below
Layer Thickness [nm] Composition [at] Dopant [at∙cm−3]
7 10 ± 2 Si B, 2×1014 to 5×1015
6 10 ± 2 Si0.7Ge0.3 B, 5×1019 to 5×1020
5 10 ± 2 Si B, 2×1014 to 5×1015
4 10 ± 2 Si0.7Ge0.3 B, 5×1019 to 5×1020
3 10 ± 2 Si B, 2×1014 to 5×1015
2 10 ± 2 Si0.7Ge0.3 B, 5×1019 to 5×1020
1 10 ± 2 Si B, 2×1014 to 5×1015
Substrate
Line Item 0002:
Description: “Thin” Si and SiGe layers on Si – Spec 2 Quantity: 15 wafers
1. Substrate
1.1. Prime double side polished (DSP) silicon
1.2. Orientation: <100> with SEMI standard primary wafer flat
1.3. Thickness: 525 µm ± 25 µm
1.4. Dopant: phosphorus, resistivity range 1 Ω∙cm to 100 Ω∙cm
2. Film Stack per table below
Layer Thickness [nm] Composition [at frac] Dopant [at∙cm−3]
7 25 ± 5 Si
B, 2×1014 to 5×1015
6 20 ± 5 Si0.55Ge0.45
5 25 ± 5 Si
4 30 ± 5 Si0.70Ge0.30
3 25 ± 5 Si
2 40 ± 5 Si0.85Ge0.15
1 25 ± 5 Si
Substrate
Line Item 0003: OPTION LINE ITEM 1 Description: “Thin” doped Si on Si Quantity: At least 10 wafers, lot size specified at time of order
1. Fixed Parameters
1.1. Substrate: 100 mm prime double side polished <100> Si wafers, 525 µm thick, SEMI standard flats.
1.2. Film stack: Fully coherent Si with B and Ph dopants at concentrations up to 5×1020 cm−3 (atomic, no requirement for electrically active). Total film stack thickness up to 1 µm with up to 5 layers, with no layers thinner than 10 nm.
1.3. Minimum lot size: 10 wafers
2. Parameters configurable at time of Modification
2.1. Substrate resistivity: The dopant (B, N, Ph, As, and Sb) and target resistivity (within ±10×)
2.2. Film stack: The thickness and doping of each layer
2.3. Lot size: Minimum order quantity if 10 wafers, but additional wafers of the same lot may be ordered with an additional per wafer cost.
Line Item 0004: OPTION LINE ITEM 2 Description: “Thick” doped Si on Si Quantity: At least 10 wafers, lot size specified at time of Modification
1. Substrate: 100 mm prime double side polished <100> Si wafers, 525 µm thick, SEMI standard flats.
1.1. Film stack: Fully coherent Si with B and Ph dopants at concentrations up to 5×1020 cm−3. Total film thickness up to 10 µm in one layer.
1.2. Minimum lot size: 10 wafers
2. Parameters configurable at time of order
2.1. Substrate resistivity: The dopant (B, N, Ph, As, and Sb) and target resistivity (within ±10×)
2.2. Film stack: The thickness and doping of the doped Si layer
2.3. Lot size: Minimum order quantity if 10 wafers, but additional wafers of the same lot may be ordered with an additional per wafer cost.
Line Item 0005: OPTION LINE ITEM 3 Description: Isotopically enriched 28Si on Si Quantity: At least 10 wafers, lot size specified at time of Modification
1. Fixed Parameters
1.1. Substrate: 100 mm prime double side polished <100> Si wafers, 525 µm thick, SEMI standard flats.
1.2. Film stack: Fully coherent Si or 28Si with B, N, and Ph dopants at concentrations up to 5×1020 cm−3. Total film thickness up to 100 nm with no layers thinner than 5 nm.
1.3. Minimum lot size: 10 wafers
2. Parameters configurable at time of order
2.1. Substrate resistivity: The dopant (B, N, Ph, As, and Sb) and target resistivity (within ±10×)
2.2. Film stack: The thickness, doping, and isotopic composition of each layer.
Line Item 0006: OPTION LINE ITEM 4 Description: “Thin” Si and SiGe layers on Si Quantity: At least 10 wafers, lot size specified at time of Modification
1. Fixed Parameters
1.1. Substrate: 100 mm prime double side polished <100> Si wafers, 525 µm thick, SEMI standard flats.
1.2. Film stack: Fully coherent Si and Si1-xGex superlattices where x is between 0.1 and 0.4. Total film thickness up to 250 nm with no layer thinner than 5 nm. B and Ph dopants at concentrations up to 5×1020 cm−3.
1.3. Minimum lot size: 10 wafers
2. Parameters configurable at time of order
2.1. Substrate resistivity: The dopant (B, N, Ph, As, or Sb) and target resistivity (within ±10×)
2.2. Film stack: The thickness, Ge composition, and doping of each layer
2.3. Lot size: Minimum order quantity if 10 wafers, but additional wafers of the same lot may be ordered with an additional per wafer cost.
Line Item 0007: OPTION LINE ITEM 5 Description: “Thick” SiGe on buffered Si Quantity: At least 10 wafers, lot size specified at time of Modification
1. Fixed Parameters
1.1. Substrate: 100 mm prime double side polished <100> Si wafers, 525 µm thick, SEMI standard flats.
1.2. Film stack: Virtual substrate created by relaxed buffer layer(s) of SiGe with a fully relaxed (relative to Si) Si1-xGex layer on top where x is between 0.1 and 0.4. Thickness of the relaxed SiGe film thickness less than 10 µm.
1.3. Minimum lot size: 10 wafers
2. Parameters configurable at time of order
2.1. Substrate resistivity: The dopant (B, N, Ph, As, or Sb) and target resistivity (within ±10×)
2.2. Film stack: Relaxed SiGe thickness, Ge composition, and doping of the relaxed SiGe layer. Vendors may create a virtual substrate with layers of SiGe buffers that matches the needs of the specified relaxed SiGe layer.
2.3. Lot size: Minimum order quantity if 10 wafers, but additional wafers of the same lot may be ordered with an additional per wafer cost.
I. SCHEDULE OF DELIVERABLES
Define all deliverables and indicate (1) the quantity desired; (2) the format in which each deliverable is to be supplied; (3) the delivery date (based on the number of weeks/days); (4) the place of delivery. The context of each deliverable shall be clear.
Deliverable Number Description Quantity Due Date
Place of Delivery
1 CLIN 001
CLIN 002
15 wafers 15 wafers
Within 20 weeks of award
NIST Gaithersburg
2 Future Orders Within 20 weeks of option modification
NIST Gaithersburg
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