Attachment 1 - Statement of Work - IBD system REVISED FY23 .pdf
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- Solicitation number
- 1333ND23QNB680459
About this file
This statement of work outlines technical specifications for an ion beam etch and ion beam deposition system to be installed at the National Institute of Standards and Technology Boulder Microfabrication Facility. The system must be able to etch and deposit materials including germanium, magnesium fluoride, tantalum pentoxide, silicon nitride, gold, copper, tantalum, silicon, and aluminum on substrates up to 150mm wafers. Key requirements include a base pressure below 1x10^-7 Torr, independent control of process gases and chamber pressure, secondary ion mass spectrometry endpoint detection, etch and deposition uniformity of 2% and 1.5% respectively. The solicitation seeks delivery, installation, training and a one-year warranty for the system to be placed at NIST Boulder by the selected vendor.
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| File | Type | Posted |
|---|---|---|
| Attachment 2 - Small Business Subcontracting Plan (1).pdf | ||
| RFQ 1333ND23QNB680459 - IBD-IBE System.pdf |
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Statement of Work BMF IBE/IBD System
1. Background Information:
NIST-Boulder has a state-of-the-art research laboratory (the Katharine Blodgett Gebbie Building) to support the most sensitive research done at NIST. Included in this building is a Class 100 microelectronics fabrication facility, called the Boulder Micro-fabrication Facility (BMF). The BMF requires an Ion Beam Etch and Ion Beam Deposition (IBE/IBD) system in order to fabricate its next generation devices.
2. Scope of Work:
The goal of this contract is to supply, install, and train new users on an IBE/IBD system that meets the needs of the BMF community.
3. General System Specifications
The IBE/IBD system shall:
1. Be constructed with materials that are compatible for use in an ISO Class 5 cleanroom.
2. Be designed for normal operation at an altitude of 5,500 feet above sea level.
3. Be constructed such that any surface which comes in contact with a process chemical shall be constructed of material which is resistant to that chemical.
4. Be able to perform ion beam etching and ion beam deposition of materials according to industry standards used in the semiconductor industry.
5. Consist of all new items. Prototypes, one-off systems, demonstration models, used or refurbished instruments will not be considered for award.
6. Include all computer systems, power supplies, and all ancillary equipment required for the system to operate.
7. Include appropriate interlocks to ensure that the tool is safely operated. The system shall meet all SEMI S2 and/or CE safety standards.
8. Be compatible with NFPA 318 installation standards.
9. During transport to final location, the system components shall be able to pass through a freight elevator with doors that are 7 feet 11 inches tall and 8 feet wide, the platform has an entrance door to back length of 9 feet and a width of 13 feet, a cab height of 7 feet 11 inches, and has a weight limit of 10,000 pounds.
General:
1. The system shall be able to operate in a semi-automated, computer-controlled manner:
a. Specifically, the system shall be able to :
i. Have a user manually load a substrate into a load lock.
ii. Vacuum pump out the load lock.
iii. Transfer the substrate into a process chamber.
iv. Perform a preprogrammed recipe on the substrate in the process chamber including, but not limited to etching the substrate and depositing films on the substrate.
a. Specifically, Be able to etch a substrate and then deposit a film on the same substrate without breaking vacuum.
v. Monitor the conditions of the recipe including an endpoint that is controlled by software.
vi. When processing is completed, transfer the wafer back into the load lock.
vii. Allow the user to vent the load lock, retrieve their substrate, and pump down the load lock.
Footprint:
1. The system shall be able be placed in the blue space shown in attachment 1. As shown in the attachment, the space is comprised of two rectangles. The first is 5.9 ft deep by 5.75 ft wide by 8 ft high. The second space is 4.5 ft deep and 6.75 ft wide by 8 ft high. The two rectangles are conjoined and are adjacent to a wall that separates the cleanroom bay from the cleanroom chase. The tool interface and control electronics required for the tool to operate must be able to fit in this volume. There is an additional volume for egress and room for door swings as the green space shown in attachment 1. The tool may intrude into the green area only when being serviced. Any ancillary equipment such as pumps, chillers, heat exchangers, and support equipment must be able to be placed in the chase behind the tool in a volume that is 30 inches deep by 14.5 feet wide by 8 feet tall, as shown in the orange space in attachment 1. The tool on the clean side may penetrate the wall between the cleanroom and chase as appropriate. Please see attachment 1 for more details.
2. When placed in the space described in attachment 1, the system shall be serviceable without moving position: Modifications to cleanroom walls necessary for making accessible tool panels, fittings, and openings must be noted.
3. The system can penetrate the wall and use the ancillary equipment area, but this cannot impact normal serviceability. Wall penetrations must conform reasonably closely to the tool to preserve cleanroom bay airflow.
4. The system shall be able to be accessed primarily from Cleanroom Bay side for normal operations including but not limited to: sample loading/unloading, defining and running recipes, monitoring etch, and deposition processes.
Footprint Diagram:
User Interface:
1. The system shall be controlled by software that is able to control all aspects of the tool. This software must also provide users a Graphical User Interface (GUI) that:
shows users the state of the tool, allows users to change the state of the tool, allows users to create and store recipes, and allows users to run recipes to automatically run process on the tool. The control software shall also have the following capabilities:
a. Be capable of data logging of all monitored process parameters.
b. Be able to operate within a secure network domain.
c. Be equipped with a Microsoft Windows 10 or newer operating system.
d. Have an integrated recipe editor for developing and modifying recipes.
e. Have recipes that shall allow setting of etching and deposition parameters including but not limited to times, voltages, powers, and pressures.
f. The system must be able to operate according to one recipe that can control all of the modules simultaneously.
g. The system shall be able to store and edit recipes to control the system using only software that is integrated into the system, no other software or hardware is to be required.
h. The system shall be able to meet all requirements while not being connected to the internet or a network. It shall be able to function as a stand-alone unit.
Vacuum Chambers:
1. Consist of a system with a process chamber and a load lock. The system shall:
a. Include a substrate handling system that can accommodate substrates up to a substrate with lateral dimensions of a 150 mm SEMI spec wafer and one SEMI-standard flat at the bottom.
b. The system shall be able to process substrates that are smaller than a 150 mm SEMI spec wafer and one SEMI-standard flat at the bottom.
c. Specifically, the system shall be able to accommodate and process a substrate with lateral dimensions of a 3 inch SEMI spec wafer and one SEMI-standard flat at the bottom.
d. Switching between 3 inch and 150 mm substrate sizes shall require no longer than 5 minutes of time, only require simple tools, and not require venting of the process chamber.
e. Have an automated vacuum load lock to transport wafers in and out of the process chamber such that the chamber does not need to be vented between process runs.
Load Lock:
1. Contain a load lock system that shall:
a. Achieve a base pressure of less than 5 x 10-7 Torr in less than 1 hour.
b. Have a vacuum system containing a dedicated, oil-free, dry pump. To meet the BMF standardized vacuum pump criteria, the process chamber vacuum system shall be compatible with a dry Ebara model EV-A03 or EV- A06 pump as appropriate. The contractor shall provide this new pump as an option in the bid where the Government can either purchase this pump as an option or provide their own pump.
i. This load lock vacuum system shall be able to be pumped independently from the process chamber vacuum system.
c. Achieve a high vacuum using a dedicated turbomolecular or turbomolecular/drag pump.
d. Consist of a single substrate handling system.
Process Chamber
1. Include a process chamber that shall:
a. Achieve a base pressure of less than 1 x 10-7 Torr in 24 hours or less.
b. Be equipped with a controller for independent control of process gas flow and chamber pressure.
c. Include all appropriate gauges to measure pressure, from atmosphere to chamber base pressure, inside the chamber.
d. Include a rough vacuum provided using an oil-free, dry pump. To meet the BMF standardized vacuum pump criteria, the process chamber vacuum system shall be compatible with a dry Ebara model EV-A03 or EV- A06 or an Edwards iH 80 pump as appropriate. The contractor shall provide this new pump as an option in the bid where the Government can either purchase this pump as an option or provide their own pump.
e. Achieve a high vacuum using a dedicated turbomolecular or turbomolecular/drag pump.
f. Preference will be given to systems equipped with a heater or heaters to heat the chamber walls to drive off absorbed water.
g. Include an optical window that allows an operator to see the inside of the chamber.
h. Include liners and shields for easy chamber cleaning.
2. Be able to process substrates:
a. On a stage that:
i. Can process substrates with lateral dimensions of a 150 mm SEMI spec wafer and one SEMI-standard flat at the bottom or smaller sized substrates.
ii. Is able to rotate from at least 0 to 30 RPM, around an axis parallel to the substrate normal.
iii. Is able to tilt from 0 degrees to at least 80 degrees from the beam where 0 degrees is defined as the substrate being normal to the etch beam.
iv. Is able to be positioned such that the substrate is perpendicular to the deposition beam.
v. Includes appropriate shields and shutters.
vi. Is cooled during the etch and deposition process
a. The cooling shall work equally well for substrates with a lateral dimensions of a 150 mm SEMI spec wafer and one SEMI-standard flat at the bottom and a 3 inch SEMI spec wafer and one SEMI-standard flat at the bottom.
b. Preference will be given to systems that can keep the sample at temperatures less than 75 C during a typical etch process.
b. The contractor shall provide drawings for the stage such that the
Government can make custom clamps/holders to accommodate their substrates.
3. The system shall be able to etch samples in the process chamber using the etch ion source. Specifically, the system shall:
a. Be able to etch a sample with inert gasses including but not limited to argon.
b. Include expandable gas handling to include reactive gas etching included but not limited to Reactive Ion Beam Etching (RIBE), Chemically Assisted Ion Beam Etching (CAIBE), and oxygen processes.
c. Include end point detection using a Secondary Ion Mass Spectrometry (SIMS) system, or a demonstrated superior alternative, that has an endpoint sensitivity to sample etch areas of 3 cm2 or smaller.
i. Provide an etch uniformity of 2 % across a substrate with lateral dimensions of a 150 mm SEMI spec wafer and one SEMI-standard flat at the bottom minus a 5 mm edge exclusion zone around the edge of the wafer. Please note: Etch uniformity is defined as ½ * range/mean.
The requirement is 2 % uniformity or better, not +/- 2 % or better.
ii. The contractor shall supply a profile of etch rate versus radial position for a typical system at time of bid.
iii. Stronger Technical Consideration will be given for systems that can provide better etch uniformity across the substrate.
d. Include a dedicated ion etch source that shall:
i. Be located in the process chamber.
ii. Have an adjustable beam voltage in the range of at least 100 – 1000 V.
iii. Have an adjustable beam current to control etch rate.
iv. Be able to produce an etch current density in the range of at least 0 –
0.65 mA/cm2 at 1000 V at the sample.
v. Include an appropriate neutralizer system to avoid charging.
vi. Be able to be field serviceable. The filaments and the grids, if applicable, shall be able to be serviced in the field. Basic ion etch source cleaning and maintenance shall be possible to be completed in the field by trained Government staff. It shall not be required to have a field visit from the contractor to perform basic preventative maintenance.
4. The system shall be able to deposit samples in the process chamber using the deposition ion source. Specifically, the system shall:
a. Be able to deposit high quality, low stress, low loss dielectric stacks for general purpose electronic and optical applications consistent with industry standards used in the semiconductor industry.
b. Be able to deposit higher density, lower defect films using ion beam assisted deposition in applications consistent with industry standards used in the semiconductor industry.
c. Have a deposition beam that can be oriented perpendicular to the substrate plane. That is, films meeting the uniformity specification below shall be achievable with a deposition beam incident parallel to the substrate normal.
d. Be able to encapsulate etched wafers without breaking vacuum.
Specially, a substrate must be able to be etched and then have a film deposited on it without breaking vacuum.
e. Be able to deposit materials including but not limited to:
i. Germanium (Ge)
ii. Magnesium Fluoride (MgF2)
iii. Tantalum Pentoxide (Ta2O5)
iv. Silicon Nitride (SiNx)
v. Gold (Au)
vi. Copper (Cu)
vii. Tantalum (Ta)
viii. Silicon (Si)
ix. Aluminum (Al)
x. The ability to expand to methane-based diamond-like carbon deposition.
f. Have a carousel with a least three deposition sources.
i. Targets shall be enclosed and shuttered to avoid cross contamination during etches.
i. Provide a deposition uniformity of 1.5 % across a substrate with lateral dimensions of a 150 mm SEMI spec wafer and one SEMI-standard flat at the bottom minus a 5 mm edge exclusion zone around the edge of the wafer. Please Note: Deposition uniformity is defined as ½ * range/mean. The requirement is 1.5 % uniformity or better, not +/-
1.5 % or better.
ii. Stronger Technical Consideration will be given for systems that can provide a better deposition uniformity across the substrate.
g. Include a dedicated ion deposition source that shall:
i. Be located in the process chamber.
ii. Have an adjustable beam voltage in the range of at least 100 – 1000 V.
iii. Have an adjustable beam current to control etch rate.
iv. Include an appropriate neutralizer system to avoid charging.
v. Be able to be field serviceable. The filaments and the grids, if applicable, shall be able to be serviced in the field. Basic ion etch source cleaning and maintenance shall be possible to be completed in the field by trained Government staff. It shall not be required to have a field visit from the contractor to perform basic preventative maintenance.
5. Include easily replaceable shields and/or liners in the process chamber that can protect the process chamber and appropriate parts from cross-contamination of non-compatible processes. The system shall be delivered with a set of shields and/or liners in the system and an additional spare set that is packaged appropriately for storage until the spare set needs to be swapped with the set delivered in the system for cleaning.
Optional CLINS
1. Include the following items as options that may or may not be exercised by the Government at any point during the contract:
a. A high uptime spare kit parts that need for required maintenance.
b. An Ebara EV-A03 or EV-A06 load lock roughing pump
c. An Ebara EV-A03 or EV-A06 or Edwards iH 80 chamber roughing pump
Delivery and Install
a. The contractor shall be responsible for delivering the IBS/IBS system to its final location in the BMF. This is to include all required rigging from the delivery truck to final tool placement in the BMF. The installation and rigging shall be performed in a method that is compatible with the cleanliness requirements of ISO class 5 cleanroom and NIST structural requirements. Items entering the cleanroom shall be cleaned to standards outlined in ISO 14644. The system shall be double bagged in a manner consistent with the semiconductor industry to allow the system to be transferred from a dirty space to controlled ISO classified space.
The Government reserves the right to have the tool delivered to its final location in the BMF and will then be able to facilitize the system for a period between system delivery and site acceptance test. This time period shall be at least 1 month and will not exceed 1 year, and the actual time period will be agreed upon between the Government and the contractor. If facilitization occurs faster than the agreed upon time period, then the contractor may start the site acceptance test on a date that is mutually agreeable between the Government and the contractor.
b. During system installation, the contractor shall provide a working set of recipes as defined in section 2.c.ii along with any standard cleaning recipes.
c. The contractor shall schedule all visits to the BMF for US citizens or permanent residents with the TPOC at least 2 weeks before arriving at the site. The contractor shall schedule all visits to the BMF for non-US citizens or non-permanent residents with the TPOC at least 6 weeks before arriving at the site.
d. All staff from selected vendor shall be badged by NIST Security. No one may enter the site without a badge.
Training and Documentation:
a. After the system passes the site acceptance test, the contractor shall train users on the operation and maintenance of the system.
b. The contractor shall supply the initial installation manual, utility requirements, full system design schematics, and a diagram showing the tool footprint, measurements, and wall penetrations for the system at the time of award.
Warranty:
a. The contractor shall supply a one-year warranty on all non-consumable parts and labor.
Inspection and Acceptance:
a. Before shipping the system, the contractor shall provide the Government a standard factory acceptance report demonstrating that the IBE/IBD system performs according to the contractor’s standard factory acceptance test. The Government reserves the right to be present during the factory acceptance test. The contractor shall provide the Government with a schedule of the factory acceptance test at least 4 weeks prior to the test to ensure that the Government has enough time to arrange for travel to the factory. At this time, the contractor shall provide the Government with the final installation manual, utility requirements, full system design schematics, and a diagram showing the system footprint.
b. After system installation, the contractor shall demonstrate the system performs according to system specifications using a standard site acceptance test. The system must meet these conditions before it will be accepted.
Deliverables:
a. After award of contract, the contractor shall supply a schedule for when the required work will be performed. The contractor shall provide status updates to the Government on a mutually agreed upon time schedule.
b. The contractor shall provide the Government with a schedule of the factory acceptance test at least 4 weeks prior to the test to ensure that the Government has enough time to arrange for travel to the factory.
c. Before shipping the system, the contractor shall:
i. provide the Government a standard factory acceptance report demonstrating that the IBE/IBD system performs according to the contractor’s standard factory acceptance test.
ii. provide the Government with the final installation manual, utility requirements, full system design schematics, and a diagram showing the system footprint.
d. The contractor shall supply all parts, hardware, equipment, and labor required to perform the tasks listed.
e. Within one week of the completion of the work, the contractor shall provide the TPOC a report of the work done, the results of the acceptance test, and any issues identified.
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