Attachment 1 Statement of Objectives (SOO) ANGSTRM.pdf

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STATEMENT OF OBJECTIVES

(SOO)

07 December 2022

Space Electronic Technology (SET) Advanced Next Generation Strategic Rad Hard Memory

Advanced Next Generation Strategic Radiation hardened Memory (ANGSTRM)

Purpose and Background

Strategic Radiation Hardened (SRH) non-volatile memory (NVM) is currently employed within the Department of Defense (DoD) across numerous space and strategic systems. Ideally, the DoD would have access to NVMs with the performance and density of commercial state-of-the-art (SOTA) devices; however, the radiation and thermal environments where the DoD deploys systems prevents the use of commercial technologies. Furthermore, many of the DoD systems have requirements to use trusted, on-shore manufacturing of electronics. This has become challenging as many of the advanced semiconductor manufacturing capabilities exists within non-US foundries. Advancing SRH NVM technologies is critical to support the functionality and modernization of strategic missiles, missile defense and military space systems. The current state-of-the-practice (SOTP) SRH NVM technologies are limited in performance and density, so system designers require multiple (sometimes many) devices to meet on-board storage requirements. This approach drives up the size, weight, power and cost of the system storage solutions. In some cases, limited capability of SOTP technologies prevents programs from reaching desired capabilities.

The United States Space Force (USSF) is seeking to improve the density and performance of SRH NVMs for future space and strategic systems. This may be accomplished with a combination of radiation hardening techniques (e.g. RHBP/RHBD) applied to SOTA CMOS and memory technologies, along with advanced packaging techniques to scale density beyond the levels that could be achieved with a single chip. Proposals shall identify the innovative solutions to achieve government threshold and objective requirements for performance and reliability of advanced SRH NVM, while also considering the SWAP constraints of the space environment. Successful execution of this program will have broad impact and result in a qualified SRH NVM for use across a wide range of DoD space and strategic systems.

Scope and performance Objectives

Offerors shall address all areas called forth in the SOO.

The objective of this effort is to develop, produce and acquire a SRH NVM device with near-commercial SOTA performance. This could be accomplished by leveraging advanced packaging along with radiation hardening techniques applied to SOTA commercial technology nodes. A multi-phased development approach is needed to assess the scalability of these technologies while still meeting the radiation requirements for the space and strategic environments. The technology must be suitable to use in DoD systems requiring trusted on-shore fabrication. The SRH NVM shall be scalable and support the design of a family of Multi-Chip Modules (MCM) of different storage capacity. This approach will provide

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maximum flexibility to support a variety of mission needs. The offeror should have production capability and technical marketing infrastructure to support a space qualified standard product offering.

Approaches stating your capabilities, capacity, and skilled staffing, and are sought for development of SRH NVM technologies that meet a threshold requirement of 4 Gb monolithic device storage density, scalable up to a 32 Gb MCM. The device should be capable of QML (https://www.acquisition.gov/far/9.203)qualification and fabricated in a trusted on-shore facility. The NVM bit-cell and CMOS technologies shall be identified at the onset of the project, having taken into consideration on-shore fabrication facilities, availability of design tools, access to intellectual property, supplier sourcing, and potential to achieve radiation and performance objectives. The government threshold and objective requirements for radiation and device performance are provided in the table below. Additional strategic-level radiation requirements will be provided in a CUI appendix upon request to vendors cleared to access the information.

RH Memory Specifications

Threshold Objective Comment

NON-VOLATILE MEM SPEC

Electrical Performance

Monolithic Memory Density

4Gb 16Gb

MCM Density 32Gb 128Gb Endurance

(R/W cycles) 1E9 1E12 Post TID @ WC operating conditions

Retention (years) w/o refresh

10 15 Post TID @ WC operating conditions

Total operating power per memory device

(mW)

10 1

Total Standby power per memory device

(mW)

100 10

Operating Temperature Range

(degrees C)

-40 to 125 -55 to 125 MIL-T-1010 @ WC operating conditions

Reliability (full performance life time in years)

>=15 Cont. Bias >=30 @ 1% Duty

Cycle

>=20 Cont. Bias >=30 @ 1% Duty

Cycle

@ WC operating conditions

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RADIATION PERFORMANCE

Total Ionizing Dose (Krad(Si))

>300 >1000 MIL-T-1019

@ WC operating conditions

Single Event upset (SEU) (errors per bit day)

<1E-10 <1E-12 JESD57 or ASTM 1192 Solar Min+ WC Solar Flares (Oct ’89) @

WC operating conditions Single Event Functional

Interrupt (SEFI) (events per device day)

<1E-6 <1E-8 JESD57 or ASTM 1192 Solar Min+ WC Solar Flares (Oct ’89) @

WC operating conditions Single Event Latch-up

(SEL)

(MeV-cm2/mg)

>= 72 >=100 Heavy Ion @ WC operating conditions

Single Event Gate/Dielectric

Rupture (SEGR/SEDR) (MeV-cm2/mg)

>= 72 >=100 Heavy Ion @ WC operating conditions

The effort will develop a full-scale prototype device, provide device characterization and radiation test reports, and provide a qualification plan with a path to achieve a QML standard product offering. The offeror shall demonstrate the capability for marketing and product support.

Submissions shall address the design, layout, and fabrication of the full-scale device in a trusted on-shore facility. Additionally, the offeror shall provide a space qualification plan, discuss their SRH design approach, and identify long-term sourcing strategy for intellectual property.