SOW for WaferBonder.pdf

STATEMENT OF WORK

Semiconductor Wafer Bonding System

PCN:

Background The GSFC Detector Development Laboratory (DDL) has a requirement to acquire a semiconductor wafer bonding system. The system is used to bond micro-electronic chips and wafers with precision temperature, pressure, and atmosphere control and registration over the entire bond process. The wafer bonder is an essential tool for advanced device fabrication projects under development and in production in the Detector Systems Branch at GSFC. In particular, this equipment is critically needed for the technology development and production of sub-kelvin cryogenic detectors, MEMS optical and microfluidic sensors and actuators and optical components. The wafer bonder is used to precisely and accurately bond silicon and/or other wafer materials (glass, GaAs, Quartz, pyrex etc) necessary for the fabrication of devices built in the DDL. The wafer bonder will enable bonding in wafers from 100mm to 200 mm in diameter in a single system allowing for faster throughput and larger detector focal planes than is currently achievable.

Objectives The objective of this project is to procure an semiconductor wafer bonding system.

Scope The scope of this work includes production and delivery of the semiconductor wafer bonding tool. Additionally, the supplier will assist in installation and verification of the tool in the Detector development laboratory as well as training NASA personnel on tool operation. The bonder consists of a vacuum system, two independent temperature-controlled bond plates, a means for applying pressure to the plates, a high voltage supply for anodic bonding, as well as a wafer transport fixture that is compatible with a separate alignment tool for aligning the wafer stack prior to bonding. The wafer bonder also includes computer hardware and software for control and automated operation of bonding recipes that are run on the tool. Two or more wafers (Si, pyrex, SiC, etc) are aligned and clamped together and placed between the bond plates. The upper and lower bond plates are heated and a force is applied to the wafer stack between the plates pressing the wafers together causing the wafers to adhere. Alternatively, in anodic bonding a high voltage is applied to the wafers while the current is monitored to verify adhesion of the wafers. The wafer bonder in this procurement shall be capable of thermocompression, epoxy, polymer, eutectic and anodic bonding processes.

Tasks or Requirements The Supplier shall insure that the Wafer Bonder is equipped with the following equipment and meet the following requirements prior to Acceptance of System:

1. Wafer Bonder Overview

1.1. A brand new unit with at least 10 similar commercially available units working in field is required; no used equipment, rebuilt systems or accessories or custom systems, are acceptable.

1.2. The Wafer Bonder shall meet current industry standard (SEMI S2) requirements for safety including the use of Emergency Off (EMO) panic buttons.

1.3. The wafer bonder shall conform to UL61010-1: Electrical Equipment for Laboratory

1.4. The tool shall include all hazardous labeling in English.

1.5. The tool shall be no larger than 0.805m x 1.30m footprint.

1.6. The wafer bonder shall be compatible with a Class 100 clean room and all exposed parts cleaned at the factory to remove dust, grease, or debris.

1.7. The supplier shall provide technical support of the equipment.

1.8. The wafer bonder shall operate from 120/208V 3phase, 50/60Hz with power consumption < 12.5 kW.

1.9. Compressed dry air < 10 bar input 130 L/min.

2. Bonding system

2.1. The bonding system consists of two plates over which is applied an external force. Each plate’s temperature is controlled separately.

2.2. Cooling of the top plate is passive while cooling of the bottom plate is active (see section 5 cooling).

2.3. The system shall be capable of bonding wafers with force up to 20kN with force accuracy at minimum 200N and +/- 40N or 3% whichever is greater. The input force shall be pneumatically controlled. The applied force between the wafers shall be independent of the environmental pressure set by the vacuum system.

An electronic pressure regulator shall be included for controlling contact force.

2.4. The bonding system shall include an automatic wedge error correction procedure to ensure parallelism of the wafer surfaces prior to bonding to enable high bond force uniformity between the wafer pairs. Opening and closing the bond chamber shall not affect the parallelism of the wafer bond plates during bonding operation.

Wedge errors are compensated by the wedge error correction system. Wedge correction shall be an automated process ensured without requiring user input through measurements via shims or other mechanical measurements.

2.5. Pressure uniformity shall be demonstrated with pressure sensitive films. The vendor shall demonstrate force accuracy of 300N or +/- 5% whichever is greater depending on the input pressure from the average force measured on at least three loadcells positioned in the bonding chamber.

2.6. Bonding pressure shall be set by the computer control recipes.

2.7. The system shall enable controlled temperature bonding up to 450C.

Temperature accuracy shall be < +/- 1.2% or +/- 2C which ever is greater. Both top and bottom heaters shall be provided with independent temperature control.

2.8. The bonding system shall be compatible with adhesive, thermocompression, eutectic and anodic bonding processes (100mm).

2.9. The pressure disk for 100mm wafer bonding shall be silicon nitride, and compatible with anodic bonding. The 150 mm and 200 mm wafer bonding pressure disks shall be titanium. The supplier shall provide as an option a quote for pressure disks compatible anodic bonding for both 150 and 200mm wafer pairs. Purchase of the additional pressure disks are at the discretion of NASA.

2.10. Swapping between configurations for bonding different size wafers shall simply require replacing the pressure disks and bond chucks.

2.11. The bonding system shall have anodic bonding capability. Bond monitor for continuous display of bond parameters including high voltage power supply 2000V/50mA, display of the bond electric current with resolution of 20 µA, can capability to set wait commands for current value or charge.

3 Sample handling

3.1 The tool shall be compatible with manual load and unload of bond chucks and wafers. A wafer handling tool compatible with 100 – 200 mm wafer sizes shall be included for loading and unloading the wafers.

3.2 The wafer bonder shall enable bonding of pre-aligned wafer pairs of 100mm, 150mm and 200mm in a single tool. The wafer bonder shall also be capable of bonding smaller wafers or chips through mechanical alignment.

3.3 The wafer bonder shall include a fixture or fixtures for clamping wafers pairs together in an aligned state prior to bonding. The fixtures shall be compatible with 100mm, 150mm and 200mm wafers sizes. The alignment fixtures shall be compatible with a wafer-to-wafer alignment system that enables optical alignment of the wafer stack prior to transporting to the bonding system for each of the wafer sizes (100mm, 150mm and 200mm).

3.4 The supplier shall include as an option, optional fixtures for mechanical alignment of 100mm, 150mm and 200mm wafer sizes. These items can be quoted separately. Purchase of the mechanical alignment fixtures shall be optional at the discretion of NASA GSFC

3.5 The fixtures shall include a means such as a spacer shim to provide a gap between the wafer pairs to enable pumping of residual gas between the wafers prior to bonding. Removal of the spacer shims shall be accomplished in sequential manner such that the wafer pair remains partially clamped while individual spacers are removed. The spacers and the clamps shall be separate mechanisms to minimize alignment shift when removing the spacers.

3.6 The 100mm wafer clamping fixtures shall be compatible with anodic wafer bonding.

4 Computer interface and associated software

4.1 The wafer bonder shall include a computer interface for control of the system and logging of all process and machine state. The computer control shall provide a self-diagnostic during machine start-up, automatic state initialization of all motors, position end switches and sensors and pneumatics.

4.2 The computer shall run Windows based operating system.

4.3 The computer shall include a solid state drive, USB connections and DVD for data backup, keyboard, and monitor.

4.4 The computer interface shall control all operation of the tool including chamber pressure for initial pump down, chamber overpressure during bonding, venting, bond pressure, top and bottom heater temperature, and anodic bonding voltage and current and charge.

4.5 The computer shall record process conditions for display and visualization and for process analysis for printing process charts.

4.6 The computer/software shall automatically create and store process data files during machine processing.

4.7 The software shall include a graphical user interface compatible with SEMI E95.

4.8 Recipe programming shall be simple drag and drop programming.

4.9 Software shall include password protection to various access levels (user, tool owner, maintenance).

4 Vacuum System

4.1 The wafer bonder shall include a vacuum system with demonstrated base pressure of less than 1e-5 mbar.

4.2 The vacuum system shall include a roughing pump and a turbo molecular pump.

4.3 The roughing pump shall operate oil-free and capable of maintaining chamber vacuum of 0.1 mbar absolute pressure.

4.4 A vacuum gauge shall be included to display chamber vacuum pressure on PC.

4.5 Pump out and vent of the vacuum system shall be software controlled.

4.6 The vacuum system shall enable bonding in pressures above atmosphere through bleeding back a process gas into the chamber. The tool shall be capable of overpressure bonding up to 1.3 bar with a minimum of 1 additional process gas such as N2, He, Ar, or forming gas. The over pressure system shall include a high-purity pressure regulator for reduction of process gas from a maximum of 10 bar to 0.5 – 2 bar. The process gas line shall include a digital pressure gauge from 0 – 10 bar to manually check process gas pressure.

5 Cooling

5.1 Active cooling of the bottom heater shall be included. The system shall not require any external water supply.

5.2 The cooling system shall be a closed loop system water supply to air heat exchanger.

5.3 The cooling temperature shall include adjustable temperature control from 5 C to

40C with temperature stability of +/- 0.1C and cooling capacity of up to 4.7kW.

The cooling system shall include a high-pressure pump of up to 5 bar.

5.4 The wafer bonder/cooling system shall include a drain pan set with water leakage sensor.

5.5 Cooling of the bottom plate alone shall be demonstrated from 400C to 100C at rate 25C/min.

4 Installation and Training

4.1 The price of the system shall include installation and calibration at Goddard Space Flight Center (GSFC). Installation at GSFC shall include a demonstration that the tool is functioning within compliance and within specifications. The demonstration shall include a supplier generated qualification report documenting the performance of the system.

4.2 The price of the system shall include crating and delivery of the instrument to Goddard Space Flight Center along with any customs or tariff fees.

4.3 The supplier shall provide all necessary labor and personnel for installation and parts assembly of the wafer bonder at GSFC. GSFC technicians shall provide all facilities connections for the tool as specified by the supplier.

4.4 Should foreign nationals be required to assist in installation and/or training the supplier will provide a minimum of 45 days notification to ensure visitor badges can be supplied.

4.5 The supplier shall inform GSFC of the required number and sizes of wafers as well as process chemicals and metrology requirements for onsite testing and verification of conformance at least 45 days prior to delivery of the system.

4.6 At the completion of installation and demonstration, the Supplier shall provide on-location operational training to at least 3 GSFC engineers at GSFC.

5 Documentation and Warranty

5.1 A full set of all written documentation shall be provided. This shall include user manuals or equivalent as well as copies of any software, and any manuals for the software included with the system. This documentation shall be received by GSFC with the system hardware.

5.2 The Supplier shall offer GSFC a minimum of one year warranty for Parts and Labor. The supplier shall provide options for extended warranty if available under standard commercially available terms. The warranty period will begin upon acceptance of the system.

5.3 The supplier shall provide a quote for preventative maintenance service visit

Deliverables or Delivery Schedule Deliver complete specified system (as described above) and in accordance with the below deliverables table.

Item No. Deliverable Delivery Date Delivery Method

1 Final design configuration of wafer bonder

__10_ days after contract award

Electronic Format/ Contracting Officer’s Representative (COR)

3 Functional test of Wafer bonder tool at contractor’s facility

_10 months after contract award

Electronic Format/Contracting Officer’s Representative (COR) with in-person trip to contractor facility to verify the test.

4 Delivery of tool to GSFC __1_months after acceptance of functional test

5 Assembly, installation and acceptance Test of Tool at GSFC facility

1 month after delivery of tool to

GSFC

Demonstration of performance functionality at GSFC facility

6 User Training for wafer bonding tool operation

1 months after delivery of tool to

GSFC

Demonstration by technician at GSFC facility

Set up and install all components at GSFC Detector Development Laboratory.

1. Demonstrate system with specified performance/acceptance criteria (described above). Acceptance of system will be conditional upon successful demonstration of functions.

2. Equipment warranty on parts and labor for at least one year.

3. The contractor shall crate and ship the approved unit to Goddard Space Flight

Center, Building 30, 8800 Greenbelt Road, Greenbelt Maryland 20771

Government-Furnished Equipment and Government-Furnished Information No Government-furnished equipment (GPE) and Government-furnished information (GFI) will be required.

Security The Supplier will make every effort to provide a US Citizen for the installation and training at GSFC. If a US citizen is not available and a foreign national is required by the supplier to assist in the onsite installation at GSFC, the Supplier shall provide security information for badging purchases to NASA at least 30 days prior to expected visit.

Foreign nationals shall not work hours outside of 9am to 5pm on GSFC Center and shall not be granted access for more than 30 days in a calendar year.

Place of Performance The construction of the Wafer Bonding system shall be performed at the Supplier’s facilities.

The Final Acceptance, Installation and Training shall be performed at NASA/GSFC, Greenbelt, Maryland.

Period of Performance

13 months after contract award.