Specifications_for_Optical_Sciences_ICP-RIE.pdf

Specifications for Optical Sciences ICP-RIE Tool

Section 1. General Requirements

1. Scope: This specification describes the minimum technical requirements and the minimum acceptable performance standards for an inductively coupled plasma reactive ion etching (ICP‐RIE) Tool to be installed by the Vendor in building 216 at the Naval Research Laboratory (NRL), Washington, DC.

The ICP‐RIE Tool must provide ease of operation and safety to its users.

2. Installation Site: The Vendor shall install the Tool at NRL, Washington DC 20375, in building 216 at a specific location to be designated by the Contracting Officer's Representative (COR).

3. Description and Primary Tool Components: The Tool must be capable of dry etching a wide variety of materials including chalcogenide and silicate glasses. The Tool must meet the specifications as indicated in the process specifications section of this document. It must be computer controlled via menu‐driven software and be user friendly.

Section 2. Basic Tool Requirements

1. Housing for all electronic sub systems, control units, pneumatics, and turbo-molecular pump.

2. Operating system providing a Windows10‐based environment for operator interface of process control, wafer handling, real time data logging of process parameters, machine status and recipe management.

System must provide a user logon/password control entry.

3. Process chamber which must be equipped as follows:

High conductance pumping port (ISO200).

Two KF25 ports for vacuum gauge and rough pumping of chamber.

A viewport with a KF40 fitting.

A KF40 fitting for installation of an optical emission spectroscopy (OES) end-point detection system.

4. Tool must have an aluminum lower electrode made with a diameter of 240 mm and be compatible with wafers or carrier plates up to 200mm diameter and have helium backside cooling

5. The lower electrode must be capable of being cryo (LN2) cooled and resistively heated (temperature range ‐150 °C to +400 °C).

6. The electrode may have a fixed height but must be capable of processing samples at least 10 mm in thickness. For thick samples, loading through the main chamber rather than the load lock is acceptable.

7. Tool must have a remote high‐density plasma source of at least a 180mm inside diameter with the following features:

Maximum output of no less than 3kW RF power @2MHz Automatic matching unit that is close‐coupled to the source. The source is to use electrostatic shield to produce a purely inductive plasma.

8. Substrate bias to be provided by an independent 600W RF generator @13.56MHz connected to the lower electrode through a close‐coupled automatic matching unit

9. A 100 mT, temperature‐stabilized capacitance manometer with isolation valve must be provided for process control. In addition, a gauge is to be provided for chamber base pressure measurement.

10. The ISO200 pumping port is to be fitted with a VAT series brand integrated controller (or equivalent) variable gate valve for chamber isolation and automatic process pressure control.

11. An electrical heating jacket must be provided for the pump‐down pipe to reduce condensation of process effluents.

12. Tool must have a stainless steel gas pod with a minimum capacity of 8 mass‐flow‐controlled process gas lines, each of which must be fitted with control pneumatics and circuitry. At least 6 of these gas lines must be equipped with mass flow controllers.

13. Tool must include load lock chamber for vacuum loading of a single wafer into the process chamber.

The load lock is to be provided with its own turbo and roughing pump.

14. The Tool must include a pump system for process and base‐pressure pumping to be accomplished by:

Corrosive compatible turbo‐molecular pump. Pfeiffer ATH1600MT or equivalent.

Backing pump is a 110 m3/hr roughing pump. Pfeiffer A124H or equivalent.

15. A laser end point detection system that uses a 905 nm wavelength laser. The output must be integrated with system control software and be capable of measuring, in real time, etch depth and etch rate. This system must include a camera for positioning.

Section 3. Minimum process specifications:

1. The following etch processes shall be confirmed, using 100mm diameter substrates ≤1mm thick, before acceptance:

Process 1 2

Material As2S3 Fused silica Etch gases CHF3-Ar C4F8-O2 Etch depth [μm] 2μm 0.5μm Etch rate [nm/min] >200 >200 Uniformity < ±5% < ±5% Selectivity >5:1 (AZ5214E) >1:1 (AZ5214E) Profile >85° >85° Sidewall roughness Smooth Smooth Run-to-run <±3% <±3%

Section 4. Training

1. Vendor will provide Tool hardware familiarization. This training can occur concurrently with tool commissioning.

2. Vendor will provide process training concurrent with process acceptance.

Section 5. Warranty

1. Vendor shall provide a twelve (12) month warranty from the date of installation acceptance at the NRL site, including all parts and labor and telephone response during normal business hours with 3 day or less on site response to breakdowns.

Section 6. Documentation

1. Vendor shall provide electronic copies of the following:

Full operating instructions suitable for use in teaching new users.

Nitrogen, water, air and vacuum schematics.

Electrical wiring schematics.

Complete mechanical schematics suitable to guide future modifications and repairs.

Trouble shooting manual for common servicing and repairs of electrical, mechanical and computer software problems.