Attachment 1- Requirement Specifications.pdf

High-Resolution Thermoreflectance Device Imaging System

Description: Thermoreflectance device imaging is the method of measuring the change in reflectance of a device surface in response to a temperature change induced by device biasing. Purchase of a Thermoreflectance Device Imaging system is desired for thermal analysis of semiconductor devices with ultrahigh spatial resolution (sub-micron) and temporal resolution (50 ns) for identification of localized heat generation, quantification of peak temperature rise for lifetime estimation, design and evaluation of device-level thermal management, calibration of electrothermal device models, and improvement of device reliability.

The thermoreflectance device imaging system shall include the following capabilities:

• Non-destructive, non-invasive, optical-based thermal imaging of semiconductor devices

• Steady-state measurement mode with ultra-high spatial resolution down to 250 nm for detailed thermal mapping

• Transient measurement mode for nanosecond-scale thermal analysis with temporal resolution of

≤ 50 ns for ultrafast thermal imaging

• Thermal sensitivity of 10 mK

• Advanced data analysis module for multi-spectral thermoreflectance analysis with sub-pixel digital alignment, display and export of transient video captures, display and export of 3-D visualization, and additional direct file output capabilities (MATLAB) for custom processing

• 8 megapixel (2848 x 2848 pixels) for 200-1000 nm spectral range with a pixel resolution of 27 nm/pixel when using 100X objective

• External trigger for synchronization of external electronics biasing and LED pulsing for lock-in amplification for minimization of signal-to-noise ratio

• Measurement using 265 nm wavelength for deep UV thermal imaging of devices based on ultrawide bandgap semiconductors such as gallium oxide and aluminum gallium nitride

• Measurement using 365 nm wavelength for near UV thermal imaging of devices based on wide bandgap semiconductors such as gallium nitride

• Measurement using 470 nm wavelength for visible thermal imaging of devices with Au-based metallization

• Measurement using 530 nm wavelength for visible thermal imaging of devices with Au-based metallization

• Measurement using 780 nm wavelength for visible thermal imaging of devices with Al-based metallization

• Deep UV objective enabling unprecedented imaging of ultrawide bandgap semiconductor devices with illumination wavelengths in the 200-300 nm range

• Near UV and visible objectives with 280 and 390 nm spatial resolutions for near-universal imaging of nano-/microelectronics technologies

• Piezoelectric stage with auto-positioning and auto-focusing capabilities for precise alignment between “hot” and “cold” images for enhanced data acquisition

• Measurement capability of an intact 50 mm diameter working area

• Control of thermal stage temperature from 20 to 120 °C to analyze temperature dependent device thermal performance

• Thermoelectric heater/cooler and custom surface thermocouple for multi-temperature sample calibration

• Vibration isolation table (30x36 inches) to minimize measurement noise

• Silicon reference thermal test sample PCB embedded chip for system performance validation and calibration

• Custom probe station with 100 mm adjustable chuck and 6 custom DC micro-positioners for ultralow clearance probing of semiconductor devices underneath high magnification objectives

• All necessary control and analysis software

• On-site installation and training

• Minimum 12-month warranty on parts and technical support