Specifications_for_III-V_etcher.pdf

Specifications for NRL Nanoscience Institute Chlorine ICP RIE Tool – 11/16/2017

Section 1. General Requirements

1.1 Scope. ‐ This specification describes the minimum technical requirements and the minimum acceptable performance standards for a Chlorine Inductively Coupled Plasma Reactive Ion Etching (Cl2

ICP ‐ RIE) Tool to be installed by the Vendor in building 250 at the Naval Research Laboratory (NRL), Washington, DC. The Cl2 ICP ‐ RIE Tool will be placed in a multiple user facility and must provide ease of operation and safety to those in the facility. Vendor will take old III‐V etcher in trade.

1.2 Installation Site. ‐ The Vendor shall install the Tool, at Naval Research Laboratory, Washington

DC 20375, in building 250 NSI clean room at a specific location to be designated by the Contracting

Officer's Representative (COR). The Vendor shall install the Tool in a manner consistent with typical clean‐room operating procedures.

1.3 Description and Primary Tool Components. ‐ The Tool must be capable of dry etching a wide variety of materials including GaN, GaSb, InSb, AlGaN, InGaAs/InAlAs, InP, InAs, AlN, Al, and

AlAs/AlGaAs. The Tool must meet the specifications as indicated in the process specifications section of this document. The Tool is to be installed within a Class 100 clean room. It is intended for use by multiple users within that site. Therefore, it must be computer controlled via menu‐driven software and be user friendly.

Section 2. Basic Tool Requirements

2.1 Base console housing the electronic sub systems, control units, pneumatics, and turbo‐ molecular pump.

2.2 Operating system providing a Windows10™‐based environment for operator interface of process control, wafer handling, real time data logging of process parameters, machine status and recipe management. System must provide a user logon / password control entry.

2.3 ICP process chamber which must be equipped as follows:

High conductance pumping port (ISO200).

Electric resistive heating for heating process chamber walls to reduce condensation of process effluents.

View port and end‐point‐detection ports for optical emission and laser interferometer.

Two KF25 ports for vacuum gauge and rough pumping of chamber.

2.4 Tool must have an aluminum lower electrode made with a diameter of 240 mm. It must be capable of being cryo (LN2) cooled and resistively heated (temperature range ‐150oC to +400oC).

2.5 The electrode must have mechanical wafer clamping for wafers up to 6” and helium backside cooling.

2.6 Tool must have a remote high‐density plasma source of at least a 180mm inside diameter with the following features:

a maximum output of no less than 3kW RF power @13.56MHz an automatic matching unit that is close‐coupled to the source. The source is to use an electrostatic shield to produce a purely inductive plasma.

2.7 Substrate bias to be provided by an independent 600W RF generator connected to the lower electrode through a close‐coupled automatic matching unit

2.8 A 100‐millitorr (mT), temperature‐stabilized capacitance manometer with isolation valve must be provided for process control. An active penning gauge is to be provided for chamber base pressure measurement.

2.9 The ISO200 pumping port is to be fitted with a VAT series brand integrated controller or equivalent variable gate valve for chamber isolation and automatic process pressure control.

2.10 An electrical heating jacket must be provided for the pump‐down pipe to reduce condensation of process effluents.

2.11 Tool must have a stainless steel gas pod with a minimum capacity of 12 mass‐flow‐controlled process gas lines, four of which must be capable of handling toxic gases. All corrosive process gas lines must be double walled and use metal‐sealed mass flow controllers (MFC’s). All non‐ corrosive gas lines must use elastomer sealed MFC’s. Each line must be provided with an MFC for the accurate control of gas flows.

2.12 Tool must include load lock chamber for vacuum loading of a single wafer into the process chamber. The load lock is to be provided with its own turbo and roughing pump.

2.13 Process and base‐pressure pumping must be accomplished by:

Corrosive compatible Turbo‐molecular pump. Edwards STPA1603CV or equivalent.

Backing pump is a 100 m3/hr. roughing pump. Edwards IGX100M or equivalent.

Section 3. Minimum process specifications:

Material Mask Etch Depth Deisred Etch rate Feature Size

Sidewall smoothness Remark

GaAs PR 10‐30nm 1‐5nm/s 50nm Shallow etch with smooth surface

GaAs PR 100‐500nm 10nm/m 200nm critical

GaAs PR 1um 100nm/m 1um

InP PR 100‐500nm 100nm/m critical

InP SiO2 or SiN 10‐100um >1000nm/m

InP SiO2 or SiN thru wafer (500um) 5‐10um/m >10um

GaO SiO2 or SiN 100‐500nm 10‐20nm/m 1‐2um

SiO2 or SiN 1‐5um 1000‐ 2000nm/m >10um

GaN PR,SiO2 or SiN 100‐200nm 10nm/m 100nm Low Damage

AlGaN PR,SiO2 or SiN 1‐5um critical Smooth side wall is critical

AlN PR 100nm Low Damage

AlN SiO2 or SiN thru wafer (500um) 5‐10um/m >10um Via Hole

Section 6. Options

6.1 Extended Maintenance. Vendor shall provide an option for three‐year extended maintenance beyond the warranty period.

Section 7. Training

7.1 Vendor will provide 1 day of Tool hardware familiarization. Can be done concurrently during

Tool commissioning.

7.2 Vendor will provide process training concurrent with process acceptance.

Section 8. Warranty

8.1 Vendor shall provide a twelve (12) month warranty from the date of installation acceptance at the NRL site, including all parts and labor and telephone response during normal business hours with 3 day or less on site response to breakdowns.

Section 9. Documentation

9.1 Vendor shall provide electronic copies of the following:

a) Full operating instructions suitable for use in teaching new users.

b) Nitrogen, water, air and vacuum schematics.

c) Electrical wiring schematics.

d) Complete mechanical schematics suitable to guide future modifications and repairs.

e) Trouble shooting manual for common servicing and repairs of electrical, mechanical and computer software problems.