PR_68_8021_25_SIMS_Specifications.pdf
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- Solicitation number
- N0017325RFIMB10
About this file
This is a technical specifications document for a Secondary Ion Mass Spectrometer (SIMS) Analysis System being sought by the Department of the Navy's Office of Naval Research. The document outlines requirements for a SIMS system that will be used to analyze semiconductor materials and epitaxial layers with high precision for detection and quantification of dopant species, epitaxial layer structure, and isotopic analysis.
The required system must include specific capabilities including both dynamic SIMS (depth profiling) with 1e16 cm-3 sensitivity limit and static SIMS (surface) measurement modes, as well as Secondary Neutrals Mass Spectrometry (SNMS). The system must feature multiple ion gun primary beams (Cesium, Oxygen, and Argon), ability to measure 100mm diameter wafers and 20mm thick samples, simultaneous multiple sample loading capability, load lock system, UHV main chamber with bake-out capability, sample heater, interior camera, electron flood gun, contamination reduction method, and oxygen flood manifold. The specifications also require comprehensive control and analysis software, spectral libraries, on-site installation and training, and a minimum 12-month warranty on parts and labor.
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Secondary Ion Mass Spectrometer (SIMS) Analysis System
Description: Secondary Ion Mass Spectrometry (SIMS) is the method of eroding a material surface with a primary ion beam and measuring the mass of the secondary ions removed from the material being analyzed. Purchase of a Secondary Ion Mass Spectrometer (SIMS) is desired for analysis of semiconductor materials and epitaxial layers with high precision for detection and quantification of dopant species, epitaxial layer structure, and isotopic analysis.
The SIMS analysis system shall include the following capabilities:
• Dynamic SIMS (depth profiling) measurement mode with a demonstrated sensitivity limit of
1e16 cm-3
• Static SIMS (surface) measurement mode
• SNMS: Capability to measure sputtered neutrals for Secondary Neutrals Mass Spectrometry
(SNMS)
• Measurement using a Cesium ion gun primary beam (solid source)
• Measurement using an Oxygen ion gun primary beam (gas source)
• Measurement using an Argon ion gun primary beam (gas source)
• Measurement capability of a 100 mm diameter wafer
• Measurement capability of a 20 mm thick sample
• Capability to load multiple samples simultaneously (10 x 10 mm and 25 x 25 mm)
• Load lock for sample pump-down
• UHV main chamber with bake-out capability
• Sample heater for water/hydrocarbon removal
• Interior camera
• Electron flood gun to mitigate sample charging
• Method to reduce residual gas contamination (titanium sublimation pump [TSP] or liquid nitrogen trap [LN2])
• Sample Oxygen flood manifold for topography control
• All necessary control and analysis software
• Include library of spectra for mass interference and isotopic ratios
• On-site installation and training
• Minimum 12 month warranty on parts and labor
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