SLAC Req-334510-SOW-v1.pdf

Flip Chip Bonding of Back-Illuminated CMOS Image Sensors to Read-Out ASICs Statement of Work

Requisition # 334510 SLAC National Accelerator Lab December 15, 2022

1) Layout integration for read-out-circuit wafer

2) Fabrication of 9 inch lithography mask plate

3) Layout integration for CMOS Image Sensor wafer

4) Fabrication of 9 inch lithography mask plates

5) Read-out wafers – sputter seed layer of TiW/Cu

6) Photolithography for under-bump metal and bumps on Read-Out wafers

7) Electroplating of lead-free solder bumps and bump reflow

8) Inspection of bumps and dicing of read-out-circuit wafers

9) CMOS Image Sensor wafers – bond to temporary support wafer to protect entrance window

10) CMOS Image Sensor wafers – sputter seed layer of TiW/Cu

11) Photolithography for under-bump metal

12) Electroplating of under-bump metal

13) Remove temporary support wafer from CMOS Image Sensor wafer

14) Inspection of under-bump metal and dicing of CMOS Image Sensor wafer

15) Flip chip bonding of 120 modules with 1 readout-circuit chip to 1 CMOS Image Sensor chip in a 1x1 arrangement using known-good die based on inspections in tasks 8 and 14

16) X-ray inspection of all bonded modules

17) Shipment of all modules and unused wafer parts to SLAC

SLAC will supply:

Design for Read-Out circuit chips and wafer stepper parameters Design for CMOS Image Sensor chips and wafer stepper parameters

Three (3) readout-circuit wafers 200mm in diameter and 700 microns thick Four (4) back-illuminated, CMOS Image Sensor wafers 200mm in diameter and 115 microns thick with delicate, thin entrance window on backside

Technical Specifications

1. Lead-free solder bumps

2. Bump yield better than 99%

3. Bump pitch is 50 microns by 50 microns

4. Readout circuit chip size is about 2cm by 2cm

5. CMOS Image Sensor chip size is about 2cm by 1 cm

6. Exposed aluminum pads on both sensor and circuit chips

7. Sensor wafers have a thin entrance window which must be protected from mechanical damage during processing

8. Sensors are high-carrier lifetimes, float zone silicon and must be protected from mid-bandgap contaminants