Grinder and CMP Tool Specifications_Attachment 1.pdf
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- Attached to
- Wafer Grinder and CMP Tools Federal contract opportunity
- Solicitation number
- N0017325QMB04
About this file
This document is a detailed technical specification sheet for wafer grinding and chemical mechanical polishing (CMP) tools required by Code 6880 of the Department of the Navy. The specifications call for commercially available tools consisting of a grinding system and CMP capable of removing up to 345 µm of semiconductor substrates from bonded or unbonded wafers, supporting wafer diameters between 75-150 mm.
The key technical requirements include: ability to grind and polish SiC wafers with total thickness variation (TTV) of <1 µm for single wafers and bow <20 µm; demonstration capability for processing SiC/SiO2/Si and SiC/SiO2/SiC bonded wafer stacks; surface roughness specifications of <50 nm for grinding and <5 Å for CMP; capacity to remove 345 µm of SiC material through grinding and up to 3 µm in a single CMP run; and advanced features including force-sensitive infeed mechanics, air bearings, pressure balancing, programmable pad conditioning, and a multi-stage filtration system. The contractor must provide on-site installation, training, and a minimum 12-month warranty covering parts and labor. Both new and refurbished hardware will be considered by the government.
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Other files for this federal contract opportunity
| File | Type | Posted |
|---|---|---|
| CSS N0017325RMB0401_wafergrinder.pdf | ||
| CSS N0017325RMB04_wafergrinder.pdf |
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N0017325QMB04 Attachment #1 Specificatons
Wafer Grinder and Chemical Mechanical Polisher (CMP) Tool Specifications
Description: Code 6880 requires commercially available tools that consist of a grinding system and chemical mechanical polisher (CMP) to remove up to 345 µm of semiconductor substrates from bonded or unbonded wafers. Both systems must support wafer diameters between 75 mm and 150 mm. The grinder must have the capability to apply differential pressure across the substrate to achieve very low total thickness variation (TTV). Automatic process grinding is needed between the coarse and fine wafer grinding. Feedback controls are required to measure the thickness of samples. The CMP process must provide consistent and reproducible results from wafer-to-wafer and batch-to-batch. There must be low surface roughness (< 5 Å ) after the polishing process for all materials.
Specific Requirements:
• The tools shall have demonstrated the ability to grind and polish SiC wafers with TTV of <1 µm for single wafers
• The contractor shall have demonstrated the ability to grind and polish SiC wafers with a bow <
20 µm
• The contractor shall provide demonstrations of grinding and polishing of 5 SiC/SiO2/Si bonded wafer stacks and 5 SiC/SiO2/SiC bonded wafer stacks
• Coarse and fine grinding must have a surface roughness of < 50 nm.
• Grinding system and processes must leave no edge chips when reduce wafer thickness by 50 µm
• The grinder may have manual loading fixtures
• Ex-situ digital measurements are required to provide consistent wafer-to-wafer thicknesses
• The tool shall have force-sensitive infeed mechanics to reduce sub-surface damage during grinding
• Air bearings and submicron feed rates are required to improve surface finish during grinding
• The tools shall be capable of handling 75 mm, 100 mm and 150 mm diameter wafers
• The surface roughness after CMP must be < 5 Å
• The grinding tool shall be able to remove at least 345 µm of SiC material
• CMP of SiC shall be capable of removing up to 3 µm in a single run
• The CMP tool must have pressure balancing to ensure uniform polishing
• The CMP system shall have a spraying feature to clean slurry from polishing pad
• The CMP shall have a slurry delivery system
• There shall be a vacuum system to transfer wafers
• The CMP system shall have programmable pad conditioning to produce consistent removal rates and improved uniformity
• A multi-stage filtration system shall filter particles up to 0.1 µm in the wastewater from the grinding tool at flow rates up to 12 gpm
• The contractor shall provide on-site installation and training
• The contractor shall provide a warranty on all systems (including parts and labor) for at least 12 months
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