Drawings.pdf

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78 1

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DWN

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DWG TYPE:

DESCRIPTION DWN CHKR APVDDATE

D

C

DRAWING NUMBER REVISION NUMBER

DO NOT SCALE DRAWING

THE DRAWINGS, SPECIFICATIONS AND OTHER DATA HEREIN PROVIDED SHALL

NOT BE COPIED, PUBLISHED OR OTHERWISE FURTHER DISSEMINATED WITHOUT

PRIOR WRITTEN PERMISSION OF STANFORD UNIVERSITY/SLAC

SLAC FORMAT V3.4

BREAK EDGES 0.13 - 0.4

UNLESS OTHERWISE SPECIFIED DIMENSIONS ARE IN MILLIMETERS

INTERNAL CORNERS R 0.4 MAX

TOLERANCES:

ALL SURFANGLE ±

ASME Y14.5-2009

DIMENSIONING AND TOLERANCING IS IAW

NEXT ASSEMBLIES:

GENERAL TOLERANCES ± 0.1 ± 0.2 ± 0.3 ± 0.5 ± 0.8 ± 1.2 ± 2

DIMENSIONS < 6 > 6 > 30 > 120 > 315 > 1000 > 2000

ESTIMATED MASS:

CAD FILE NAME:

NOTES: UNLESS OTHERWISE SPECIFIED

1 MATERIAL: SINGLE CRYSTAL SILICONE: FLOAT ZONE GROWN,

ZERO DEFECT, RESISTIVITY >1000 ohm-cm,VERIIED STRAIN FREE.

2. ORIENT CRYSTALS AS SPECIFIED BY TAB NUMBER THE DIFFRACTING

SURFACE SHALL BE OROENTED u 0.05v.

3 CLEARLY MARK THE END OF THE CRYSTAL (ENGRAVE PRIOR TO

ETCHING AND POLISHING) WITH THE ORIENTATION OF THE CRYSTAL

AS SPECIFIED BY THE NUMBER TAB AND SERIAL NUMBER.

4. CHAMFER ALL SHARP EDGES 0.2mm X 0.2mm. ETCH CRYSTAL TO

REMOVE DAMAGE PRIOR TO FINAL DIFFRACTION SURFACE PREPARATION.

5. DIFFRACTION SURFACE IS CENTRAL 53 mm BY 10 mm AREA OF EACH

CRYSTAL DIFFRACTION FACE. DIFFRACTION SURFACE TO BE LAPPED,

POLISHED AND ETCHED TO PROVIDE AN 8KeV ROCKING CURVE FULL WIDTH AT HALF MAXIMUM WITHIN 1 urad OF THEORETICAL VALUE DIFFRACTION SURFACE ROUGHNESS < 1nm RM S FOR WAVELENGTHS 5-1000nm.

DIFFRACTION SURFACE FLATNESS < 15 um. NO VISIBLE CUTS OF DIGS

WITHIN CLEAR APERATURE WITH OBLIQUE LIGHT ILLUMINATION

10 ±0.02

34 ±0.258 ±0.2

62X

462X

242X 582X

51 ±0.2

55 ±0.2

O5.54X THRU

35 ±0.22X

102X

A

106 ±0.2

B

C r 0.

VACUUM LEVEL 2

SPECIFICATION

SLAC-I-030-714-001-05

APPLIES

n 0.01 A i 0.10 B n 0.1 A n 0.1 A

2:1

1.6

H.WANG

I. KRAVTSOV 20221007

H.WANG

H.WANG;

PART

TXI MONOCHROMATOR

CRYSTAL, (111), TXI DCCM

DSG-000051716

DSG-00005171600

10.5 l O0.20M A B C

TAB CRYSTAL ORIENTATION ASYMMETRIC. CUT LABEL

1 Si (111) NO 111

PART0.902 kg PART

DSG-000051716.dft

REV

APPROVALS

D

B

C

D

78 1

ENGR

DWN

CHKR

DATE

A

SCALE:

B

A

O F

S

HD

DWG TYPE:

DESCRIPTION DWN CHKR APVDDATE

D

C

DRAWING NUMBER REVISION NUMBER

DO NOT SCALE DRAWING

THE DRAWINGS, SPECIFICATIONS AND OTHER DATA HEREIN PROVIDED SHALL

NOT BE COPIED, PUBLISHED OR OTHERWISE FURTHER DISSEMINATED WITHOUT

PRIOR WRITTEN PERMISSION OF STANFORD UNIVERSITY/SLAC

SLAC FORMAT V3.4

BREAK EDGES 0.13 - 0.4

UNLESS OTHERWISE SPECIFIED DIMENSIONS ARE IN MILLIMETERS

INTERNAL CORNERS R 0.4 MAX

TOLERANCES:

ALL SURFANGLE ±

ASME Y14.5-2009

DIMENSIONING AND TOLERANCING IS IAW

NEXT ASSEMBLIES:

GENERAL TOLERANCES ± 0.1 ± 0.2 ± 0.3 ± 0.5 ± 0.8 ± 1.2 ± 2

DIMENSIONS < 6 > 6 > 30 > 120 > 315 > 1000 > 2000

ESTIMATED MASS:

CAD FILE NAME:

NOTES: UNLESS OTHERWISE SPECIFIED

1 MATERIAL: SINGLE CRYSTAL SILICONE: FLOAT ZONE GROWN,

ZERO DEFECT, RESISTIVITY >1000 ohm-cm,VERIIED STRAIN FREE.

2. ORIENT CRYSTALS AS SPECIFIED BY TAB NUMBER THE DIFFRACTING

SURFACE NORMAL SHALL BE OROENTED u 0.05v RESPECTIVELY FOR THE Si(220), Si(111) ORIENTATIONS.

3 CLEARLY MARK THE END OF THE CRYSTAL (ENGRAVE PRIOR TO

ETCHING AND POLISHING) WITH THE ORIENTATION OF THE CRYSTAL

AS SPECIFIED BY THE NUMBER TAB AND SERIAL NUMBER.

4. CHAMFER ALL SHARP EDGES 0.20mm X 0.20mm. ETCH CRYSTAL TO

REMOVE DAMAGE PRIOR TO FINAL DIFFRACTION SURFACE PREPARATION.

5. DIFFRACTION SURFACE IS CENTRAL 53 mm BY 10 mm AREA OF EACH

CRYSTAL DIFFRACTION FACE. DIFFRACTION SURFACE TO BE LAPPED,

POLISHED AND ETCHED TO PROVIDE AN 8KeV ROCKING CURVE FULL WIDTH AT HALF MAXIMUM WITHIN 1 urad OF THEORETICAL VALUE DIFFRACTION SURFACE ROUGHNESS < 1nm RM S FOR WAVELENGTHS 5-1000nm.

DIFFRACTION SURFACE FLATNESS < 15 um. DIFFRACTION SURFACE SCRATCHES LARGER THAN 5 um WIDE AND 5 mm LONG NOT TO EXCEED

ONE PER CM^2 DENSITY. DIFFRACTION SURFACE DIGS OR PITCH LARGER

THAN 25 um DIAMETER NOT TO EXCEED ONE PER CM^2 DENSITY

10 ±0.02

62X

462X

51 ±0.2

55 ±0.2

34 ±0.258 ±0.2

242X 582X

106 ±0.2

O5.54X THRU 35 ±0.22X

102X l O0.2M A B C n 0.01 A i 0.10 B

A

C r 0.

n 0.1 A n 0.1 A B

VACUUM LEVEL 2

SPECIFICATION

SLAC-I-030-714-001-05

APPLIES

2:1

1.6

H.WANG

I. KRAVTSOV 20221007

H.WANG

H.WANG;

PART

TXI MONOCHROMATOR

CRYSTAL CHANNEL-CUT

DSG-000051718

DSG-00005171800

10.5

TAB CRYSTAL ORIENTATION ASYMMETRIC. CUT LABEL

2 Si (111) NO 1113

0.271 kg PART

DSG-000051718.dft

B