SOW Sensor Req 329751 v1.pdf
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- Attached to
- Silicon Sensor Wafers
- Solicitation number
- 0000329751
- Issued by
-
Department of Energy Office of Science
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SLAC NATIONAL ACCELERATOR LABORATORY • 2575 SAND HILL ROAD • MENLO PARK • CALIFORNIA • 94025 • USA Operated by Stanford University for the U.S. Department of Energy
Specifications for pixellated, 500-micron-thick, silicon sensor wafers (req. 329751)
June 1, 2022
Specifications:
1) Wafers
a. Diameter of 150 millimeters
b. Wafer thickness of 500 microns +/- 10 microns
c. Float-zone silicon
d. Phosphorus, n-type material
e. Resistivity of greater than 6,000 Ohm-cm
f. Double sided polished
g. Crystal orientation is (100)
2) Photomasks
a. Contact method
b. One-to-one scale
c. 6 distinct mask plates and two copies of each mask
d. Masks retained by vendor in cleanroom conditions for a period of ten years
3) Process
a. 24 wafers processed
b. 5 front side lithography steps
c. 1 back side lithography step
d. At least 2 front side and 1 back side implants/diffusions
e. Aluminum films on both wafers sides
f. Front side top layer dielectric passivation
4) Quality
a. Full depletion voltage < 150V
b. Reverse bias breakdown voltage > 300 V
c. Vendor will provide test structures
d. Vendor will measure breakdown and leakage currents
e. Vendor will provide a report on the breakdown and leakage behavior
f. Meet ISO 9001
g. Shipped in antistatic containers
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